Copper indium sulfide

Nomura, R. Kanaya, K. Matsuda, H. 1988. Preparation of copper-indium-sulfide thin films by solution pyrolysis of organometallic sources. Chem. Lett. 17 1849-1850. 

Nomura, R. Sekl, Y. Matsuda, H. 1992. Preparation of copper indium sulfide (CuInS2) thin films by single-source MOCVD process using Bu2In(SPr)Cu(S2CNPrj)./. Mater. Chem. 2 765-766. 

Look, D. C. Manthuruthil, J. C. 1976. Electron and hole conductivity in copper indium sulfide (CuInS2)./. Phys. Chem. Solids 37 173-180. 

Kazmerski, L. L. Ayyagari, M. S. Sandborn, G. A. 1975. Copper indium sulfide (CuInS2) thin films. Preparation and properties. J. Appl. Phys. 46 4865 869. 

T. Rath, M. Edler, W. Haas, A. Fischereder, S. Moscher, A. Schenk, R. Trattnig, M. Sezen, G. Mauthner, A. Pein, et al. A Direct Route towards Polymer/Copper Indium Sulfide Nanocomposite Solar Cells. Advanced Energy Materials 2011,1,1046-1050. 

Li L, Pandey A, Werder DJ, Khanal BP, Pietryga JM, Klimov VI (2011) Efficient synthesis of highly luminescent copper indium sulfide-based Core/Shell nanocrystals with surprisingly... 

There is a review article by Modes and Cahen (67) which outlines numerous approaches for depositing copper indium sulfide and selenide. It also outlines a technique whereby the copper and indium can be codeposited and converted to the chalcogenide by annealing in hydrogen sulfide or selenide. 

Binsma, J. J. M. Giling, L. J. Bloem, J. 1982. Luminescence of copper (I) indium sulfide. I. The broad band emission and its dependence on the defect chemistry. 

CulnS2, CulnSe2. CuInS2 (CIS),films have been grown from mixed copper(II) chloride, indium(III) chloride cation precursor, and sodium sulfide anion precursor solutions.121122 XPS and XRD analyses revealed that, when the copper/indium concentration ratio in the solution was 1.25, a stoichiometric CIS film could be grown. The electrical parameters obtained with different copper/indium concentration ratios have been investigated.121... 

In another industrial process, flue dusts from smelting lead and zinc concentrates are boiled in acidified water. Thallium dissolves and is separated from insoluble residues by filtration. Dissolved thallium in solution then is precipitated with zinc. Thallium is extracted from the precipitate by treatment with dilute sulfuric acid which dissolves the metal. The solution may also contain zinc, cadmium, lead, copper, indium, and other impurities in trace amounts. These metals are precipitated with hydrogen sulfide. The pure thallium sulfate solution then is electrolyzed to yield thallium. 

Many other systems based on different nanoparticles have been introduced, such as copper indium disulfide (CuInS2) [263-265], copper indium diselenide (CuInSe2) [266,267], cadmium telluride (CdTe) [268], lead sulfide (PbS) [269,270], lead selenide (PdSe) [271], and mercury telluride (HgTe) [272]. Some of these systems show enhanced spectral response well into the infrared part of the solar spectrum [271,272]. In most cases the absorption of the nanocrystals was, however, quantitatively small as compared to the conjugated polymers. 

A heterojunction of copper indium selenide on n-type cadmium sulfide indicated that the films, as deposited, were p-type. These films yielded an OCV of 100 mV and SCC of 2 mA/cm . The main problem with these films was poor grain morphology. 

Semiconductor deposition materials used include amorphous silicon, polycrystalline silicon, micro-crystalline silicon, cadmium telluride, and copper indium selenide/sulfide. Typically, the top surface is low iron solar glass for rigid cells (a fluoropolymer for flexible cells), the encapsulant is crosslinkable ethylene-vinyl acetate (EVA), and the rear layer is a Tedlar - PET - Tedlar laminate (although glass, coated PET, or another bondable polymeric film are also used). 

The abundance of indium in the earth s cmst is probably about 0.1 ppm, similat to that of silver. It is found in trace amounts in many minerals, particulady in the sulfide ores of zinc and to a lesser extent in association with sulfides of copper, tin, and lead. Indium follows zinc through flotation concentration, and commercial recovery of the metal is achieved by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting and associated lead (qv) and copper (qv) smelting (see Metallurgy, EXTRACTIVE Zinc and zinc alloys). 

Indium was discovered by Reich and Richter in 1863 in Germany during spectroscopic observations of local zinc ores. The new element was named indium after its characteristic indigo blue spectral lines. Although widely distributed in nature, its concentration is very low, estimated to be about 0.1 mg/kg in the earth s crust. It is found mostly in zinc sulfide ores and to a lesser extent in sulfide ores of iron and copper. The metal does not occur in free elemental form in nature. 

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