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Electrolyte gating

Pobelov I, Li Z, Wandlowski T (2008) Electrolyte gating in redox-active tunneling junctions -an electrochemical STM approach. J Am Chem Soc 130 16045-16054... [Pg.116]

Keywords Break junction Charge transport Electrolyte gate Metal nanocluster Molecular junction Scanning tunneling microscopy Scanning tunneling spectroscopy... [Pg.122]

In the following we will focus on three molecular electronics test beds as developed and employed for applications at electrified solid/liquid interfaces (1) STM and STS, (2) assemblies based on horizontal nanogap electrodes, and (3) mechanically-controlled break junction experiments. For a more detailed description of the methods we refer to several excellent reviews published recently [16-22]. We will also address specific aspects of electrolyte gating and of data analysis. [Pg.126]

Fig. 3 Principle of electrolyte gating. Tuning of the Fermi levels of WEI and WE2 relative to the molecular levels enables measuring of current (0-voltage (E) characteristics i vs ( wei -L we2) at fixed wei or we2, i vs wei or we2 at fixed bias Ebias = ( wei -Ewe2> as well as barrier height profiles i vs distance z of tailored molecular junctions in a vertical SPM-based configuration respective horizontal nanoelectrode assembly... Fig. 3 Principle of electrolyte gating. Tuning of the Fermi levels of WEI and WE2 relative to the molecular levels enables measuring of current (0-voltage (E) characteristics i vs ( wei -L we2) at fixed wei or we2, i vs wei or we2 at fixed bias Ebias = ( wei -Ewe2> as well as barrier height profiles i vs distance z of tailored molecular junctions in a vertical SPM-based configuration respective horizontal nanoelectrode assembly...
Rosenblatt S, Yaish Y, Park J et al (2002) High performance electrolyte gated carbon nanotube transistors. Nano Lett 2 869-872... [Pg.169]

Katsura T, Yamamoto Y, Maehashi K et al (2008) High-performance carbon nanotube field-effect transistors with local electrolyte gates. Jpn J Appl Phys 47 2060-2063... [Pg.169]

Alam MM, Wang J, Guo YY, Lee SP, Tseng HR (2005) Electrolyte-gated transistors based on conducting polymer nanowire junction arrays. J Phys Chem B 109 12777-12784... [Pg.224]

Figure 26.9 Electrochemical gating of SWCNT-FETs covered with two different solid polymer electrolytes (SPEs). The SPEs were spotted from solution on top of the FET surface and heated at 60 °C for an hour. Conductance of the same individual s-SWCNT (F(js = 0.1 V) with two different SPEs is plotted as a function of the voltage at the polymer-electrolyte-gate (Fpec)- An adjacent microfabricated AuPd electrode ( 200 pm distance) on the substrate was... Figure 26.9 Electrochemical gating of SWCNT-FETs covered with two different solid polymer electrolytes (SPEs). The SPEs were spotted from solution on top of the FET surface and heated at 60 °C for an hour. Conductance of the same individual s-SWCNT (F(js = 0.1 V) with two different SPEs is plotted as a function of the voltage at the polymer-electrolyte-gate (Fpec)- An adjacent microfabricated AuPd electrode ( 200 pm distance) on the substrate was...
Figure 26.14 FETs based on SWCNT networks (a) Atomic Force Microscope (AFM) amplitude image of a network of tubes grown by chemical vapour deposition. (b) Gate dependence of conductance of such a network before and after selective ECM. Fjj is 10 mV before and 100 mV after ECM. (c) Variation of conductance of the same device after spotting two different solid polymer electrolytes and using an electrode in contact with the SPE as the gate (F s = 100 mV). The composition of the SPE is identical to that in Figure 26.9. Fpeg is the voltage applied to the polymer electrolyte-gate. Figure 26.14 FETs based on SWCNT networks (a) Atomic Force Microscope (AFM) amplitude image of a network of tubes grown by chemical vapour deposition. (b) Gate dependence of conductance of such a network before and after selective ECM. Fjj is 10 mV before and 100 mV after ECM. (c) Variation of conductance of the same device after spotting two different solid polymer electrolytes and using an electrode in contact with the SPE as the gate (F s = 100 mV). The composition of the SPE is identical to that in Figure 26.9. Fpeg is the voltage applied to the polymer electrolyte-gate.
Panzer, M. J., and Frisbie, C. D., Polymer electrolyte gate dielectric reveals finite windows of high conductivity in organic thin film transistors at high charge carrier densities, J. Am. Chem. Soc., 127, 6960, 2006. [Pg.68]

Panzer, M., Newman, C., and Frisbie, C., Low-voltage operation of a pentacene field effect transistor with a polymer electrolyte gate dielectric, Appl. Phys. Lett. 86, 1035031-103503, 2005. [Pg.250]

Electrolyte Gating in (Single) Molecule Junctions Containing Redox-Active Viologen Derivatives... [Pg.238]

Solid electrolyte-gate field effect transistor... [Pg.25]

Panzer, M.J. and Frisbie, C.D. (2007) Polymer electrolyte-gated organic field-effect transistors low-voltage, high-current switches for organic electronics and testbeds for probing... [Pg.368]

Figure 25.9 Schematic of an electrolyte-gated OFET under bias. Figure 25.9 Schematic of an electrolyte-gated OFET under bias.

See other pages where Electrolyte gating is mentioned: [Pg.216]    [Pg.121]    [Pg.122]    [Pg.125]    [Pg.132]    [Pg.132]    [Pg.163]    [Pg.164]    [Pg.165]    [Pg.178]    [Pg.179]    [Pg.572]    [Pg.584]    [Pg.587]    [Pg.632]    [Pg.240]    [Pg.531]    [Pg.523]    [Pg.193]    [Pg.181]    [Pg.232]    [Pg.238]    [Pg.193]    [Pg.177]    [Pg.177]    [Pg.23]    [Pg.314]    [Pg.584]    [Pg.591]   
See also in sourсe #XX -- [ Pg.121 , Pg.132 , Pg.165 ]

See also in sourсe #XX -- [ Pg.232 , Pg.238 ]




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