Copper indium sulfide films

Nomura, R. Kanaya, K. Matsuda, H. 1988. Preparation of copper-indium-sulfide thin films by solution pyrolysis of organometallic sources. Chem. Lett. 17 1849-1850. 

Nomura, R. Sekl, Y. Matsuda, H. 1992. Preparation of copper indium sulfide (CuInS2) thin films by single-source MOCVD process using Bu2In(SPr)Cu(S2CNPrj)./. Mater. Chem. 2 765-766. 

Kazmerski, L. L. Ayyagari, M. S. Sandborn, G. A. 1975. Copper indium sulfide (CuInS2) thin films. Preparation and properties. J. Appl. Phys. 46 4865 869. 

CulnS2, CulnSe2. CuInS2 (CIS),films have been grown from mixed copper(II) chloride, indium(III) chloride cation precursor, and sodium sulfide anion precursor solutions.121122 XPS and XRD analyses revealed that, when the copper/indium concentration ratio in the solution was 1.25, a stoichiometric CIS film could be grown. The electrical parameters obtained with different copper/indium concentration ratios have been investigated.121... 

A heterojunction of copper indium selenide on n-type cadmium sulfide indicated that the films, as deposited, were p-type. These films yielded an OCV of 100 mV and SCC of 2 mA/cm . The main problem with these films was poor grain morphology. 

Semiconductor deposition materials used include amorphous silicon, polycrystalline silicon, micro-crystalline silicon, cadmium telluride, and copper indium selenide/sulfide. Typically, the top surface is low iron solar glass for rigid cells (a fluoropolymer for flexible cells), the encapsulant is crosslinkable ethylene-vinyl acetate (EVA), and the rear layer is a Tedlar - PET - Tedlar laminate (although glass, coated PET, or another bondable polymeric film are also used). 

Photon detectors consist of a thin film of semiconductor material, such as lead sulfide, lead telluride, indium antimonide, or germanium doped with copper or mercury, deposited on a nonconducting glass and sealed into an evacuated envelope. Photon flux impinging on the semiconductor increases its conductivity. Lead-sulfide detectors are sensitive to radiation below about 3 fj.m in wavelength and have a response time of about 10 /nsec. Doped germanium detectors cooled to liquid-helium temperatures are sensitive to radiation up to about 120 jitm in wavelength, and have a response time of approximately 1 nsec. 

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