Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Confined etchant layer technique

ZW Tian, ZD Fen, ZQ Tian, XD Zhuo, JQ Mu, CZ Li, HS Lin, B Ren, ZX Xie, WL Hu. Confined etchant layer technique for 2-dimensional lithography at high resolution using electrochemical scanning-tunneling-microscopy. Faraday Discuss 94 37-44, 1992. [Pg.516]

Such confined etchant layer technique has been applied to achieve effective three-dimensional (3D) micromachining on n-GaAs and p-Si. It operates via an indirect electrochemical process and is a maskless, low-cost technique for microfabrication of arbitrary 3D structures in a single step [109]. It has also been presented that free-standing Si quantum wire arrays can be fabricated without the use of epitaxial deposition or lithography... [Pg.16]

Zhang L, Ma XZ, Lin MX, Lin Y, Cao GH, Tang J, Tian ZW (2006) A comparative study on electrochemical micromachining of n-GaAs and p-Si by using confined etchant layer technique. J Phys Chem B 110 18432-18439... [Pg.636]

D-Electrochemical Nanomachining. Electrochemistry nanomachining plays an important role in the industrial manufacture domains such as ULSI, MEMS, p-TAS and modern optics. Prof. Zhao-Wu Tian at Xiamen University proposed the confined etchant layer technique ... [Pg.299]

See other pages where Confined etchant layer technique is mentioned: [Pg.485]    [Pg.611]    [Pg.481]    [Pg.1488]    [Pg.521]    [Pg.297]    [Pg.374]    [Pg.507]    [Pg.485]    [Pg.611]    [Pg.481]    [Pg.1488]    [Pg.521]    [Pg.297]    [Pg.374]    [Pg.507]    [Pg.300]   
See also in sourсe #XX -- [ Pg.521 ]



SEARCH



Confining layer

Etchants

Layer technique

© 2024 chempedia.info