Semiconductor devices fabrication

An important consideration in the sequence of semiconductor devices fabrication is the so-called thermal budget, a measure of both the CVD temperature and the time at that temperature for any given CVD operation. As a rule, the thermal budget becomes lower the farther away a given step is from the original surface of the silicon wafer. This restriction is the result of the temperature limitations of the already deposited materials. 

From a reaction engineering viewpoint, semiconductor device fabrication is a sequence of semibatch reactions interspersed with mass transfer steps such as polymer dissolution and physical vapor deposition (e.g., vacuum metallizing and sputtering). Similar sequences are used to manufacture still experimental devices known as NEMS (for nanoelectromechanical systems). 

Middleman, S. and A. K. Hochberg. Process Engineering Analysis in Semiconductor Device Fabrication. McGraw-Hill, New York, 1993. 

Middleman and Hochberg Process Engineering Analysis in Semiconductor Device Fabrication... 

Surface layers of silicon oxide are important in semiconductor device fabrication as interlayer dielectrics for capacitors, isolation of conducting layers, or as masking materials. However, anodic oxides, due to their relatively poor electrical properties, breakdown voltage, and leakage current, have not yet found much use in device technology, and cannot compete with thermal oxides obtained at high temperatures of 700 to 900 °C. 

A.2 Semiconductor Device Fabrication. In this section we investigate the gas-phase synthesis of compounds, primarily semiconductors, that are preferentially deposited on a surface to form a layer called a thin film. This technology can be used to form structural and protective layers of materials described in the previous section, but is used primarily to form thin films from semiconductor materials for electronic devices. Recall from Figure 6.99, for example, that most semiconductor devices are made from layers of appropriately doped compounds. In order to fabricate these devices at ever smaller scales, the layers must be formed in a carefully controlled manner. This... 

Certain semiconductor device fabrication methods require the formation of a single-crystal deposit of the semiconductor on an insulating substrate. In epitaxial methods, the semiconductor is deposited on a single-crystal piece of substrate chosen, in part, on the basis of the match of the lattice parameters, thermal expansion coefficients and chemical compatibihty of the substrate and deposit. Singlecrystal substrates include those of AI2O3, MgAl204, Q -quartz andZrSi04. ... 

The development of the neutron depth profiling technique has been motivated by the importance of boron in both optical and microelectronic materials. Boron is widely used as a p-type dopant in semiconductor device fabrication and in the insulating oxide barriers applied as an organometallic or in vapor phase deposition glasses. 

The objective of this chapter is to illustrate the use of microradiology with coherent x-rays [ 1 ] to investigate open problems in electrodeposition. Metal electrodeposition is an old and widely exploited technique, one of the most frequently used for protective and decorative coating [2], semiconductor device fabrication processes, and other industrial tasks [3,4],... 

From a reaction engineering viewpoint, semiconductor device fabrication is a sequence of semibatch reactions interspersed with mass transfer steps such as polymer... 

CHg group ceases, and a multibeam H pattern is observed. Measuring the temperature dependence of the beam pattern broadening into the volcano pattern allows one to measime the energy required to make the -CH group spin. Such information is of importance in many technologies dependent upon molecular motions on surfaces, such as semiconductor device fabrication, corrosion inhibition, and heterogeneous catalysis. 

One of the main advantages of DNQ/novolac resists over the bis-azide/rubber resist system that was responsible for the former superseding the latter is the fact that novolac does not swell during development and is therefore suitable for the printing of high-resolution patterns. Additionally, novolac resin is reasonably resistant to plasma, a very important property in semiconductor device fabrication. However, the thermal and mechanical properties of novolac are not outstanding its plastic flow temperature is around 120°C. Even here, the effects of isomer composition... 

Nonogaki, T. Ueno, and T. Ito, Microlithography Fundamentals in Semiconductor Devices Fabrication Technology, Chapter 5, Marcel Dekker, New York (1998). 

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