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Thin films, making

The solidihed layer yields and returns to the liquid phase if the shear stress excesses the critical value, which initiates the sliding. When the stress is relaxed as a result of slip, the solid phase resumes again. The periodic transition between the solid and liquid states has been interpreted in the literature as a major cause of the stick-slip motion in lubricated sliding. Understanding the stick-slip and static friction in terms of solid-liquid transitions in thin films makes a re-... [Pg.85]

Improvement of durability in thin films making application errors less damaging [5.55]. [Pg.209]

Figure 6 shows the MD predicted in-plane and out-of-plane thermal eonduetivities at 376K (Fig. 6a) and lOOOK (Fig. 6b) as a function of film thickness. It is seen that both the in-plane and out-of-plane thermal conductivities are affeeted by the thiekness of the film. For thiekness smaller than the phonon mean free path (approximately 300 nm and 30 nm at 300K and lOOOK, respeetively), both the in-plane and out-of-plane thermal eonduetivities deerease with deereasing thiekness, an effeet attributed to the scattering of phonons with the boundaries of the thin film. This effeet is more pronounced in the out-of-plane direction, where the dimensions of the thin film make the phonon transport ballistic. At large thicknesses, the thermal conductivities approach the bulk value (shown as dashed lines in Fig. 6). The bulk value is reached at smaller thicknesses at lOOOK due to the smaller phonon mean free path at this temperature. Figure 6 shows the MD predicted in-plane and out-of-plane thermal eonduetivities at 376K (Fig. 6a) and lOOOK (Fig. 6b) as a function of film thickness. It is seen that both the in-plane and out-of-plane thermal conductivities are affeeted by the thiekness of the film. For thiekness smaller than the phonon mean free path (approximately 300 nm and 30 nm at 300K and lOOOK, respeetively), both the in-plane and out-of-plane thermal eonduetivities deerease with deereasing thiekness, an effeet attributed to the scattering of phonons with the boundaries of the thin film. This effeet is more pronounced in the out-of-plane direction, where the dimensions of the thin film make the phonon transport ballistic. At large thicknesses, the thermal conductivities approach the bulk value (shown as dashed lines in Fig. 6). The bulk value is reached at smaller thicknesses at lOOOK due to the smaller phonon mean free path at this temperature.
We saw that studying thin films makes it necessary for the diffraction patterns to be produced at a fixed and controlled incidence. We will assume that we are conducting an experiment with this type of equipment and that we want to find out whether the film is textured or not. [Pg.286]

The results of this Investigation Illustrate the utility of SAW devices in characterizing the properties of thin films formed on the substrate of the device. Using the SAW device as an extremely sensitive microbalance, N2 adsorption isotherms have been obtained directly on thin films. This has allowed the characterization of the surface area and pore size distribution in the film. In general, these measurements are not possible with conventional instrumentation due to the low total surface area present in thin film samples. As another application, SAW device frequency transients can be used to monitor diffusion of species in polymer films in real-time. The short diffusional length scale present in a thin film makes the time required for saturation of the film orders of magnitude shorter than would be required with bulk samples. This allows for a dramatic decrease in the time required for determining diffusion coefficients. [Pg.220]

Historically, nearly all the early investigations into the ferroelectric properties of PVDF were carried out on thin ( 25 jam) films. This was necessary for very good reasons. Most importantly, the material must be oriented to develop an incipient ferroelectric structure. This is most conveniently done by using conventional thin film making equipment, which stretches a preformed polymer strip in either one or two in-plane directions. In addition to this requirement, very high fields (typically 100 kV mm ) must be applied to the oriented polymer during the poling... [Pg.193]

Most of the kinetic studies of Sn02-based ceramic are developed to oxide mixed synthesis compressed into pellets, where significant amounts of mass are used. However, the appearance of thick and thin films makes possible the integration of smaller electric devices, and thus new techniques for the s)mthesis and deposition of powders on conductive and insulating rigid substrates have been studied. [Pg.38]

