Indium concentration

Because of the many different electrolyte solutions employed values are grouped according to the indium concentration. 

CulnS2, CulnSe2. CuInS2 (CIS),films have been grown from mixed copper(II) chloride, indium(III) chloride cation precursor, and sodium sulfide anion precursor solutions.121122 XPS and XRD analyses revealed that, when the copper/indium concentration ratio in the solution was 1.25, a stoichiometric CIS film could be grown. The electrical parameters obtained with different copper/indium concentration ratios have been investigated.121... 

Rapp (1961) has confirmed this equation in a study of the oxidation in air of Ag-In alloys at 550°C. The reaction proceeds with the internal formation of ln203 particles over a range of indium concentrations, but at a critical mole fraction of indium in the alloy, external oxidation occurs with the growth of a layer of ln203 covering the alloy. The transition from internal to external oxidation was found by Rapp to occur at the mole fraction of indium corresponding to... 

Indium concentrations in the polymetallic veins show a wide range (3.4 to 1184ppm In, Table 1). Based on the correlation coefficients of ore geochemistry, significant Indium (up to 1184 ppm) is related to the Ps2 mineralization stage and closely associated with Fe-rich sphalerite, but also with ferrokesterite. There are important In anomalies in Psi (up to 159.4 ppm) that are related to the Sn minerals, cassiterite, ferrokesterite and stannite (Crespi 2006). 

Amakawa, H., Alibo, D.S. and Nozaki, Y. (1996) Indium concentration in Pacific seawater. Geophys. Res. Letts, 23, 2473-2476. 

The motivation of this study was to establish a relationship between the structure of the films and their electrical and optical characteristics, which strongly depend on the indium concentration [11, 20], The conclusion of this study is clearly beyond the scope of this review. But the polarized EXAFS study has clearly evidenced that the indium doping affects the grain growth process by increasing the surface anisotropy of films. Finally this example shows that we have powerful experimental but also theoretical tools to study surfaces or oriented systems. 

The indium concentration was determined by polarographic and colorimetric methods after previous removal of the selenium, and the thallium concentration by a volumetric titration. The attainment of a constant solubility was checked. 

The solid solution LaAg Ini- crystallizes with a CsCl type stmcture (Balster et al., 1975). This pseudobinary system undergoes a martensitic (displacive) crystal structure transition. At low temperature the X-ray powder patterns of polycrystalline samples show line splitting corresponding to a cubic-to-tetragonal transformation. The indium concentration 1 - x and thus the electron count per formula unit has a large influence on the transition temperature. This structural phase transition is revealed also in the temperature dependence of the electrical resistivity. For indium concentrations above 5% the curves show a pronounced hysteresis behavior. 

Fig. 6.7. DC electrical conductivity of mercuiy-indium alloys as a function of indium concentration at constant temperature of 1500 °C and various pressures 1800 bar (1) 1900 bar (2) 2000 bar (3) and 2100 bar (4).

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