Indium oxide film

O. Marcovitch, Z. Klein, and I. Lubezky, Transparent conductive indium oxide films deposited on low temperature substrates by activated reactive evaporation, Appl. Opt., 28 2792-2795 (1989). 

Shigesato Y., Takaki S. and Haranoh T., Electrical and structural properties of low resistivity tin-doped indium oxide films, J. Appl. Phys. 71 (1992) pp. 3356-3364. 

Table 3-7. Growth conditions for indium oxide films prepared by CVD...

The results in Table 3-9 demonstrate, furthermore, that it is possible to grow fluorine and tin-doped indium oxide films with CVD techniques, which possess a high transmission of light (> 90%) and very low resistivities (< 1 mQcm). They are comparable to ITO films prepared by sputtering or other physical deposition techniques, which are generally used in industry these days. 

The data show that the peak intensity of (442) plane is relatively increased with respect to (222) plane, whereas there are no remarkable changes in the other peaks corresponding to (311) and (511) planes. Moreover, it is observed that the lattice constants of the ion implanted spinel magnesium indium oxide films are slightly higher than JCPDS standards and are increased with the irradiation doses. This may be due to the occupation of hydrogen ions in the vacant... 

The SEM microstructure of magnesium indium oxide films irradiated with H+ and Li+ ions to 10 ions cm" at room temperature is shown in Figure 9.8. 

Figure 9.13a shows the optical absorption spectra of magnesium indium oxide films implanted with 1.5 MeV H+ ions for various fluences lO -lO cm . The absorption spectrum of unirradiated... 

Similar to hydrogen ion implantation, spinel magnesium indium oxide films were irradiated with 1.5 MeV Li+ ions for various fluences and their optical absorption spectra are shown in Figure 9.14a. It is inferred that the absorption spectra have three features the slope from 300 to 350 nm, strong absorption at 365 nm, and broadband around 540 nm. The hump at 2.3 eV (540 nm) is ascribed to surface plasmon resonance of Li nanoparticles and the wide slope is due to the transitions from the lithium sublevels including widely spread defect bands. In comparison with the low fluence irradiated and as-deposited Aims, Mglu204 Alms implanted with LF ions at high fluence have... 

Semiconductor-Liquid Junction From Fundamentals to Solar Fuel Generating Structures, Fig. 11 Energy band scheme for a p-InP/indium oxide film/electrolyte junction note that the oxide conduction band is energetically located below the conduction band edge of InP... 

Kim YS, Ha S-C, Kim K, Yang H, Chcd S-Y, Kim YT (2005) Room-temperature semiconductor gas sensor based on nonstoichiometiic tungsten oxide nanorod film. Appl Phys Lett 86 213105 Kiriakidis G, Bender M, Katsarakis N, Gagaoudakis E, Hourdakis E, Doulofakis E, Cimalla V (2001) Ozone sensing properties of polycrystalline indium oxide films at room temperature. Physica Status Solid A Appl Res 185(1) 27-32... 

Imai H., Awazu K., Yasumori M., Onuki H., Hirashima H. Densification of sol-gel thin films by ultraviolet and vacuum ultraviolet irradiation. J. Sol-Gel Sci. Tech. 1997 8 365-369 Imai H., Tominaga A., Hirashima H., Aizawa M., Toki M. Ultraviolet-laser-induced crystallization of sol-gel derived indium oxide films. J. Sol-Gel Sci. Tech. 1998 13 994 Imai H., Tominaga A., Hirashima H., Toki M., Asakuma N. Ultraviolet-induced reduction and crystallization in indium oxide films. J. Appl. Phys. 1999 85 203-207 Kikuta K., Hirano S. Processing of ceramic fine patterns with excimer lamp. Cream. Trans. 1998 83 307-313... 

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