Direct-current magnetron

Ishibashi S., Higuchi Y., Ola Y. and Nakamura K. Low resistivity indium tin oxide transparent conductive films. I. Effect of introducing H2O gas of H2 gas during direct current magnetron sputtering. J. Vac. Soc. Technol, 1989 AS 3-6. 

Figure 10.1 Schematic representation of the two-target direct current magnetron sputtering...

Figure 10.12 Escherichia coli inactivation on co-sputtered direct current magnetron sputtering (pulsed) at different times using simultaneously an Ag and Zr target in Ar-10% N2 0.5 Pa atm. Current 300 mA.

In addition to microwave plasma, direct current (dc) plasma [19], hot-filament [20], magnetron sputtering [21], and radiofrequency (rf) [22-24] plasmas were utilized for nanocrystalline diamond deposition. Amaratunga et al. [23, 24], using CH4/Ar rf plasma, reported that single-crystal diffraction patterns obtained from nanocrystalline diamond grains all show 111 twinning. 

Can the anode magnetron be used in the precleaning process of the metallic substrate that is used as the cathode in the cathodic plasma polymerization In a more broad sense, can the surface of metal (cathode) be cleaned by argon direct current (DC) discharge sputtering ... 

Utilize direct current (DC) magnetron sputter-deposited multi-component catalyst layers. 

Cold Cathode Direct Current (dc) Diode (Non-magnetron) Sputtering... 

The C.P.D. is obtained directly by the magnetron and the capacitor (or Kelvin) methods. Other methods which have proved successful rely on the variation of anode potential in a diode with constant cathode conditions. In this case, since adsorption changes the effective anode potential, the applied potential necessary to restore the anode current to its original value is equal to the C.P.D. between the two surfaces. As considered in Sec. II, a true average work function is measured in the C.P.D. method when the two conductors are separated by a distance which is much greater than the size of the patches on the surface. These conditions are invariably fulfilled in the capacitor and the space-charge-limited diode methods. 

The charge carrier density in the magnetron plasma was measured by Langmuir probe measurements [61]. As an example, in Fig. 12 the distribution of the charge carrier density is presented which had been measured 10 mm in front of the substrate. Because the charge carrier density at the plasma sheath is directly related to the ion current towards the substrate (see below), the inhomogeneity visible in Fig. 12 will be reproduced in the ion flux towards the substrate, that is, the ion... 

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