Charge-modulated field-effect

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

P. G. LeComber and W. E. Spear, The Development of the a-Si H Field-Effect Transistor and Its Possible Applications D. G. Ast, a-Si H FET-Addressed LCD Panel S. Kaneko, Solid-State Image Sensor M. Matsumura, Charge-Coupled Devices M. A. Bosch, Optical Recording A. D Amico and G. Fortmato, Ambient Sensors H. Kukimoto, Amorphous Light-Emitting Devices R. J. Phelan, Jr., Fast Detectors and Modulators J. I. Pankove, Hybrid Structures... 

Figure 3.38. Principle of the photorefractive effect By photoexcitation, charges are generated that have different mobilities, (a) The holographic irradiation intensity proHle. Due to the different diffusion and migration velocity of negative and positive charge carriers, a space-charge modulation is formed, (b) The charge density proHle. The space-charge modulation creates an electric Held that is phase shifted by 7t/2. (c) The electric field profile. The refractive index modulation follows the electric field by electrooptic response, (d) The refractive index profile.

The inhomogeneity of the micellar aggregate also affords assisted spin trapping and the exploitation of magnetic field effects on the charge separated ion pairs [48]. Optical modulation spectroscopy can be used, for example, to follow the decay of radicals formed in homogeneous solution and in SDS micelles. Enhancements of a factor of about 50 in the lifetimes and the steady state concentrations of the radical were observed in the micelle, and a kinetic analysis led to a value of 2 x 103 s 1 for the exit rate constant from the micelle [49]. 

Another possibility to determine PGr, which is free of these drawbacks, is electric-field modulation (EFM) of photoluminescence (PL). Electric-field effect on the effective charge separation efficiency (rj0 l) shows up in the varying population of CT states, and consequently, in the varying concentration of the emitting states. It is expected that the field-induced increase in the charge separation efficiency would translate into PL quenching. The ratio (<5) of the PL efficiency in the presence (external electric field (F) would give directly Pgr... 

Consider a plane-parallel condenser of capacitance C whose plates are a p-type semiconductor (e.g., a CP) and a metal, and polarize the latter negatively. Excess positive charges (i.e., holes) appear at the surface of the semiconductor, and since its conductivity is low, they are in fact distributed over a certain thickness within the material. These excess holes, or at least part of them, should take part in the conduction. Applying a voltage to an external electrode not in contact with the semiconductor modulates its conductivity. This is the principle of the field effect, and clearly this control of the current through a gate electrode opens the possibility of transistor action without requiring the existence of p-n junctions. 

If the semiconductor surface bears localized bound states (surface states), part of the induced charge will reside in these states, thus decreasing the conductivity modulation induced by the transverse field. For a long time, field effect was therefore not used in devices but was a very useful tool for studying semiconductor surfaces and surface states [249] (see also Ref. 236, p. 285). 

These are also known as flow field-effect transistors (flow FETs). Fluidic transistors make use of the surface charge conditions to control the flow in a microfluidic chip. They are generally used with electrokinetically based microflows to modulate the zeta potential at the shear plane. Fluidic... 

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