Fermi level electrode reactions

It follows from the Franck-Condon principle that in electrochemical redox reactions at metal electrodes, practically only the electrons residing at the highest occupied level of the metal s valence band are involved (i.e., the electrons at the Fermi level). At semiconductor electrodes, the electrons from the bottom of the condnc-tion band or holes from the top of the valence band are involved in the reactions. Under equilibrium conditions, the electrochemical potential of these carriers is eqnal to the electrochemical potential of the electrons in the solution. Hence, mntnal exchange of electrons (an exchange cnrrent) is realized between levels having the same energies. 

When a net current flows and the electrode s polarization is AE, its Fermi level is shifted hy Q°AE relative to level down in the case of anodic polarization, and up in the case of cathodic polarization. The higher the electrode s catalytic activity toward a given reaction, the lower wiU be the polarization at a given current density, and the smaller will be the shift. 

Because of the excess holes with an energy lower than the Fermi level that are present at the n-type semiconductor surface in contact with the solution, electron ttansitions from the solution to the semiconductor electrode are facilitated ( egress of holes from the electrode to the reacting species ), and anodic photocurrents arise. Such currents do not arise merely from an acceleration of reactions which, at the particular potential, will also occur in the dark. According to Eq. (29.6), the electrochemical potential, corresponds to a more positive value of electrode potential (E ) than that which actually exists (E). Hence, anodic reactions can occur at the electrode even with redox systems having an equilibrium potential more positive than E (between E and E ) (i.e., reactions that are prohibited in the dark). 

The electrons produced in the conduction band as a result of illumination can participate in cathodic reactions. However, since in n-type semiconductors the quasi-Fermi level is just slightly above the Fermi level, the excited electrons participating in a cathodic reaction will almost not increase the energy effect of the reaction. Their concentration close to the actual surface is low hence, it will be advantageous to link the n-type semiconductor electrode to another electrode which is metallic, and not illuminated, and to allow the cathodic reaction to occur at this electrode. It is necessary, then, that the auxiliary metal electrode have good catalytic activity toward the cathodic reaction. 

The band edges are flattened when the anode is illuminated, the Fermi level rises, and the electrode potential shifts in the negative direction. As a result, a potential difference which amounts to about 0.6 to 0.8 V develops between the semiconductor and metal electrode. When the external circuit is closed over some load R, the electrons produced by illumination in the conduction band of the semiconductor electrode will flow through the external circuit to the metal electrode, where they are consumed in the cathodic reaction. Holes from the valence band of the semiconductor electrode at the same time are directly absorbed by the anodic reaction. Therefore, a steady electrical current arises in the system, and the energy of this current can be utilized in the external circuit. In such devices, the solar-to-electrical energy conversion efficiency is as high as 5 to 10%. Unfortunately, their operating life is restricted by the low corrosion resistance of semiconductor electrodes. 

These ideas can be applied to electrochemical reactions, treating the electrode as one of the reacting partners. There is, however, an important difference electrodes are electronic conductors and do not posses discrete electronic levels but electronic bands. In particular, metal electrodes, to which we restrict our subsequent treatment, have a wide band of states near the Fermi level. Thus, a model Hamiltonian for electron transfer must contains terms for an electronic level on the reactant, a band of states on the metal, and interaction terms. It can be conveniently written in second quantized form, as was first proposed by one of the authors [Schmickler, 1986] ... 

In addition to the stoichiometry of the anodic oxide the knowledge about electronic and band structure properties is of importance for the understanding of electrochemical reactions and in situ optical data. As has been described above, valence band spectroscopy, preferably performed using UPS, provides information about the distribution of the density of electronic states close to the Fermi level and about the position of the valence band with respect to the Fermi level in the case of semiconductors. The UPS data for an anodic oxide film on a gold electrode in Fig. 17 clearly proves the semiconducting properties of the oxide with a band gap of roughly 1.6 eV (assuming n-type behaviour). 

In this chapter we introduce and discuss a number of concepts that are commonly used in the electrochemical literature and in the remainder of this book. In particular we will illuminate the relation of electrochemical concepts to those used in related disciplines. Electrochemistry has much in common with surface science, which is the study of solid surfaces in contact with a gas phase or, more commonly, with ultra-high vacuum (uhv). A number of surface science techniques has been applied to electrochemical interfaces with great success. Conversely, surface scientists have become attracted to electrochemistry because the electrode charge (or equivalently the potential) is a useful variable which cannot be well controlled for surfaces in uhv. This has led to a laudable attempt to use similar terminologies for these two related sciences, and to introduce the concepts of the absolute scale of electrochemical potentials and the Fermi level of a redox reaction into electrochemistry. Unfortunately, there is some confusion of these terms in the literature, even though they are quite simple. 

