Etchants

A fonn of anisotropic etching that is of some importance is that of orientation-dependent etching, where one particular crystal face is etched at a faster rate than another crystal face. A connnonly used orientation-dependent wet etch for silicon surfaces is a mixture of KOH in water and isopropanol. At approximately 350 K, this etchant has an etch rate of 0.6 pm min for the Si(lOO) plane, 0.1 pm min for the Si(l 10) plane and 0.006 pm miiG for the Si(l 11) plane [24]. These different etch rates can be exploited to yield anisotropically etched surfaces. 

Dry etching is a commonly used teclmique for creating highly anisotropic, patterned surfaces. The interaction of gas phase etchants with surfaces is of fundamental interest to understanding such phenomena as undercutting and the dependence of etch rate on surface structure. Many surface science studies aim to understand these interactions at an atomic level, and the next section will explore what is known about the etching of silicon surfaces. 

On the atomic level, etching is composed of several steps diflfiision of the etch molecules to the surface, adsorption to the surface, subsequent reaction with the surface and, finally, removal of the reaction products. The third step, that of reaction between the etchant and the surface, is of considerable interest to the understanding of surface reactions on an atomic scale. In recent years, STM has given considerable insight into the nature of etching reactions at surfaces. The following discussion will focus on the etching of silicon surfaces [28]. 

The method of molecular dynamics (MD), described earlier in this book, is a powerful approach for simulating the dynamics and predicting the rates of chemical reactions. In the MD approach most commonly used, the potential of interaction is specified between atoms participating in the reaction, and the time evolution of their positions is obtained by solving Hamilton s equations for the classical motions of the nuclei. Because MD simulations of etching reactions must include a significant number of atoms from the substrate as well as the gaseous etchant species, the calculations become computationally intensive, and the time scale of the simulation is limited to the... 

Chlorine ttifluoride is utilized in the processing of nuclear fuels to convert uranium to gaseous uranium hexafluoride. Chlorine ttifluoride has also been used as a low temperature etchant for single-crystalline siHcon (122,123). 

A small but significant use for aqueous HF is in the electronics industry (see Electronic materials). Aqueous HE (typically 49%) of extremely high purity is used as an etchant for sihcon wafers (see Ultrapurematerials). 

Concentrated waste solutions are obtained from spent metal plating baths and etchants. However, the majority of metal wastes are soflds or sludges obtained from the hydrolysis of metal-bearing solutions and industrial process effluents. Most of these water-insoluble wastes are composed of hydroxides or basic salts of the contained metals. Eor processing by hydrometallurgical routes the materials must be brought into solution usually by acid or ammoniacal or alkaline digestion. 

The high purity required of sificon and the small size of semiconductor devices place stringent limits on the chemicals used in processing sificon. By far the most important chemical is water which is used extensively to dilute etchants and clean wafers. Pure water (24) is required to have fewer than 0.025... 

Most molded plastics have a very smooth, hydrophobic surface that must be modified. Chemical etchants are used to oxidize and roughen the surface. The resultant hydrophilic surface promotes good metal-to-plastic adhesion. The etchant is usually a solution of chromic acid and sulfuric acid pure chromic acid can also be used. 

Copper etchants do not directly influence the electroless plating process, but are used merely to remove unwanted copper, and should not affect the deposit properties. The costs of waste treatment and disposal have led to disuse of throw-away systems such as chromic—sulfuric acid, ferric chloride, and ammonium persulfate. Newer types of regenerable etchants include cupric chloride, stabilized peroxide, and proprietary ammoniacal etchant baths. 

Union Carbide Corp. Parylene conformal coatings, photoresists, developers, etchants, solder masks, potting compounds... 

Although there is considerable evidence that chemical surface treatments improve the substrate bondability of stainless steels, there is no general agreement on which is the best. One etchant commonly used with stainless steels is an HNO3-HF mixture [128-131] others are chromic acid and ferric chloride/hydrochloric... 

Phosphoric acid anodizing AMPS-sulfuric acid etchant 11.8 23.5... 

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