Lead antimonide

Lead—antimony or lead—arsenic ahoys must not be mixed with lead—calcium (aluminum) ahoys in the molten state. Addition of lead—calcium—aluminum ahoys to lead—antimony ahoys results in reaction of calcium or aluminum with the antimony and arsenic to form arsenides and antimonides. The dross containing the arsenides and antimonides floats to the surface of the molten lead ahoy and may generate poisonous arsine or stibine if it becomes wet. Care must be taken to prevent mixing of calcium and antimony ahoys and to ensure proper handling of drosses. 

While most other techniques use a limited amount of detectors (e.g., silica for visible, photomultipliers for UV) and MIR has a small number, NIR uses many types of semiconductors for detectors. The original PbS detectors are still one of the largest used in NIR, however, indium gallium arsenide (InGaAs), indium arsenide (InAs), indium antimonide (InSb), and lead selenide (PbSe) are among the semiconductor combinations used, both cooled and ambient. 

Individually indexed alloys or intermetallic compounds are Aluminium amalgam, 0051 Aluminium-copper-zinc alloy, 0050 Aluminium-lanthanum-nickel alloy, 0080 Aluminium-lithium alloy, 0052 Aluminium-magnesium alloy, 0053 Aluminium-nickel alloys, 0055 Aluminium-titanium alloys, 0056 Copper-zinc alloys, 4268 Ferromanganese, 4389 Ferrotitanium, 4391 Lanthanum-nickel alloy, 4678 Lead-tin alloys, 4883 Lead-zirconium alloys, 4884 Lithium-magnesium alloy, 4681 Lithium-tin alloys, 4682 Plutonium bismuthide, 0231 Potassium antimonide, 4673 Potassium-sodium alloy, 4646 Silicon-zirconium alloys, 4910... 

Indiums low melting point is the major factor in determining its commercial importance. This factor makes it ideal for soldering the lead wires to semiconductors and transistors in the electronics industry. The compounds of indium arsenide, indium antimonide, and indium phosphide are used to construct semiconductors that have specialized functions in the electronics industry. 

Typical materials used in NIR photoconductive detectors are PbS, PbSe, InSb and InAs (lead sulphide, lead selenide, indium antimonide and indium arsenide). 

Lead—tin alloys, 4877 Lead—zirconium alloys, 4878 Lithium—magnesium alloy, 4676 Lithium—tin alloys, 4677 Plutonium bismuthide, 0231 Potassium antimonide, 4668 Potassium—sodium alloy, 4641 Silicon—zirconium alloys, 4904 Silver—aluminium alloy, 0002 Silvered copper, 0003 Sodium germanide, 4412 Sodium—antimony alloy, 4791 Sodium—zinc alloy, 4792 Titanium—zirconium alloys, 4915... 

Combined with arsenic, nickel occurs in the mineral niccolite, nickeline, ox copper nickel, NiAs. It is rarely crystalline, but when it is the form is hexagonal hardness 5-5 density 7-5. Its coppery rcdl hue is characteristic, only two other minerals, namely, copper arsenide and breihauptite or nickel antimonide, NiSb, bearing any resemblance to it. This latter mineral occurs at Andreasberg, in the Harz, is usually massive, and often associated with a considerable amount of lead sulphide. Crystals are rare hexagonal. 

This type of detector is constituted, for the mid-IR region, of a ternary alloy of mercury-cadmium telluride (MCT) or indium antimonide (InSb) deposited upon an inert support and for the near-IR of lead sulfide (PbS) or an other ternary alloy of indium/gallium/arsenic (InGaAs). Sensitivity is improved when these detectors are cooled down to liquid nitrogen temperature of (77 K). 

Photoconductive materials such as lead sulfide, lead selenide or indium antimonide, which respond to incident infrared radiation by changing their electrical resistance, are used as the sensing elements in instrumentation for radiometric measurement of temperature. Bowden and Thomas [27] measured the temperature of "hot spots" in the sliding of a metal rider against a glass disk with a lead sulfide cell in the arrangement illustrated in Fig. 15-11. A glass disk was used because the... 

A neutralization of impurities is probably what takes place when brass and red brass are treated with sodium. The cleanser is usually introduced as a zinc-sodium master alloy. Zinc dissolves not more than 2.8% sodium at 557° C. and this alloy, when solid, is constituted of zinc-sodium compound in a zinc matrix. An action of sodium on sulfides, antimonides, and arsenides, even if these impurities were tied up with zinc, could be expected in these copper alloys. Sodium has been suggested as a desulfurizer for cast iron and shooting it into the metal bath has been proposed. In another proposition the sodium is weighed down with lead within an iron shell with a perforated bottom, which is lowered into the fused cast iron. Evidently sodium-lead alloy would perform as well. 

Photon detectors consist of a thin film of semiconductor material, such as lead sulfide, lead telluride, indium antimonide, or germanium doped with copper or mercury, deposited on a nonconducting glass and sealed into an evacuated envelope. Photon flux impinging on the semiconductor increases its conductivity. Lead-sulfide detectors are sensitive to radiation below about 3 fj.m in wavelength and have a response time of about 10 /nsec. Doped germanium detectors cooled to liquid-helium temperatures are sensitive to radiation up to about 120 jitm in wavelength, and have a response time of approximately 1 nsec. 

Indium Antimonide. Among the binary semiconductors, InSb has received extensive attention in the experimental and theoretical studies due to the complex transition mechanisms involved in its high-pressure behavior [165]. The traditional phase diagram in InSb [166] was substantially revised recently [167, 168]. Two high-pressure phases of InSb are the site-ordered orthorhombic Cmcm and Immm structures, the transition between which proceeds via an intermediate site-disordered orthorhombic phase with Imma symmetry [167]. At room temperature, the transition sequence in InSb depends on the pressurization rate. At slow loading, zincblende strucmre transforms into Cmcm at 2 GPa, whereas rapid loading rates lead to a direct zincblende Immm transition at 3 GPa [167]. The zincblende Cmcm transformation seems to be reversible and the phases other than zincblende have not been observed at ambient conditions in InSb. 

Also, for YbCuSb and YbAuSb a discrepancy occurs for the lattice parameters (Katoh et al. 1997, Merlo et al. 1990, Flandorfer et al. 1997), whatever the reason for this difference might be. Finally it is worthwhile to note that the three antimonides Yb(Cu,Ag,Au)Sb have the same electron count, but crystallize in two different structure types. Magnetic investigations (sect. 4.2) of these antimonides showed essentially divalent ytterbium, leading to the descriptions Yb +Cu+Sb etc. 

---