Chemical vapor deposition film growth

For some time, mixtures of H2 and natural gas have been used for chemical vapor deposition (CVD) growth of diamond-like carbon (DEC) films. It is now possible to use this technique to grow diamond seed crystals to produce clear, perfect colorless diamonds. Diamonds grown by the high-pressure methods are invariably doped and thus colored. One company, Apollo, has used the CVD technique to grow 1-ct diamonds. 

The iron-rich ceramics from films PS-6-PFS function as catalysts for the growth of single-walled carbon nanotubes (SWCNT). Typically, thin films were self-assembled and treated with UV-ozone to remove organic materials and subsequently used for the simple one-step chemical vapor deposition (CVD) growth of SWCNTs. The resulting SWCNTs were characterized by... 

Unfortunately, attempts over 30 years of GaN epitaxy research repeatedly indicated that the nonpolar planes were xmstable [6-13]. One study after another yielded nonpolar films with surfaces too rough and/or faceted for device growth. In 2000, Waltereit ef al. first demonstrated planar m-plane GaN growth via molecular beam epitaxy (MBE) [5]. This demonstration was followed by metalorganic chemical vapor deposition (MOCVD) growth of planar o-plane GaN films in 2002 by Craven et al. [14]. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Chemical Vapor Deposition. In chemical vapor deposition (CVD), often referred to as vapor transport, the desired constituent(s) to be deposited are ia the form of a compound existing as a vapor at an appropriate temperature. This vapor decomposes with or without a reducing or oxidizing agent at the substrate— vapor interface for film growth. CVD has been used successfully for preparing garnet and ortho ferrite films (24,25). Laser-assisted CVD is also practiced. 

Balog, M., Schieber, M., Patai, S., andMichman, M., Thin Films of Metal Oxides on Silicon by Chemical Vapor Deposition with Organometallic Compounds, J. of Crystal Growth, 17 298-301 (1972)... 

Chemical vapor deposition (CVD) of carbon from propane is the main reaction in the fabrication of the C/C composites [1,2] and the C-SiC functionally graded material [3,4,5]. The carbon deposition rate from propane is high compared with those from other aliphatic hydrocarbons [4]. Propane is rapidly decomposed in the gas phase and various hydrocarbons are formed independently of the film growth in the CVD reactor. The propane concentration distribution is determined by the gas-phase kinetics. The gas-phase reaction model, in addition to the film growth reaction model, is required for the numerical simulation of the CVD reactor for designing and controlling purposes. Therefore, a compact gas-phase reaction model is preferred. The authors proposed the procedure to reduce an elementary reaction model consisting of hundreds of reactions to a compact model objectively [6]. In this study, the procedure is applied to propane pyrolysis for carbon CVD and a compact gas-phase reaction model is built by the proposed procedure and the kinetic parameters are determined from the experimental results. 

Figure 3.16 Different steps in the fabrication of MWNT nanoelectrode arrays, (a) metal film deposition, (b) catalyst deposition, (c) plasma-enhanced chemical vapor deposition for CNT growth, (d) dielectric encapsulation with Si02, (e) planarization with a chemical mechanical polishing to expose the ends of the carbon nanotubes, (f) electrochemical characterization. Readapted from Ref [6].

---