Silicon etchants, comparison

HNA (HF + HNO3 + Acetic Acid) Alkali-OH Comparison of Example Bulk Silicon Etchants EDP TMAH XeFj (ethylene (tetramethyl-diamine ammonium pyrochate- hydroxide) chol) Sp0 Plasma DRIE (Deep Reactive Ion Etch)... 

A representative sample of terpolymers was exposed to a variety of etchants for polysilicon and silicon dioxide, and the results are given in Table V. The ratio of the etch rate of the substrate to the etch rate of the resist must be at least 2 1 for the resist to be a viable etch mask. Inspection of Table V, shows that the materials examined are unacceptable for only the QFj — CF3CI (4 1) plasma. The etch rates are comparable to those for PMMA the a-keto-oxime exhibits essentially no effect on that rate and the nitrile affords a slight decrease in the plasma etch rate. The etch rates of some commercially available materials are shown for comparison. 

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