Isothermal capacitance transient spectroscopy

Capacitance transient spectroscopy encompasses a powerful set of techniques to detect and characterise deep levels in semiconductors. The list of techniques applied for III-V nitrides includes deep level transient spectroscopy (DLTS) [1,2], double correlation DLTS (DDLTS) [3], isothermal capacitance transient spectroscopy (ICTS) [2], photoemission capacitance transient spectroscopy (ODLTS) [4] and optical ICTS (OICTS) [5], This Datareview presents the current status of deep level studies by capacitance transient techniques for III-V nitrides. A brief introduction to the techniques is given, followed by an example that demonstrates the application of DLTS and DDLTS for Si-doped... 

I ICP ICP-RIE ICTS ID IDB IR interstitial inductively coupled plasma etching inductively-coupled-plasma reactive ion etching isothermal capacitance transient spectroscopy inversion domain inversion domain boundary infrared... 

ODENDOR ODLTS ODMR OICTS OLCAO OMVPE OSC optically detected electron nuclear double resonance optical deep level transient spectroscopy optically detected magnetic resonance optical isothermal capacitance transient spectroscopy orthogonalised linear combination of atomic orbitals organo-metallic vapour phase epitaxy on-surface-cracking... 

The most widely used of these methods in the study of a-Si H have been field-effect, capacitance, and deep level transient spectroscopy (DLTS) measurements. Capacitance measurements actually include quite a number of variations such as capacitance versus applied voltage (C- V), frequency (C- w), or temperature (C-T), and also several kinds of distinct capacitance profiling techniques. The technique referred to as DLTS normally includes both capacitance-transient as well as current-transient measurements and will also be used as a generic term for such recent variations as isothermal capacitance transient spectroscopy (ICTS), constant capacitance methods, and the like. 

There exist several variations of the capacitance-transient DLTS procedure described above. A couple of these that have been applied recently to the study of a-Si H are isothermal capacitance transient spectroscopy (ICTS)byOkushicrfl/.(1981,1982, and 1983) and the constant capacitance DLTS method (CC-DLTS) utilized by Johnson (1983). 

The depth of the doubly occupied dangling-bond centers, i.e., the ionization energy of the second electron at the dangling-bond center, is also estimated from other experiments. The value of E of 0.6 eV for a-Si H sample No. 519 agrees with that estimated from isothermal capacitance transient spectroscopy (ICTS) measurements by Okushi et al. (1982), i.e., 0.56 eV. The depth of singly occupied neutral dangling-bond centers cannot be estimated from the ODMR measurement. This level lies lower than the D level... 

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