The standard electrode potential [1] of an electrochemical reaction is commonly measured with respect to the standard hydrogen electrode (SHE) [2], and the corresponding values have been compiled in tables. The choice of this reference is completely arbitrary, and it is natural to look for an absolute standard such as the vacuum level, which is commonly used in other branches of physics and chemistry. To see how this can be done, let us first consider two metals, I and II, of different chemical composition and different work functions 4>i and 4>ii-When the two metals are brought into contact, their Fermi levels must become equal. Hence electrons flow from the metal with the lower work function to that with the higher one, so that a small dipole layer is established at the contact, which gives rise to a difference in the outer potentials of the two phases (see Fig. 2.2). No work is required to transfer an electron from metal I to metal II, since the two systems are in equilibrium. This enables us calculate the outer potential difference between the two metals in the following way. We first take an electron from the Fermi level Ep of metal I to a point in the vacuum just outside metal I. The work required for this is the work function i of metal I. 

There is a fundamental difference between electron-transfer reactions on metals and on semiconductors. On metals the variation of the electrode potential causes a corresponding change in the molar Gibbs energy of the reaction. Due to the comparatively low conductivity of semiconductors, the positions of the band edges at the semiconductor surface do not change with respect to the solution as the potential is varied. However, the relative position of the Fermi level in the semiconductor is changed, and so are the densities of electrons and holes on the metal surface. 

When electron transfer is forced to take place at a large distance from the electrode by means of an appropriate spacer, the reaction quickly falls within the nonadiabatic limit. H is then a strongly decreasing function of distance. Several models predict an exponential decrease of H with distance with a coefficient on the order of 1 A-1.39 The version of the Marcus-Hush model presented so far is simplified in the sense that it assumed that only the electronic states of the electrode of energy close or equal to the Fermi level are involved in the reaction.31 What are the changes in the model predictions brought about by taking into account that all electrode electronic states are actually involved is the question that is examined now. The kinetics... 

It was suggested that the absence of an inverted region for the ET reactions at spacer-covered metal electrodes is due to the availabihty of a continuum of electronic states in metal electrodes below the Fermi level. For the same reason, the inverted region is also not expected to be seen for the homogeneous intermolecular ET reactions because a continuum of electronic states are also available below and above the respective ground states of acceptor and donor ions in solutions involved in homogeneous ET reactions. 

Rose and Benjamin (see also Halley and Hautman ) utilized molecular dynamic simulations to compute the free energy function for an electron transfer reaction, Fe (aq) + e Fe (aq) at an electrodesolution interface. In this treatment, Fe (aq) in water is considered to be fixed next to a metal electrode. In this tight-binding approximation, the electron transfer is viewed as a transition between two states, Y yand Pf. In Pj, the electron is at the Fermi level of the metal and the water is in equilibrium with the Fe ion. In Pf, the electron is localized on the ion, and the water is in equilibrium with the Fe" ions. The initial state Hamiltonian H, is expressed as... 

Since the electron state density near the Fermi level at the degenerated surface (Fermi level pinning) is so high as to be comparable with that of metals, the Fermi level pinning at the surface state, at the conduction band, or at the valence band, is often called the quasi-metallization of semiconductor surfaces. As is described in Chap. 8, the quasi-metallized surface occasionally plays an important role in semiconductor electrode reactions. 

Fig. 2-43. Energy balance in the reaction of normal hydrogen electrode H2(sid.p>j = hydrogen molecule in the gaseous standard state (at 1 atm) H( gro. i) = hydrated proton of unit activity = real potential of the hydrated proton of unit activity a.ajHE) = real potential of the equilibrium electron of NHE (= Fermi level cpcnhe) of NHE).

The energy balance in the foregoing reaction cyde gives the real potential a<(NHE) of the equilibrium redox electron in the reaction of normal hydrogen electrode as shown in Fig. 2-44 represents the Fermi level croniB) of the... 

Figure 5-64 shows the band edge potential for compound semiconductor electrodes in aqueous solutions, in which the standard redox potentials (the Fermi levels) of some hydrated redox particles are also shown on the right hand side. In studying reaction kinetics of redox electron transfer at semiconductor electrodes, it is important to find the relationship between the band edge level (the band edge potential) and the Fermi level of redox electrons (the redox potential) as is described in Chap. 8. 

