Resins, photosensitive

Liquid - solid Polymerisation by local UV exposure of a photosensitive resin Photosensitive resins Acrylates, epoxydes shrinkage and deformations model needs supports... 

Chem. Descrip. Ethyl phenyl ethanolamine CAS 92-50-2 EINECS/ELINCS 202-160-9 Uses Coupling agent for dyes for syn. fibers cure promoter for polyester resins photosensitive chemical for paper coatings intermediate for oil-sol. dyestuffs... 

Positive-Tone Photoresists based on Dissolution Inhibition by Diazonaphthoquinones. The intrinsic limitations of bis-azide—cycHzed mbber resist systems led the semiconductor industry to shift to a class of imaging materials based on diazonaphthoquinone (DNQ) photosensitizers. Both the chemistry and the imaging mechanism of these resists (Fig. 10) differ in fundamental ways from those described thus far (23). The DNQ acts as a dissolution inhibitor for the matrix resin, a low molecular weight condensation product of formaldehyde and cresol isomers known as novolac (24). The phenoHc stmcture renders the novolac polymer weakly acidic, and readily soluble in aqueous alkaline solutions. In admixture with an appropriate DNQ the polymer s dissolution rate is sharply decreased. Photolysis causes the DNQ to undergo a multistep reaction sequence, ultimately forming a base-soluble carboxyHc acid which does not inhibit film dissolution. Immersion of a pattemwise-exposed film of the resist in an aqueous solution of hydroxide ion leads to rapid dissolution of the exposed areas and only very slow dissolution of unexposed regions. In contrast with crosslinking resists, the film solubiHty is controUed by chemical and polarity differences rather than molecular size. 

PyrogaUol has been cited for use in photosensitive compositions. It is used in the form of sulfonate esters of quinonediazides which hydrolyze when exposed to actinic light to Hberate the acid which, in turn, catalyzes further reaction of novolak resins (60). 

Diethanolamine salts with fluoroalkanol phosphates are used for presensitized lithographic printing plates. The plate has a partially exposed photosensitive layer containing a polyurethane resin having acidic H-containing substituent and... 

Immobilization of (3-D-glucosidase from almonds on photo-crosslinkable resin prepolymer (ENTP-4000) was carried out by the following procedure. One gram of ENTP-4000 was mixed with 10 mg of a photosensitizer, benzoin ethyl ether, and 110 mg of (3-D-glucosidase from almonds (3.4 units mg ). The mixture was layered on a sheet of transparent polyester film (thickness, ca. 0.5 mm). The layer was covered with transparent thin film and then illuminated with chemical lamps (wavelength range 300 00 nm) for 3 min. The gel film thus obtained was cut into small pieces (0.5 x 5 x 5 mm) and used for bioconversion reaction. 

A photosensitive composition, consisting of an aromatic azide compound (4,4 -diazidodi-phenyl methane) and a resin matrix (poly (styrene-co-maleic acid half ester)), has been developed and evaluated as a negative deep UV resist for high resolution KrF excimer laser lithography. Solubility of this resist in aqueous alkaline developer decreases upon exposure to KrF excimer laser irradiation. The alkaline developer removes the unexposed areas of this resist. 

The photosensitive azide compound was 4,4 -diazidodiphenyl methane (m.p. 44.0 t). The poly(styrene-co-maleic acid half ester) was used as a resin matrix. 

A negative deep UV resist, consisting of a photosensitive 4,4 -diazidodiphenyl methane and a poly-(styrene-co-maleic acid half ester) resin, has been found to meet the requirements needed for KrF excimer laser lithography. 

Negative two-layer resist. A cresol novolac resin (Alnovol PN-430) was spin-coated on a silicon wafer and baked at 80V, for one minute on a hot plate. The silicon wafer was set on a spin-coater and a photosensitive solution consisting of D1 (3 wtlfc), PVP (5 wt%), acetic acid (46 wt%), and water (46 wt%) was... 

Persistent photosensitivity developed in eight men after occupational exposure to hot epoxy resin fiimes. The condition was limited to sites contacted by the resin. Small doses of ultraviolet-A light evoked abnormal reactions consisting of erythema, edema, and papules in the clinically involved skin. Positive photopatch tests were observed to epoxy resin in four subjects and to bisphenol A in all subjects. Another study showed that bisphenol A can be released during the thermal decomposition of epoxy resin in the temperature range of 250-350°C. Photosensitizing activity was explained by the formation of ftee radicals during exposure to ultraviolet-B radiation of bisphenol A vapor, to form a semiquinone derivative of bisphenol A ... 

Allen H, Kaidhey K Persistent photosensitivity following occupational exposure to epoxy resin. Arch Dermatol 115 1307, 1979... 

Nonhnear absorption is the key mechanism responsible for 3D structuring of materials, including photoresists and photosensitive resins. Optical nonhn-earities take place when intensity of the irradiating electrical approaches that of molecular couphng, which occurs at the levels of approximately 10 ° V/m or 100 GW/cm. Detailed description of optical properties of polymers can be foimd in the literature [8]. Among the optical nonhnearities, multipho-... 

Title Polybenzoxazole Precursor, Photosensitive Resin Composition Using the Same, and Manufacturing Method of Semiconductor Device... 

Three photosensitizers, P-1, P-2, and P-3, were used in polymerizing resins and are depicted below. 

Other photosensitive polybenzoxazole resins, (II), were prepared by the authors... 

High-performance polyimide-positive photosensitive heat resistance resins, (id, were prepared by Yamanaka et al. (3) and used in photosensitive compositions. 

Observations Photosensitive resin compositions containing polyazomethines are... 

Research Focus Preparation of photosensitive adamantane resins for use in photoresists. Originality This is the first example of using dimethyl sulfoxide to prepare 3-... 

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