Make an estimate of the hydrostatic pressure that might be present in the Plateau border formed by the meeting of three thin black films. Make the assumptions of your calculation clear. [Pg.527]

In order to make a multipurpose plant even more versatile than module IV, equipment for unit operations such as soHd materials handling, high temperature/high pressure reaction, fractional distillation (qv), Hquid—Hquid extraction (see Extraction, liquid-liquid), soHd—Hquid separation, thin-film evaporation (qv), dryiag (qv), size reduction (qv) of soHds, and adsorption (qv) and absorption (qv), maybe iastalled. [Pg.438]

Fig. 10. Schematic of casting machine used to make microporous membranes by watervapor imbibition. A casting solution is deposited as a thin film on a moving stainless steel belt. The film passes through a series of humid and dry chambers, where the solvent evaporates from the solution, and water vapor is absorbed from the air. This precipitates the polymer, forming a microporous membrane that is taken up on a collection roU (25). Fig. 10. Schematic of casting machine used to make microporous membranes by watervapor imbibition. A casting solution is deposited as a thin film on a moving stainless steel belt. The film passes through a series of humid and dry chambers, where the solvent evaporates from the solution, and water vapor is absorbed from the air. This precipitates the polymer, forming a microporous membrane that is taken up on a collection roU (25).
A concept gaining support is a hybrid approach to making thick crystalline silicon efficient in thin layers. Although conventional crystalline silicon cells have gone from 400—600-p.m thick to 200—300-p.m, thin-film crystalline silicon cells have reached 10% efficiency while being only 10-p.m thick. [Pg.471]

BiaxiaHy orieated PPS film is transpareat and nearly colorless. It has low permeability to water vapor, carbon dioxide, and oxygen. PPS film has a low coefficient of hygroscopic expansion and a low dissipation factor, making it a candidate material for information storage devices and for thin-film capacitors. Chemical and thermal stability of PPS film derives from inherent resia properties. PPS films exposed to tolueae or chloroform for 8 weeks retaia 75% of theh original streagth. The UL temperature iadex rating of PPS film is 160°C for mechanical appHcatioas and 180°C for electrical appHcations. Table 9 summarizes the properties of PPS film. [Pg.450]

Anodic Oxidation. The abiUty of tantalum to support a stable, insulating anodic oxide film accounts for the majority of tantalum powder usage (see Thin films). The film is produced or formed by making the metal, usually as a sintered porous pellet, the anode in an electrochemical cell. The electrolyte is most often a dilute aqueous solution of phosphoric acid, although high voltage appHcations often require substitution of some of the water with more aprotic solvents like ethylene glycol or Carbowax (49). The electrolyte temperature is between 60 and 90°C. [Pg.331]


See other pages where Thin films, making is mentioned: [Pg.361]    [Pg.342]    [Pg.361]    [Pg.186]    [Pg.472]    [Pg.74]    [Pg.166]    [Pg.183]    [Pg.23]    [Pg.190]    [Pg.18]    [Pg.259]    [Pg.741]    [Pg.361]    [Pg.342]    [Pg.361]    [Pg.186]    [Pg.472]    [Pg.74]    [Pg.166]    [Pg.183]    [Pg.23]    [Pg.190]    [Pg.18]    [Pg.259]    [Pg.741]    [Pg.1249]    [Pg.92]    [Pg.435]    [Pg.171]    [Pg.429]    [Pg.80]    [Pg.178]    [Pg.179]    [Pg.180]    [Pg.198]    [Pg.69]    [Pg.477]    [Pg.326]    [Pg.384]    [Pg.80]    [Pg.306]    [Pg.184]    [Pg.345]    [Pg.398]    [Pg.151]    [Pg.234]    [Pg.31]    [Pg.36]    [Pg.115]   
See also in sourсe #XX -- [ Pg.7 ]




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