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Germanium carbides

Germanium carbide, GeC, produced by the reaction of acetylene and germane.1 1... [Pg.258]

Silicon (3), which resembles metals in its chemical behavior, generally has a valence of +4. In a few compounds it exhibits a +2 valence, and in silicides it exists as a negative ion and largely violates the normal valency rules. Silicon, carbon, germanium, tin, and lead comprise the Group 14 (IVA) elements. Silicon and carbon form the carbide, SiC (see Carbides). Silicon and germanium are isomorphous and thus mutually soluble in all proportions. Neither tin nor lead reacts with silicon. Molten silicon is immiscible in both molten tin and molten lead. [Pg.525]

Considerable interest in the sohd-state physics of sihcon carbide, that is, the relation between its semiconductor characteristics and crystal growth, has resulted from the expectation that SiC would be useflil as a high temperature-resistant semiconductor in devices such as point-contact diodes (148), rectifiers (149), and transistors (150,151) for use at temperatures above those where sihcon or germanium metals fail (see Semiconductors). [Pg.468]

Sfi.F-Test D.4A Write the formulas for (a) vanadium(V) oxide (b) calcium carbide (c) germanium tetrafluoride (d) dinitrogen trioxide. [Pg.59]

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. [Pg.352]

Boron oxides Germanium selenide Silicon carbide ... [Pg.384]

Germanes hydride, 2 76 reactivity of, 2 87 Germanium anionic cluster, 24 227 azides, preparation, 9 138 properties, 9 135-136, 139, 141 binary carbide not reported, 11 211 carbides, preparation of, 11 163 chalcogenide halides, 23 390 chlorides, mass spectra of, 18 248, 249 complexes, xenon fluoride reactions, 46 85 compounds, see also Organogermanium compounds... [Pg.113]

ELECTROLUMINESCENCE. Luminescence generated in crystals by electric fields or currents in the absence of bombardment or other means of excitation. It is a solid-state phenomenon involving />- and n-type semiconductors, and is observed in many crystalline substances, especially silicon carbide, zinc sulfide, and gallium arsenide, as well as in silicon, germanium, and diamond. [Pg.546]

Phillips and Timms [599] described a less general method. They converted germanium and silicon in alloys into hydrides and further into chlorides by contact with gold trichloride. They performed GC on a column packed with 13% of silicone 702 on Celite with the use of a gas-density balance for detection. Juvet and Fischer [600] developed a special reactor coupled directly to the chromatographic column, in which they fluorinated metals in alloys, carbides, oxides, sulphides and salts. In these samples, they determined quantitatively uranium, sulphur, selenium, technetium, tungsten, molybdenum, rhenium, silicon, boron, osmium, vanadium, iridium and platinum as fluorides. They performed the analysis on a PTFE column packed with 15% of Kel-F oil No. 10 on Chromosorb T. Prior to analysis the column was conditioned with fluorine and chlorine trifluoride in order to remove moisture and reactive organic compounds. The thermal conductivity detector was equipped with nickel-coated filaments resistant to corrosion with metal fluorides. Fig. 5.34 illustrates the analysis of tungsten, rhenium and osmium fluorides by this method. [Pg.192]

The discussed models of the carbon nanofilaments and nanotubes forma tion allow many other thermodynamic factors to be taken into consider ation, all of which affect the shape, texture, and growth rate of the nano objects under discussion (see, e.g.. Refs. [6, 7]). It is assumed that the forma tion of the fluidized active component of the catalyst nanoparticles due to its stationary oversaturation with the crystallizing component gives rise to the possibility to synthesize nanofilaments and nanotubes from not only carbon but also from different substances, such as silicon carbide (over catalysts capable of dissolving carbon and silicon simultaneously), germanium metal (over gold metal catalysts [8]), and so on. [Pg.295]

Table 2. Germanium-(Phosphorus, Arsenic)-Containing Metal Carbides ... Table 2. Germanium-(Phosphorus, Arsenic)-Containing Metal Carbides ...
Ignition or explosive reaction with metals (e.g., aluminum, antimony powder, bismuth powder, brass, calcium powder, copper, germanium, iron, manganese, potassium, tin, vanadium powder). Reaction with some metals requires moist CI2 or heat. Ignites with diethyl zinc (on contact), polyisobutylene (at 130°), metal acetylides, metal carbides, metal hydrides (e.g., potassium hydride, sodium hydride, copper hydride), metal phosphides (e.g., copper(II) phosphide), methane + oxygen, hydrazine, hydroxylamine, calcium nitride, nonmetals (e.g., boron, active carbon, silicon, phosphoms), nonmetal hydrides (e.g., arsine, phosphine, silane), steel (above 200° or as low as 50° when impurities are present), sulfides (e.g., arsenic disulfide, boron trisulfide, mercuric sulfide), trialkyl boranes. [Pg.315]

Germanium, Silicon Oxides, Silicon Nitrides, Silicon Carbides... [Pg.2135]


See other pages where Germanium carbides is mentioned: [Pg.264]    [Pg.466]    [Pg.557]    [Pg.293]    [Pg.471]    [Pg.471]    [Pg.264]    [Pg.466]    [Pg.557]    [Pg.293]    [Pg.471]    [Pg.471]    [Pg.525]    [Pg.521]    [Pg.362]    [Pg.455]    [Pg.197]    [Pg.223]    [Pg.7]    [Pg.376]    [Pg.291]    [Pg.178]    [Pg.191]    [Pg.185]    [Pg.521]    [Pg.633]    [Pg.27]    [Pg.120]    [Pg.337]    [Pg.304]    [Pg.546]    [Pg.494]    [Pg.1115]    [Pg.1124]    [Pg.286]    [Pg.2135]    [Pg.354]   
See also in sourсe #XX -- [ Pg.471 ]




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