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Contact point

Most authors who have studied the consohdation process of soflds in compression use the basic model of a porous medium having point contacts which yield a general equation of the mass-and-momentum balances. This must be supplemented by a model describing filtration and deformation properties. Probably the best model to date (ca 1996) uses two parameters to define characteristic behavior of suspensions (9). This model can be potentially appHed to sedimentation, thickening, cake filtration, and expression. [Pg.318]

Interface states played a key role in the development of transistors. The initial experiments at Bell Laboratories were on metal/insulator/semiconductor (MIS) stmctures in which the intent was to modulate the conductance of a germanium layer by applying a voltage to the metal plate. However, only - 10% of the induced charges were effective in charging the conductance (3). It was proposed (2) that the ineffective induced charges were trapped in surface states. Subsequent experiments on surface states led to the discovery of the point-contact transistor in 1948 (4). [Pg.348]

In addition to its use as a rectifier, the p—n junction (26) is the fundamental building block for bipolar, junction EFT (fFET), and MOSFET transistors. A thorough understanding of p—n junctions explains much of transistor behavior. The theory (5) of the p—n junction and its role in bipolar transistors was presented within a year of the discovery of the point-contact transistor. [Pg.348]

Considerable interest in the sohd-state physics of sihcon carbide, that is, the relation between its semiconductor characteristics and crystal growth, has resulted from the expectation that SiC would be useflil as a high temperature-resistant semiconductor in devices such as point-contact diodes (148), rectifiers (149), and transistors (150,151) for use at temperatures above those where sihcon or germanium metals fail (see Semiconductors). [Pg.468]

In a packed column, however, the situation is quite different and more complicated. Only point contact is made between particles and, consequently, the film of stationary phase is largely discontinuous. It follows that, as solute transfer between particles can only take place at the points of contact, diffusion will be severely impeded. In practice the throttling effect of the limited contact area between particles renders the dispersion due to diffusion in the stationary phase insignificant. This is true even in packed LC columns where the solute diffusivity in both phases are of the same order of magnitude. The negligible effect of dispersion due to diffusion in the stationary phase is also supported by experimental evidence which will be included later in the chapter. [Pg.250]

To reduce heat transfer by conduction, an insulant should have a small ratio of solid volume to void. Additionally, a thin-wall matrix, a discontinuous matrix or a matrix of elements with minimum point contacts are all beneficial in reducing conducted heat flow. A reduction in the conduction across the voids can be achieved by the use of inert gases rather than still air. [Pg.111]

Hamrock, B. J., and Dowson, D., Isothermal Elastohydrodynamic Lubrication of Point Contact Part I—Theoretical For-... [Pg.60]

The point contact thin him lubrication problem with micropolar fluids requires the simultaneous solution of several governing equations as described below. [Pg.68]

For a point contact problem, the local lubricant film thickness can be expressed as ... [Pg.69]

Fig. 2- Schematic contour plot of point-contact mixed lubrication zone. Fig. 2- Schematic contour plot of point-contact mixed lubrication zone.
Consider a distributed pressure acting on an elastic halfspace, and let the pressure distribution and the normal surface deformation be denoted hy p(x) and v x) for line contacts, or hypix, y) and v(x, y) for point contacts, respectively. According to the theory of contact mechanics [18], the normal surface deformation v(x) or v x,y) caused by a distributed pressure may be written in the forms of... [Pg.122]

For simplicity, the following discussion will be limited to the line contact problems only, and it can be easily extended to the point contact problems. [Pg.122]

Fig. 6 —Result comparison for smooth surface in point contact EHL (a) Venner s result [40] (b) Holmes result [41] and (c) present model. Fig. 6 —Result comparison for smooth surface in point contact EHL (a) Venner s result [40] (b) Holmes result [41] and (c) present model.
TABLE 3—Comparison of film thickness for smooth surface in point contact EHL. ... [Pg.126]

To examine the effects of height distribution on mixed lubrication, rough surfaces with the same exponential autocorrelation function but different combinations of skewness and kurtosis have been generated, following the procedure described in the previous section. Simulations were performed for the point contact problem with geometric parameters of... [Pg.133]

Fig. 26—Amplitude ratio for line contacts ( , 0, O) and point contacts ( , , ), taken from Ref. [59], (a) Transversal roughness (b) isotropic roughness and (c) longitudinal roughness. Fig. 26—Amplitude ratio for line contacts ( , 0, O) and point contacts ( , , ), taken from Ref. [59], (a) Transversal roughness (b) isotropic roughness and (c) longitudinal roughness.

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See also in sourсe #XX -- [ Pg.80 , Pg.81 , Pg.84 , Pg.85 , Pg.88 , Pg.89 ]

See also in sourсe #XX -- [ Pg.567 ]




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Contact four-point probe technique

Contact point jumps

Dew point of gases in contact with

Elastohydrodynamic Solutions for Point Contact

Hard point contact

Membrane contact point

Micrometer point contact

Microscopic points of contact

Number of contact points

Point contact rectifier

Point force contacts

Point of contact

Point-contact spectroscopy

Points Lipophilic Contacts and Charge-transfer Interactions

Primary Contact Point

Quantum point contacts

Secondary Contact Points

Single Point Contact of Planar Bodies

The three-point contact model

Three-point contact model

Transistor first point contact

Transistor point-contact

Twinning contact point

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