Carbides data collection

Hard materials are used as thin hard coatings of some microns thickness for wear protection of tools and machine parts because of their high abrasive wear resistance. For the selection of the coating material the physical, mechanical, and technological properites of these coatings, required by the application, are decisive. The following data collection presents fundamental and available material properties for approximately 130 hard materials as a result of a literature search on carbides, nitrides, borides, silicides, and oxides. 

After the detail study through a thorough process qualification, the new boron carbide coated chamber wall is used to replace the previously anodized aluminum surface. The new ceramic material such as YAG or Y2O3 is used to replace original high purity alumina. This configuration was introduced to semiconductor wafer fabrication for evaluation. Excellent etch performance, enhanced defect and particle reduction, and 50 to 100 times chamber lifetime improvement are reported. The production yield of the wafer fabrication also improved about 7% in production at the customer site (see Fig.l9) [41]. The following data provide some of the information. The sequence of the data collection is as follows ... 

Barbara K. Warren, Union Carbide Is anybody here willing to set up a listserve so that we may share our ideas ACS/CPT not only collects data on women faculty, but looks at how many women are on the faculty and what their level of development is. If it seems to ACS/CPT that women are not being promoted or are not getting sabbaticals or equipment, it asks questions. This is not done for every school, but it is something that ACS has been doing for a long time. 

These data were collected on a Siemens D500 diffractometer, using monochromatic CuKa radiation, 6 seconds count time and a 0.01° 29 step size. The receiving slit was 0.05 and the apertures were 0.3°. The data were processed using programs written at Union Carbide Corporation. 

The future of Raman spectroscopy in the research and the development of catalysts appears to be extremely promising. The recent revolution in Raman instrumentation has dramatically increased the ability to detect weak Raman signals and to collect the data in very short times. Thus, it is now possible to perform real-time Raman analysis and to study many catal) c systems that give rise to unusually weak Raman signals. The enormous strides in Raman instrumentation now allow for the characterization of a wide range of catalytic materials bulk mixed oxides, supported metal oxides, zeolites, supported metal systems, metal foils, as well as single crystal surfaces. Few Raman studies have been reported for sulfides, nitrides, or carbides, but these catalytic materials also give rise... 

The infonnation in Section 7.2 is based upon mid-1999 data. It was collected prior to the Exxon-Mobil and Dow-Union Carbide mergers, although mention is made of these impending changes. 

Rich Manser and Frank Jones collected the field data used in this modeling exercise. Rich Manser also tested the modeling procedure during preliminary computer runs. Aldicarb analyses were performed by laboratories at the Univ. of Wise.-Stevens Point and the Univ. of Wise.-Madison. Quality control checks on spiked samples were performed by Union Carbide. Funds for the computer simulation were provided by a grant from the ARCO Foundation. 

The occurrence of the binary borides of the alkaline, alkaline earth, aluminum, and transition elements has been collected in Table 1, together with boron compounds of the right main group elements (carbides, etc.). Only relatively well-established phases have been included. Noncorroborated and/or badly characterized borides lacking precise composition and structure data are not included. The reader is referred to other sources for references. There are no binary borides among the Cu, Zn, Ga, and Ge group elements with the exception of a noncorroborated early report on diborides in the Ag-B and Au-B systems. Two silicon borides have been established, namely, SiB3 4 and SiBe. 

While all volumes in this series, Azeotropic Data, are collections of data, mostly from the literature, the supplement that was published as No. 35 in the Advances in Chemistry Series included previously unpublished data from industrial files, of which most was from Union Carbide Chemicals Co., assembled by William S. Tamplin. Additional contributions came from Commercial Solvents Corp., Eastman Chemical Products, Inc., Farbenwerke Hoechst, Imperial Chemical Industries Ltd., and Minnesota Mining and Manufacturing Co. These data are continued in the present volume. 

Silicon carbide occurs in two sUghtly different crystal structures the cubic pSiC, and a large number of hexagonal rhombohcdral varieties known collectively as aSiC.1 11 1 The single cubic form, pSiC, is obtained vdien the carbide is synthesized below 2100"C. It is a fiice-centered cubic (fee) structure of the zincblende type shown in Fig. 7.1. Zincblende is a mineral of zinc sulfide also known as sphalerite. In this illustration, the zincblende structure is represented with the cube diagonals vertical and appears as series of identical (although translated) puckered sheets of atoms widi an AA layer sequence. Another view of the pSiC crystal is shown in Fig. 7.2 (the carbon atoms, all located in the 4/ sites, are omitted for clarity] The pSiC structure has no polytype (see Table 7.3 for crystal structure data). 

Kelley s collection of data on metal carbides and nitrides includes thermodynamic data for methane and ammonia because some of the... 

At the Japan Atomic Energy Research Institute (JAERI) mixed carbide and nitride fuels have been investigated fi om the viewpoint of collection of basic data on advanced FR fuels and also fuels for transmutation of minor actinides [7.56, 7.61]. The research covers fabrication technology, property measurements [7.57, 7.58] and irradiation tests [7.59]. Nine fuel pins with uranium-plutonium carbide were irradiated in Japan Research Reactor-2 (JRR-2) and... 

I his appendix contains price information for the set of materials for which Appendix B gives the properties. The collection of valid cost data for materials is an extremely difficnlt task, which explains the dearth of materials pricing information in the literature. One reason for this is that there are three pricing tiers manufacturer, distributor, and retail. Under most circumstances, we cite distributor prices. For some materials (e.g., specialized ceramics, such as sihcon carbide and silicon nitride), it is necessary to use manufacturers prices. In addition, there may be significant variation in the cost for a specific material. There are several reasons for this. First, each vendor has its own pricing scheme. Furthermore, cost depends on quantity of material purchased and, in addition, how it was processed or treated. We endeavored to collect data for relatively large orders—that is, quantities on the order of 900 kg (2000 Ibm) for materials that are typically sold in bulk lots—and also for common shapes/treatments. When possible, we obtained price quotes from at least three distributors/manufacturers. 

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