Photovoltaic cells amorphous

Fig. 5. Efficiency improvements in photovoltaic cells where ( ) corresponds to GaAs (—) InP ( ) CdS ( ) CdTe ( ) amorphous siUcon and...

The thickness of a photovoltaic cell is chosen on the basis of its ability to absorb sunlight, which in turn depends on the bandgap and absorption coefficient of the semiconductor. For instance, 5 nm of crystalline silicon are required to absorb the same amount of sunlight as 0.1 nm of amorphous silicon and 0.01 nm of copper-indium diselenide. Only MBE and MOCVD are capable of producing such extremely thin films.i l... 

The great energy consumption, limited recources of traditional fuels and environmental problems have lead to intensive research on the conversion of solar energy during the last fifteen years. Conversion into electrical energy has been realized in technical devices consisting of pn-junction photovoltaic cells. Efficiencies of up to 20 % have been obtained with single crystal devices and around 9 % with polycrystalline or amorphous layers. 

Amorphous Silicon An alloy of silica and hydrogen, with a disordered, noncrystalline internal atomic arrangement, that can be deposited in thin layers (a few micrometers in thickness) by a number of deposition methods to produce thin-film photovoltaic cells on glass, metal or plastic substrates. 

Photovoltaics also require significant research activity in the chemical sciences. Low-cost methods are required for producing solar-grade silicon for photovoltaic cells. Better solar cell materials are needed than the presently utilized amorphous silicon. These materials must be more efficient without the use of heavy metals such as cadmium, tellurium, indium, and lead, which present significant environmental issues. An understanding of the degradation process of photovoltaic cells is needed, as is an answer to why these materials lose their effectiveness after prolonged exposure to the sun. Finally, there is a need to develop catalysts for the efficient photochemical conversion of water. 

Abstract Photovoltaic cells have been dominated so far by solid state p-n junction devices made from silicon or gallium arsenide wavers or thin film embodiments based on amorphous silicon, CdTe and copper indium gallium diselenide (CIGS) profiting from the experience and material availability of the semiconductor industry. Recently there has been a surge of interest for devices that are based on nanoscale inorganic or organic semiconductors commonly referred to as bulk junctions due to their interconnected three-dimensional structure. The present chapter describes the state of the art of the academic and industrial development of nanostructured solar cells, with emphasis in the development of the dye-sensitized nanocristalline solar cell. 

Jin et al. (123, 264) recently reported on photovoltaic cells constructed using doped sol-gel coatings to utilize the fluorescence characteristics of [Eu (phen)2l and [Tb(bpy)2] (Fig. 24). The output of the photovoltaic devices fabricated with single crystal or amorphous silicon increases by 8-18%—a very significant improvement in efficiency. 

Theoretical conversion efficiencies of photovoltaic systems depend on the semiconductor materials used in the cells and on the ambient tanperatuie. The materials currently used to make photovoltaic cells can be grouped into three broad categories 1) expensive, efficient monocrystalline silicon, 2) less efficient but much lower cost polycrystalline silicon, and 3) the lowest cost and poorest performer, amorphous silicon material. Conversion efficiencies of commercial polycrystaUine silicon cells are 10 to 15 percent. Now the primary development areas are in how to use monocrystalline silicon with solar concentrators and making thin-film cells by depositing a 5- to 20-micron film of silicon onto an inexpensive substrate, because the estimated efficiency of these cells is above 20 percent. Work is ongoing with other materials, including amorphous silicon (a-Si), copper indium diselenide (CuInSe2 or CIS) and related materials, and cadmium telluride (CdTe). 

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