Electronic compound semiconductor devices

The applications of semiconductors materials are discussed in Volume 2. The various topics on semiconductor devices include Si/GeSi heterostructures for Si-based nanoelectronics, impact ionization in compound semiconductor devices, quantum dot optoelectronic devices, failure mechanisms in compound semiconductors, electron devices, semiconductor quantum materials and their applications in electronics and optoelectronics, and photoelectromotive force effects in semiconductors. 

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

The main advantages that compound semiconductor electronic devices hold over their siUcon counterparts He in the properties of electron transport, excellent heterojunction capabiUties, and semi-insulating substrates, which can help minimise parasitic capacitances that can negatively impact device performance. The abiUty to integrate materials with different band gaps and electronic properties by epitaxy has made it possible to develop advanced devices in compound semiconductors. The hole transport in compound semiconductors is poorer and more similar to siUcon. Eor this reason the majority of products and research has been in n-ty e or electron-based devices. 

The greatest potential appHcation for single-electron devices Hes in digital circuits. However, a number of other appHcations exist, including current standards and ultrasensitive electrometers (70,71). SETs are not unique to compound semiconductors, and in fact a great deal of work has been carried out in other material systems, including Al—AlO —A1 tunnel junctions. A review of single-electron phenomena is available (72). 

The creation of nanoscale sandwiches of compound semiconductor heterostructures, with gradients of chemical composition that are precisely sculpted, could produce quantum wells with appropriate properties. One can eventually think of a combined device that incorporates logic, storage, and communication for computing—based on a combination of electronic, spintronic, photonic, and optical technologies. Precise production and integrated use of many different materials will be a hallmark of future advanced device technology. 

Polycrystalline GaN UV detectors have been realized with 15% quantum efficiency [4], This is about 1 /4 of the quantum efficiency obtained by crystalline devices. Available at a fixed price, however, their increased detection range may well compensate their lack in sensitivity. Furthermore, new semiconductor materials with a matching band gap appear as promising candidates for UV detection if the presumption of the crystallinity is given up. Titanium dioxide, zinc sulfide and zinc oxide have to be mentioned. The opto-electronic properties and also low-cost production processes for these compound semiconductors have already been investigated to some extent for solar cell applications [5]. 

Transferred electron devices (TEDs), compound semiconductors in,... 

A.2 Semiconductor Device Fabrication. In this section we investigate the gas-phase synthesis of compounds, primarily semiconductors, that are preferentially deposited on a surface to form a layer called a thin film. This technology can be used to form structural and protective layers of materials described in the previous section, but is used primarily to form thin films from semiconductor materials for electronic devices. Recall from Figure 6.99, for example, that most semiconductor devices are made from layers of appropriately doped compounds. In order to fabricate these devices at ever smaller scales, the layers must be formed in a carefully controlled manner. This... 

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