Chemical fluid deposition

Chemical extractants, 10 750 Chemical fiber modification, 16 14 Chemical finishing, of fibers, 11 180-181 Chemical fluid deposition (CFD), of metals, 24 22... 

Physical and Chemical Fluid Deposition of Thin Films (Fluid-Surface Coupling )... 

CFD [Chemical Fluid Deposition] A process for depositing thin films on solid surfaces by a chemical reaction in a liquid such as supercritical carbon dioxide. Superior to CVD in being capable of operation at almost ambient temperatures. Demonstrated for depositing platinum metal on silicon wafers, polymer substrates, and porous solids by hydrogen reduction of an organo-platinum compound at 80°C. 

Chemical fluid deposition (CFD) [47] has been used to deposit metal films from non-volatile precursors equivalent volatile precursors for conventional CVD do exist, but the CFD approach broadens the range of available precursors and allows deposition at lower temperatures. 

Specific physicochemical properties of the supercritical fluids offer flexible alternatives to established processes like chemical vapor deposition (CVD), which is used in the preparation of high-quality metal and semiconductor thin films on solid surfaces. Watkins et al. [43] reported a method named chemical fluid deposition (CFD) for the deposition of CVD-quality platinum metal films on silicon wafers and polymer substrates. The process proceeds through hydrogenolysis of dimethyl-(cyclooctadiene)platinum(ll) at 353 K and 155 bar. 

Yen C, Shimizu K, Lin Y, Bailey F, Cheng 1, Wai C (2007) Chemical fluid deposition of Pt-based bimetallic nanoparticles on multiwalled carbon nanotubes for direct methanol fuel cell application. Energ Fuels 21 2268-2271... 

Chemical vapor deposition is a synthesis process in which the chemical constituents react in the vapor phase near or on a heated substrate to form a solid deposit. The CVD technology combines several scientific and engineering disciplines including thermodynamics, plasma physics, kinetics, fluid dynamics, and of course chemistry. In this chapter, the fundamental aspects of these disciplines and their relationship will be examined as they relate to CVD. 

Application of Supercomputers To Model Fluid Itansport and Chemical Kinetics in Chemical Vapor Deposition Reactors... 

SupercriUcal Fluid DeposiUon (SFD) Metal films may be grown from precursors that are soluble in CO2. The SFD process yields copper films with fewer defects than those possible by using chemical vapor deposition, because increased precursor solubility removes mass-transfer hmitations and low surface tension favors penetration of high-aspect-ratio features [Blackburn et al.. Science, 294, 141-145 (2001)]. 

Silver(I) /3-diketonate derivatives have received significant attention due to the ease with which they can be converted to the elemental metal by thermal decomposition techniques such as metal organic chemical vapor deposition (MOCVD).59 The larger cationic radius of silver(I) with respect to copper(I) has caused problems in achieving both good volatility and adequate stability of silver(I) complexes for the use in CVD apparatus. These problems have been overcome with the new techniques such as super critical fluid transport CVD (SFTCVD), aerosol-assisted CVD (AACVD), and spray pyrolysis, where the requirements for volatile precursors are less stringent. 

Interest in the crucial processes of nucleation and the growth of solids from fluid phases has a long and multidisciplinary history [50-53]. This research topic involves chemistry, chemical physics, material science, chemical engineering and physics, and, as a consequence, both theoretical and experimental studies were carried out by specialists in these fields. Thus, the following discussion does not pretend to be an exhaustive literature coverage of what is known about nucleation and growth, but rather, through recent articles, tries to review contributions especially relevant to controlled chemical vapour deposition of nanoparticles, always from a multidisciplinary point of view. 

Stagnation flows represent a very important class of flow configurations wherein the steady-state Navier-Stokes equations, together with thermal-energy and species-continuity equations, reduce to systems of ordinary-differential-equation boundary-value problems. Some of these flows have great practical value in applications, such as chemical-vapor-deposition reactors for electronic thin-film growth. They are also widely used in combustion research to study the effects of fluid-mechanical strain on flame behavior. 

M.E. Coltrin, RJ. Kee, and G. H. Evans. A Mathematical Model of the Fluid Mechanics and Gas-Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor. J. Electrochem. Soc., 136(3) 819-829,1989. 

One sign of progress is the extent to which sophisticated research on transport phenomena, particularly mass transfer, has penetrated several other fields, including those described in later papers of this volume. Examples include fundamental work on the mechanics of trickle beds [17] within reactor engineering studies of dispersion in laminar flows [18] in the context of separations important to biotechnology coupling between fluid flows and mass transfer in chemical vapor deposition processes for fabrication of semiconductor devices [19] and optical fiber preforms [20] and the simulation of flows in mixers, extruders, and other unit operations for processing polymers. 

The design of the interstices filling in colloidal crystals with appropriate media and subsequently fluid-solid transformation is central to the whole synthesis. Fluid precursors in the voids of crystal arrays can solidify by polymerization and sol-gel hydrolysis. More recently, many methods have been developed including salt precipitation and chemical conversion, chemical vapor deposition (CVD), spraying techniques (spray pyrolysis, ion spraying, and laser spraying), nanocrystal deposition and sintering, oxide and salt reduction, electrodeposition, and electroless deposition. 

There are three possible types of boundary layers involved in CMP, as shown in Figure 4.6. The first boundary layer is a stagnant fluid layer that occurs as the slurry fluid passes over the wafer surface. This layer is analogous to the boundary layer that occurs in chemical vapor deposition (CVD) processes. The second boundary layer is the double layer that forms at the surface as a result of electrical charge that accumulates at the surface. The third boundary layer is a surface film that forms as a result of chemical modification of the wafer surface. A discussion of each of these boundary layers follows. 

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