Figure 8-1 shows the potential energy barrier for the transfer reaction of redox electrons across the interface of metal electrode. On the side of metal electrode, an allowed electron energy band is occupied by electrons up to the Fermi level and vacant for electrons above the Fermi level. On the side of hydrated redox particles, the reductant particle RED is occupied by electrons in its highest occupied molecular orbital (HOMO) and the oxidant particle OX, is vacant for electrons in its lowest imoccupied molecular orbital (LUMO). As is described in Sec. 2.10, the highest occupied electron level (HOMO) of reductants and the lowest unoccupied electron level (LUMO) of oxidants are formed by the Franck-Condon level sphtting of the same frontier oihital of the redox particles... 

In equilibrium of redox reactions, the Fermi level of the electrode equals the Fermi level of the redox particles (ckm) = panodic reaction current equals, but in the opposite direction, the cathodic reaction current (io = io = io). It follows from the principle of micro-reversibility that the forward and backward reaction currents equal each other not only as a whole current but also as a differential current at constant energy level e io(e) = tS(e) = io(e). Referring to Eqns. 8-7 and 8-8, we then obtain the exchange reaction ciurent as shown in Eqn. 8-18 ... 

As the electrode potential is polarized fh>m the equilibritun potential of the redox reaction, the Fermi level efcid of electrons in the metal electrode is shifted from the Fermi level erredox) of redox electrons in the redox reaction by an energy equivalent to the overvoltage t) as expressed in Eqn. 8-24 ... 

Figures 8-5 and 8-6 are energy diagrams, as functions of electron energy e imder anodic and cathodic polarization, respectively, for the electron state density Dyf.t) in the metal electrode the electron state density AtEDox(c) in the redox particles and the differential reaction current ((e). From these figures it is revealed that most of the reaction current of redox electron transfer occurs in a narrow range of energy centered at the Fermi level of metal electrode even in the state of polarization. Further, polarization of the electrode potential causes the ratio to change between the occupied electron state density Dazc/itnu md the imoccupied...

It is characteristic of metal electrodes that the reaction current of redox electron transfer, under the anodic and cathodic polarization conditions, occurs mostly at the Fermi level of metal electrodes rather than at the Fermi level of redox particles. In contrast to metal electrodes, as is discussed in Sec. 8.2, semiconductor electrodes exhibit no electron transfer current at the Fermi level of the electrodes. 

Fig. 8-16. Electron state density for a redox electron transfer reaction of h3rdrated redox particles at semiconductor electrodes (a) in the state of band edge level pinning and (b) in the state of Fermi level pinning dashed curve = band edge levels in reaction equilibrium solid curve = band edge levels in anodic polarization e p,sq = Fermi level of electrode in anodic polarization e v and c c = band edge levels in anodic polarization.

In eqxiilibrium of electron transfer, the Fermi level of an electrode equals the Fermi level of the redox particles (eksc) = erredox)) the forward reaction current equals the backward reaction current, which both equal the exchange reaction current to. Further, the exchange current is the sum of the conduction band current, and the valence band current, ip,o (io = in.o + tp,o)- The exchange currents t o and ij, are given, respectively, by Eqns. 8-48 and 8—49 ... 

It follows from Eqn. 8-53 that the ratio of participation of the conduction band to the valence band in the exchange reaction current depends on the standard Fermi level of the redox electrons relative to the middle level in the band gap at the interface of semiconductor electrode. 

Figures 8-16 and 8-17 show the state density ZXe) and the exchange reaction current io( ) as functions of electron energy level in two different cases of the transfer reaction of redox electrons in equilibrium. In one case in which the Fermi level of redox electrons cnxEDax) is close to the conduction band edge (Fig. 8-16), the conduction band mechanism predominates over the valence band mechanism in reaction equilibrium because the Fermi level of electrode ensa (= nREDOK)) at the interface, which is also dose to the conduction band edge, generates a higher concentration of interfadal electrons in the conduction band than interfadal holes in the valence band. In the other case in which the Fermi level of redox electrons is dose to the valence band edge (Fig. 8-17), the valence band mechanism predominates over the conduction band mechanism because the valence band holes cue much more concentrated than the conduction band electrons at the electrode interface.

From these illustrations it follows, in general, that Ihe transfer reaction of redox electrons at semiconductor electrodes occurs via the conduction band mechanism if its equilibrium potential is relatively low (high in the Fermi level of redox electrons) whereas, the transfer reaction of redox electrons proceeds via the valence band mechanism if the equilibriiun redox potential is high (low in the Fermi level of redox electrons). 

Fig. 8-16. Electron state density in a semiconductor electrode and in hjrdrated redox partides, rate constant of electron tunneling, and exchange redox current in equilibrium with a redox electron transfer reaction for which the Fermi level is close to the conduction band edge eF(sc) = Fermi level of intrinsic semiconductor at the flat band potential 1. 0 (tp.o) = exchange reaction current of electrons (holes) (hvp)) - tunneling rate constant of electrons (holes).

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