Indium tin oxide film

T. Nagamoto, Y. Maruta, and O. Omoto, Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility, Thin Solid Films, 192 17-25 (1990). 

Y. Wu, C.H.M. Maree, R.F. Haglund Jr., J.D. Hamilton, M.A. Morales Paliza, M.B. Huang, L.C. Feldman, and R.A. Weller, Resistivity and oxygen content of indium-tin oxide films deposited at room temperature by pulsed-laser ablation, J. Appl. Phys., 86 991-994 (1999). 

H.S. Kwok, X.W. Sun, and D.H. Kim, Pulsed laser deposited crystalline ultrathin indium tin oxide films and their conduction mechanisms, Thin Solid Films, 335 299-302, 1998. 

S. Honda, M. Watamori, and K. Oura, The effects of oxygen content on electrical and optical properties of indium tin oxide films fabricated by reactive sputtering, Thin Solid Films, 281-282 206-208, 1996. 

L.J. Meng and M.P. dos Santos, Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature, Thin Solid Films, 322 56-62, 1998. 

W.G. Haines and H.R. Bube, Effects of heat treatment on the optical and electrical properties of indium-tin oxide films, J. Appl. Phys., 49 304—307, 1978. 

K.R. Zhang, F.R. Zhu, C.H.A. Huan, and A.T.S. Wee, Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature, Thin Solid Films, 376 255-263, 2000. 

Chiou B.S., Hsieh S.-T., Wu W.-F. Deposition of indium tin oxide films on acrylic substrates by radio-frequency magnetron sputtering J. Am. Ceram. Soc. 1994 77 1740-44. 

Yao L., Hao S. and Wilkinson J.S. Indium tin oxide films by sequential evaporation Thin Solid Films 1990 189 227-33. 

Meng L.-J. and Dos Santos M. P., Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering,/. Vac. Sci. Technol. A18(4)(2000)pp. 1668-1671. 

Chiou B. S and Hsieh S. T., R. f magnetron-sputtered indium tin oxide film on a reactively ion-etched acrylic substrate, Thin Solid Films 229 (1993) pp. 146-148. 

These films can be used as a protective overcoat to increase the life of many other potentially useful coatings in different applications, for example, the soft Indium-Tin Oxide film used in photovoltaic applications, soft YBaCu Oj superconducting thin films, etc. provided the diamond like overcoat does not alter or influence the basic properties of the underlying soft coating. 

Evaluation of RF-Sputtered Indium-Tin Oxide Films for Photoelectrochemical Applications" (submitted to the Journal of the Electrochemical Society). 

For this type of optical coating application, indium tin oxide films, the so-called ITO films, in particular have achieved remarkable importance. 

FIGURE 3.1 Scanning electron microscopy (SEM) image of an ITO layer immersed in a 0.1-M HCl solution after a potential scan from 0.3 to 1.2 V (SCE). (Reprinted from Anodic corrosion of indium tin oxide films induced by the electrochemical oxidation of chlorides, 301, Eolcher, G. et al.. Thin Solid Films, 242-248, Copyright 1997, with permission from Elsevier.)... 

Folcher, G., H. Cachet, M. Froment, and J. Bruneaux. 1997. Anodic corrosion of indium tin oxide films induced by the electrochemical oxidation of chlorides. Thin Solid Films... 

Geoffroy C., Campet G., Portier J. (1991). Prep>aration and characterization of fluorinated indium tin oxide films prepjared by R.F. spnitteiing. Thin Solid Films, Vol. 202, pp. 77-82. 

In a development of the conventional electrochromic device structure, it has been proposed that the rear electrode, which is normally a transparent indium tin oxide film for transmission devices or a metallic film for reflective devices, be replaced by a semiconductor to enable a so-called photo-electrochromic device to be fabricated. In this device reduction can only be carried out on an n-doped electrode and oxidation on a p-type electrode. However, when the device is illuminated, minority charge carriers are generated, and both oxidation and reduction can be performed. This extra degree of freedom has led to the possibility of building a photo-electrochromic display or memory device [118]. 

The chemically deposited tin oxide suffers from two important disadvantages as compared to the vacuum-deposited indium-tin oxide. At the high temperatures necessary for the spray deposition process, soft glass loses its flatness. The different approaches previously listed for creating the indium-tin oxide films can all be performed at sufficiently low temperature that the soft glass substrates do not warp. In liquid-crystal displays, where a relatively narrow spacing between opposite electrodes is required, the loss in flatness caused by the spray process is a distinct drawback. 

Antimony-doped tin oxide can also be deposited by sputtering, but the sheet resistance is not as low as with sputtered indium-tin oxide. In addition, for the tin oxide concentrations normally used, the indium-tin oxide films can be readily etched in hydrochloric acid. Antimony-doped tin oxide films are not readily soluble in acids or bases, but they can be etched by a procedure using zinc dust and hydrochloric acid. ... 

Y.Q. Wang, T.P. Zhao, J. Liu, G.G. Qin, Near-ultraviolet and near-iirfrated electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure. AppL Phys. Lett. 74(25), 3815-3817 (1999)... 

Suzuki, A., Matsushita, T, Aoki, T. and Yoneyama, Y. (2001) Pulsed laser deposition of transparent conducting indium tin oxide films in magnetic field perpendicular to plume. Japanese Journal of Applied Physics, 40, L401. 

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