Dielectric, constant layer

Frequently, e.g. in the case of alkane thiol monolayers, the electrode is modified with a low-dielectric-constant layer. Film formation causes the Helmholtz layer to change from a mixture of ions and solvent with a high dielectric constant to an ion-free, often organic, layer with a low dielectric constant. The interfacial capacitance... 

The proposed appUcatirms of aerogel are numerous and vary a great deal yet most remain uiu ealized. Commercial applications such as thermal window insulatirHi, acoustic insulation, optical coatings, capacitor electrodes, low dielectric constant layers in integrated circuits, piezoelectric transducers, and catalytic supports have all been proposed, but little in the way of actual use has resulted [1, 5-11]. However, sihca aerogel monohths have been used extensively in Cerenkov radiation detectors in high-energy physics experiments [12-16]. 

T. Hara, T. Toniisawa, T. Kurosu, T.K. Doy, Chemical mechanical polishing of poly-arylether low dielectric constant layers by manganese oxide slurry, J. Electrochem. Soc. 146 (1999) 2333-2336. 

Here a few core equations are presented from tire simplest tlieory for tire electric double layer tire Gouy-Chapman tlieory [41]. We consider a solution of ions of valency and z in a medium witli dielectric constant t. The ions... 

The 2eta potential (Fig. 8) is essentially the potential that can be measured at the surface of shear that forms if the sohd was to be moved relative to the surrounding ionic medium. Techniques for the measurement of the 2eta potentials of particles of various si2es are collectively known as electrokinetic potential measurement methods and include microelectrophoresis, streaming potential, sedimentation potential, and electro osmosis (19). A numerical value for 2eta potential from microelectrophoresis can be obtained to a first approximation from equation 2, where Tf = viscosity of the liquid, e = dielectric constant of the medium within the electrical double layer, = electrophoretic velocity, and E = electric field. 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

There is also growing iaterest ia thin-film dielectric capacitors. For example, through the use of processiag techniques such as sol—gel solution deposition, thin (--- 0.25 fim) ceramic layers having dielectric constants ranging from 500 to 2000 ia the PZT, Pb(Zr,Ti)03, and PMN—PT, Pb(Mn2 3Nb2 3)03-PbTi03, compositional families respectively, have been prepared (3). 

Mobility is affected by the dielectric constant and viscosity of the suspending fluid, as indicated in Eq. (22-28). The ionic strength of the fluid has a strong effect on the thickness of the double layer and hence on As a rule, mobility varies inversely as the square root of ionic strength [Overbeek, Adv. Colloid Sci., 3, 97 (1950)b... 

Tafel slope (Napieran loop) transfer coefficient diffusion layer thickness dielectric constant, relative electric field constant = 8.85 x 10 F cm overvoltage, polarization ohmic voltage drop, resistance polarization specific conductance, conductivity electrochemical potential of material X,... 

Dielectric constant The dielectric constant of anodic oxide films has been found to be 5-0-5-9 for sulphuric films, and 7-8 for oxalic films. A mean value of 7-45 has been quoted for barrier-layer films, but more recent work favours a value of 8-7 . 

Figure 6-12. Model for Ihe Calculation of the van der Waals potential experienced by a single T6 molecule on a Tfi ordered surface. Each molecule is modeled as a chain of 6 polarizable spherical units, and the surface as 8-laycr slab, each layer containing 266 molecules (only pan of the cluster is shown). Tire model is based on X-ray diffraction and dielectric constant experimental data. The two configurations used for evaluating the corrugation of the surface potential are shown. Adapted with permission front Ref. [48].

A macroscopic model for regular air/solution interfaces has been proposed by Koczorowski et al 1 The model is based on the Helmholtz formula for dipole layers using macroscopic quantities such as dielectric constants and dipole moments. The model quantitatively reproduces Ax values [Eq. (37)], but it needs improvement to account for lateral interaction effects. 

Althongh van der Waals forces are present in every system, they dominate the disjoining pressnre in only a few simple cases, such as interactions of nonpolar and inert atoms and molecnles. It is common for surfaces to be charged, particularly when exposed to water or a liquid with a high dielectric constant, due to the dissociation of surface ionic groups or adsorption of ions from solution, hi these cases, repulsive double-layer forces originating from electrostatic and entropic interactions may dominate the disjoining pressure. These forces decay exponentially [5,6] ... 

More subtle effects of the dielectric constant and the applied bias can be found in the case of semiconductors and low-dimensionality systems, such as quantum wires and dots. For example, band bending due to the applied electric field can give rise to accumulation and depletion layers that change locally the electrostatic force. This force spectroscopy character has been shown by Gekhtman et al. in the case of Bi wires [38]. 

---