Spin coater

Table I describes the resins that were evaluated. Films of the resins were applied to topographic substrates by spin coating from concentrated solutions of the resins in volatile spinning solvents using a Headway Research Model EC101 spin coater. After 2 minutes of spinning the coated substrates were transferred to a hot plate for baking. The temperature of the hotplate was measured with a surface thermometer.

Negative two-layer resist. A cresol novolac resin (Alnovol PN-430) was spin-coated on a silicon wafer and baked at 80V, for one minute on a hot plate. The silicon wafer was set on a spin-coater and a photosensitive solution consisting of D1 (3 wtlfc), PVP (5 wt%), acetic acid (46 wt%), and water (46 wt%) was... 

Spin coater Fiber spinner Crystallizer Conveyer Kiln... 

Ultra-thick microfluidic stmctures (up to 1.5 mm high) were fabricated using SU-8 photoresist. Instead of using a spin-coater, a constant-volume injection method was used to apply thick photoresist for patterning [237]. 

Drop shape analysis system DSA 10 (KRUSS) was used for contact angle measurements. X-ray Photoelectron Spectroscopy studies were performed on an ESCA 5700 from Physical Electronics. The S2P spectra were recorded from a sampling area of ca. 1 mm2 with a takeoff angle of 45° and analyzer pass energy of 29.35 eV. Acquisition times were ca. 9 min with a base pressure less than 5 x 10 10mbar. Spin coater model P 6700 series (Speedline Technologies) was used to prepare thin film... 

Wide Range of Vacuum Chucks Available To Hold Different Substrates in KW-4A Spin Coater... 

We coated the resists on Si substrate with spin coater to get thinner resists. Then, we wrote the arrays on the sample after pre-baking and justing the probe focus on the sample using the SEM function. We drew the array pattern in the resist with a proper exposure dosage at 30 kV. Finally, we evaluated whether the arrays pattern could be formed using the SEM fimction after development and rinse treatment. 

Each polymer was first cast onto a quartz plate, via a spin coater, in order to establish the coating conditions which would yield films of equal optical density (O.D.) and therefore thickness. These conditions were then used to coat each polymer formulation onto an aluminum substrate. The films were dried in air at ambient temperature. Typical absorption curves obtained for these films on quartz can be seen in Fig. 6. 

Thin films of PEO can be prepared by spin coating filtered (mesh size ca. 0.2 pm) solutions of PEO in chloroform onto precleaned silicon wafers or glass cover slips using a conventional spin-coater (typical concentrations of 1.0-20.0 mg/ml and typical spinning speeds of 2,000-3,000 rpm for 1 min are recommended for film thicknesses between ca. 15 and 300 nm). The cleaning of silicon wafers can be carried out in a plasma cleaner or using oxidizing solutions [59]. The films should be dried for at least 24 h in vacuum to remove residual solvent. 

Thin film samples were prepared by spin coating 15% solutions of the polyamic acids shown in Table I (structures are shown in Figure 1) onto 13-mm X 2-mm NaCl disks using a spin coater running at 5000 RPM... 

Each substrate was cleaned on the spin coater by rinsing successively with acetone, isopropyl alcohol, and deionized water. 

Both materials were subjected to the same processing conditions. The cure profile consisted of heating from room temperature to 2 60°C at 5°C/min, holding at 260°C for 2 hours, then cooling to room temperature at 5°C/min. As can be seen in Figure 3, their stress-temperature profiles are quite different. Both films left the spin-coater with approximately zero stress. Upon heating, the polyimide film developed substantial tensile stress due to film contraction from solvent evaporation while the BCB film exhibited only mild tensile stress buildup. The stress in the BCB film relaxed at 260°C while the stress in the polyimide did not. 

A silicon wafer was cleaned with ethanol and coated with a thin layer (about 0.5 pm) of 2.8e (3% solution in THF) by the application of a spin-coater. Irradiation through a mask (or any other device which provides irradiated and unirradiated zones) with UV light. X-rays or electron beams generated a pattern which was developed by a short immersion into THF. The unchanged polymer was dissolved and the irradiated parts with the crosslinked polymer remained. (Principally, this imaging technique with a negative resist... 

Spin coater or a centrifuge that will run at 500 x g (Fisher AccuSpin Model 400, Catalog No 13-100-557). 

Using a thin artist brush, paint the PZT and the adhesive layer with a thin coat of polyurethane. Spin down at 500 for 5 min in an available spin coater, or in a laboratory centrifuge. 

A SU8-100 photoresist solution (PRS) was used in all of the procedures. In order to make the three-layer photoresist patterns for the top master, the first layer was coated as 50 pm thick on a 100 mm diameter silicon wafer 2mL PRS was spun at 500 rpm for 10 s following at 5000 rpm for 30 s with a spin coater. The spin-coated wafer was baked at 60 °C for 10 min, and then at 95 °C for 30 min. After baking, the photomask image (Figure 4.5A) was patterned on the first layer using a UV lamp (370 nm) in a mask aligner for 30 s. On the exposed first layer without a developing step, the second layer for the profile of the ESI emitter was coated as 200 pm thick 4mF PRS was spun at 500 rpm for 20 s followed by 2000 rpm for 30 s. The wafer coated with two layers was baked at 60 °C for 20 min, and then at 95 °C for 60 min. The baked wafer was exposed with a second... 

For this purpose, various spin coaters are commercially available. Fig. 14 shows a spin coater made by Convac GmbH (Germany). 

Germanium ATR crystals were coated with thin polymer films by spin-coating techniques. A commercially available spin coater (Headway Research, Inc., Model EC-101) with a specially designed Teflon chuck was used to hold the Ge crystal. For example, Biomer--the medical polyurethane supplied by Ethicon (Somerville, NJ)--was applied in three to four coats in a 1.5 percent solution of cyclohexanone to produce stable films with thickness less than the depth of penetration of the IR field. 

Programmable spin coater (e.g., model WS-650S, Laurell Technologies Corp., North Wales, PA). 

Select the appropriate SU-8 required for achieving the desired feature height of the device. Coat the wafer with SU-8 in a spin coater using the appropriate spin speeds and times for the corresponding feature height see Note 2). 

Rubner, 2000) (in the case of weak polyelectrolytes) of the assembly solution, the polyelectrolyte chain conformation is modified, and hence the resulting film architecture is tuned. For instance, one can control thickness (Losche et al., 1998 Dubas and Schlenoff, 1999), permeability (Rmaile and Schlenoff, 2003), morphology (Antipov et al., 2003 McAloney et al., 2003 Mendelsohn et al., 2000), and density (Dragan et al., 2003). Recently the technique has been modified to assemble the alternate layers using a spin-coater, which reduces the assembly times and adsorption solution volumes considerably (Chiarelli et al., 2001 Cho et al., 2001 Lee et al., 2003, 2001). 

Once the secondary thiol treatment was finished, the chemically patterned template was immediately put on the rotating plate of a spin coater (Specialty Coatings Systems G3P-8) prefilled with high purity nitrogen gas and a droplet of polymer solution, such as 1 wt% PS in DMF, 1 wt% PAA in DMF, or 1 wt% PS/PAA with 70/30 ratio in DMF, was placed on the top of the pattern area of the template. After remaining quiescent for 5 minutes, the polymer solution was spin-coated on the template surface with 3000 rpm... 

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