Metal-insulator-semiconductor diodes

P. Estrela, P. Migliorato, H. Takiguchi, H. Fukushima, and S. Nebashi, Electrical detection of biomolecular interactions with metal-insulator-semiconductor diodes. Biosens. Bioelectron. 20, 1580-1586 (2005). 

Figure 4.15. Top Cross section of a MISS diode. The device can be regarded as a reverse-biased metal-insulator-semiconductor diode in series with a for-ward-biased n-p Junction. It then exhibits two stable states separated by an unstable negative resistance region. Bottom Current-voltage characteristics for a GaAs-(j -TA MISS device. The LB film thickness is approximately 9 nm...

The most common detector for AES is the photomultiplier tube (see p. 174). An alternative approach for the detection of multielement (multiwavelength) information is the charged-coupled device (CCD). A CCD is essentially an array of closely spaced metal-insulator-semiconductor diodes formed on a wafer of semiconductor material. Incident light striking the CCD is converted into an electrical signal. 

Schottky diodes, metal-insulator-semiconductor diodes, MIS field-effect transistors, and light-emitting diodes have all been prepared by using these polymeric materials [13-17]. With the discovery of high temperature superconductivity, new opportunities exist for the development of hybrid conductive polymer/superconductor systems in which the unique properties of the conducting polymers complement the properties of high-Tc superconductors for novel applications. 

Alivov, Ya.L, Look, D.C., Ataev, B.M., Chukichev, M.V., Mamedov, V.V., Zinenko, V.L, Agafonov, Yu.A. and Pustovit, A.N. (2004) Fabrication of ZnO-based metal-insulator-semiconductor diode by ion implantation. Solid-State Electronics, 48, 2343. 

ZnO, and heterostructure devices. Among the devices, light emitters, microcavities, optically pumped lasers, photodiodes, metal-insulator-semiconductor diodes, field-effect transistors, transparent conducting oxides, and transparent thin-fihn transistors based on ZnO, piezoelectric devices in the form of surface acoustic wave devices, and gas and biosensor followed by solar cells cap the discussion. 

We have found that the polymer prepared in this way is very well suited for use in semiconductor device structures in which a semiconductor of one carrier type only is required (unipolar devices). The polymer as prepared is extrinsically doped with p-type carriers, to a concentration in the range lO to 10 8 cm 3, and these dopants are not readily mobile under the applied electric fields within these structures. We have made and measured Schottky-barrier diodes, MIS (Metal Insulator Semiconductor) diodes and MISFETs (MIS Field Effect Transistors), and it is the results of these investigations, some of which are published elsewhere [11-17], which are presented in the present chapter. 

M. Sharma, S.K. Tripathi, Analysis of interface states and series resistance for Al/PVA n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures, Appl. Phys. A 113 (2013)491-499. 

A Schottky diode is always operated under depletion conditions flat-band condition would involve giant currents. A Schottky diode, therefore, models the silicon electrolyte interface only accurately as long as the charge transfer is limited by the electrode. If the charge transfer becomes reaction-limited or diffusion-limited, the electrode may as well be under accumulation or inversion. The solid-state equivalent would now be a metal-insulator-semiconductor (MIS) structure. However, the I-V characteristic of a real silicon-electrolyte interface may exhibit features unlike any solid-state device, as... 

In a second embodiment the imager is a metal-insulator-semiconductor, MIS, structure throughout. That is, the read lines 42, 44 and 46 and output collectors 48, 50 and 52 are MIS structures. The contiguous read lines 42, 44 and 46 and output collectors 48, 50 and 52, in another embodiment, are formed in a spaced relationship by gaps and a pulsed barrier switch is utilized to control charge flow through the gaps. The use of the pulsed barrier switch makes possible a pn-junction read line and MIS output diode, or an MIS read line and pn-junction output diode. 

A two colour infrared detector is described in US-A-5300777 which for each detector element comprises a heterojunction diode and a metal-insulator-semiconductor device. 

Due to the technological importance of metal-insulator-semiconductor (MIS) devices, understanding of the nature of their electrical characteristics such as current-voltage (1-V) and tunnel magnetoresistance (TMR) is of great interest. Unless intentionally fabricated, a silicon Schottky diode possesses a thin interfacial oxide layer between the metal and the semiconductor. Additionally, a density of interface states is always generated at the boundary between the semiconductor and insulator. 

One IC-based sensor array approaching commercialization is the Wide Range Ha Sensor [63, 64], which combined CMOS-compatible metal-insulated semiconductor (MIS) diode sensors and resistive sensors (Pd-Ni alloy) with on-chip control electronics. The wide-range claim relies on the MIS sensor for sensitivity to low concentrations of hydrogen gas (0.1%), and the resistive sensor for higher concentrations (1-100%). Non-standard IC processes for deposition of the Pd-based structures were devised at the Sandia foundry. Tests indicated little variability among sensors, e.g. 1-2% error. It was found that sensor exposures... 

The use of semiconducting conjugated polymers as an electro-active material in microelectronic devices is a rapidly growing area. Burroughes et al. [248] reported the first examples of high-performance Schottky diodes, metal-insulator semiconductor (MIS) diodes and the MIS-field effect transistor (MISFET) structure involving conjugated polymers. 

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