Chemically amplified positive resists based

Non-chemically amplified positive resists based on main chain scission... 

A new family of chemically amplified positive resists based on methaaylate terpolymers has been developed. The three different monomers each perform a separate function in the terpolymer. These resists were original designed for use in printed circuit board (PCB) fabrication. The flexibility of this approach in the design of positive resists has recently been demonstrated in the development of several new integrated circuit (IC) positive resists for deep UV (248 nm) and deep, deep UV (193 nm) lithography. These advances demonstrate that resists for wide application can be designed from a common platform of materials technology. 

Photoacid diffusion behavior in t-BOC-blocked chemically amplified positive DUV resists under various conditions was studied. Based on the experimental results, it was confirmed that only one mechanism dominated the acid diffusion in the resist film, and two diffusion paths, i.e., the remaining solvent in the resist film and hydrophilic OH sites of base phenolic resin, existed. Moreover, the effects of molecular weight dispersion, acid structure, and additional base component on both acid-diffusion behavior and lithographic performance were revealed. Finally, the acid diffusion behavior in the resist film was clarified and the acid diffusion length that affected the resist performance could be controlled. 

A chemically amplified, positive-working resist system based on silylated polyhydroxystyrene has shown its capability for application to quarter micron lithography. The present paper describes the recent improvement in the resist performance achieved through studies on polymer characteristics and process conditions. Possible measures to suppress a peculiar problem of positive-working chemical amplification systems, i.e., formation of T-shaped profile, is also presented. Although the development is still on the way, the silylated polyhydroxystyrene based resist tem shows excellent properties on resolution capability, sensitivity and process latitude. 

A chemically amplified deep UV photoresist system based on acetal chemistiy is reported. Acetal-protected pol vinylphenols) were prepared either by free radical polymerization of the monomers or chemical modification of poly(vinylphenol). In the presence of an add as a catalyst, the polymers thermally decomposed to aqueous base soluble po vinylphenol) and some small molecules. Therefore, the resists were formulated with the acetal-protected polymers and a photoadd generator such as triphei lsulfonium hex-afluoroantimonate. Positive-tone image could be resolved 1 exposing the resist film in deep UV region, post-baking, and developing in tetramethylam-monium hydroxide solutions. 

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