Performance, chemically amplified

Polymer Properties and Lithographic Performance in Chemically Amplified Resins. 

Three matrix polymers were chosen to evaluate the effect of polymer structure on the performance of chemically amplified resists. TBS was used as the reference material, while TBMS and TBSS were selected because of their ability to undergo... 

It has been reported that the incorporation of nanoparticles such as fullerene and oligosilsesquioxane (POSS) to resist matrix improves the resist performance such as etch resistance and mechanical properties [107]. These resists are called nanocomposite resists. A single-component chemically amplified resist that incorporates not only POSS but also an acid generator into its main chain has been reported [108]. 

Recent progress has been made in microelectronic device fabrication, particularly in microlithography used to manufacture the high-resolution circuit elements of integrated circuit (Ref. 96). Deep-UV photolithography based on chemically amplified resist is likely to be the first technology that met the severe performance criteria required. The best known chemically amplified resist is based on poly (4-t-butoxycarbonyloxy styrene) or copolymers (Ref. 97). 

Kurihara, M. Segawa, T. Okuno, D. Hayashi, N. Sano, H. Performance of a chemically amplified positive resist for next-generation photomask fabrication. Proc. SPIE 1998, 3412, 279-291. 

The industry roadmap specifies the need for chemically amplified resists that provide lithographic performance suitable to sustain their extension to 20 nm dimensional regime [522]. The ultimate resolution of 0.3 nm has been demonstrated by moving atoms at will with a scanning tunneling microscope [523] but the process is too slow to be economically feasible (one atom/min or... 

H. Iwasaki, T. Itani, M. Fujimoto, and K. Kasama, Acid size effects of chemically amplified negative resist on lithographic performance, Proc. SPIE 2195, 164 172 (1994) U. Schedeli, N. Miinzel, H. Holzwarth, S.G. Slater, and O. Nalamasu, Relationship between physical properties and lithographic behavior in a high resolution positive tone deep UV resist, Proc. SPIE 2195, 98 110 (1994). 

Photoacid diffusion behavior in t-BOC-blocked chemically amplified positive DUV resists under various conditions was studied. Based on the experimental results, it was confirmed that only one mechanism dominated the acid diffusion in the resist film, and two diffusion paths, i.e., the remaining solvent in the resist film and hydrophilic OH sites of base phenolic resin, existed. Moreover, the effects of molecular weight dispersion, acid structure, and additional base component on both acid-diffusion behavior and lithographic performance were revealed. Finally, the acid diffusion behavior in the resist film was clarified and the acid diffusion length that affected the resist performance could be controlled. 

Exploration of Chemically Amplified Resist Mechanisms and Performance at Small Linewidths... 

Practical additive effect of an add amplifier was verified by evaluating photolithographic characteristics of a chemically amplified photoresist for 193 nm photomicropatteming both photosensitivity and pattern profiles were improved. The optimization of the chemical structure of the add amplifier and of its combination with a suitable dissolution inhibitor should be a promising way to give high performance photoresists for microphotopatteming. 

The PanAquas were found to provide a simple and effective discharge solution for e-beam lithography [65]. In particular, the unsubstituted derivative where R = H in Fig. 32.11 was spin-applied onto the surface of a number of common resists used in the industry such as novolacs, acrylates, and chemically amplified systems [4] and was found to be compatible. The performance of the resist was not sacrificed in any way. A 2000 A... 

A chemically amplified, positive-working resist system based on silylated polyhydroxystyrene has shown its capability for application to quarter micron lithography. The present paper describes the recent improvement in the resist performance achieved through studies on polymer characteristics and process conditions. Possible measures to suppress a peculiar problem of positive-working chemical amplification systems, i.e., formation of T-shaped profile, is also presented. Although the development is still on the way, the silylated polyhydroxystyrene based resist tem shows excellent properties on resolution capability, sensitivity and process latitude. 

A new family of chemically amplified positive resists based on methaaylate terpolymers has been developed. The three different monomers each perform a separate function in the terpolymer. These resists were original designed for use in printed circuit board (PCB) fabrication. The flexibility of this approach in the design of positive resists has recently been demonstrated in the development of several new integrated circuit (IC) positive resists for deep UV (248 nm) and deep, deep UV (193 nm) lithography. These advances demonstrate that resists for wide application can be designed from a common platform of materials technology. 

Figure 37 Illustration of the concept of the RLS trade-off (i.e., resolution ine edge roughness-sensitivity trade-off) that occurs in conventional chemically amplified photoresist designs/formulations. Foragiven resist design (i.e., essentially foragiven resist polymer), one can typically reformulate the resist to achieve better properties in two of the three important performance metrics (i.e., R, L, or S) at the expense of worse performance in the third metric. Mew polymer designs or entirely new photoresist schemes are needed to improve aii three performance metrics simultaneously.

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