Lithography extreme ultraviolet

On the other hand, there are no lens distortions or feature-size-dependent pattern-placement errors associated with x-ray lithography since there are no lenses involved. This implies that a significant portion of the overlay budget can be allocated to the mask in x-ray lithography.  

Projection soft x-ray lithography, also called EUV lithography, was invented independently in the 1980s by research teams at NTT in Japan and at Bell Laboratories in the United States,who were inspired by the availability of mirrors of reasonable efficiency at soft x-ray wavelengths (X. 4-40 nm). Summarized 

Levinson, Principles of Lithography, 2nd ed., p. 376, SPIE Press, Bellingham, WA (2005). ibid., p. 367. 

Kinoshita, T. Kaneko, H. Takei, N. Takeuchi, and S. Ishihara, Study on x ray reduction projec tion lithography, Proc. of 47th Autumn Meeting of the Japan Soc. ofAppl. P/iyi ., PaperNo. 28 ZE 15 (1986) H. Kinoshita, K. Kurihara, Y. Ishii, and Y. Torii, Soft x ray reduction lithography using mul tilayer mirrors, J. Vac. Sci. Technol. B 7, 1648 (1989) T. Namioka, Current research activities in the field of multilayer for soft x rays in Japan, Revue Phys. Appl. 23, 1711 1726 (1988). 

There are no reasonably EUV-transmissive refractive materials that can be used in EUV optics. Instead, most naturally occurring materials reflect only a very small fraction of the incident EUV photons, and tend to absorb most of 

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Extrapolating properties, defined, 16 729 Extra spring copper alloys, 7 723t Extreme ambient conditions, lubrication and, 15 252-256 Extreme-case analysis, 9 547 Extreme environments, solid and liquid lubricants for, 15 256 Extremely low toxic substances, 23 113 Extreme pressure (EP) lubrication regime, 15 214. See also EP entries Extreme purity gases, analyses of, 13 468 Extreme ultraviolet lithography, 15 189-191... 

B.V. Yakshinksiy, R. Wasielewski, E. Loginivoa, M.N. Hedhili, and T.E. Madey, DIET pro cesses on ruthenium surfaces related to extreme ultraviolet lithography, Surf. Sci. 602(20), 3220... 

La Fontaine, EUV optics, in Extreme Ultraviolet Lithography, B. Wu, A. Kumar, Eds., Chapter 4, McGraw Hill, New York (2009). 

Montcalm, S. Bajt, P.B. Mirkarimi, E. Spiller, F.J. Weber, and J.A. Folta, Multilayer reflective coatings for extreme ultraviolet lithography, Proc. SPIE 3331, 42 51 (1998). 

B.J. Lin, Sober view on extreme ultraviolet lithography, J. Microlith., Microfab., Microsyst. 5, 033005 (2006). 

Hollenshead and L. Klehanoff, Modeling extreme ultraviolet/H20 oxidation of ruthenium optic coatings, J. Vac. Sci. Technol. B 24,118 130 (2006) Y. Gomei, H. Takase, T. Aoki, Y. Kakutani, and M. Niihe, Scaling law in acceleration test of extreme ultraviolet lithography projection optics mirror contamination, J. Vac. Sci. Technol. B 23, 2848 2851 (2005) A.N. Broers, W.W. Molzen, J.J. Cuomo, N.D. Wittels, Electron beam fabrication of 80A metal structures, Appl. Phys. Lett. 29, 596 598 (1976). 

Mizutani, U., Yamaguchi, T., Ikuta, H. et al. 2008. Eabrication of Mo/Si multilayer mirrors for extreme ultraviolet lithography by means of superconducting bulk magnet magnetron sputtering. Physica C Superconductivity 468 1456-1460. 

Roberts, J., Bacuita, T., Bristol, R. L. et al. 2006. Exposing extreme ultraviolet lithography at Intel. 

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