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Backscattering of ions

ISS Ion scattering spectroscopy [153, 154] Inelastic backscattering of ions (-1 keV ion beam) Surface composition... [Pg.315]

Heiland W and Taglauer E 1977 The backscattering of low energy ions and surface structure Surf. Sc/. 68 96-107... [Pg.1824]

Rutherford backscattering spectrometry is the measurement of the energies of ions scattered back from the surface and the outer microns (1 micron = 1 pm) of a sample. Typically, helium ions with energies around 2 MeV are used and the sample is a metal coated silicon wafer that has been ion implanted with about a... [Pg.1827]

Saarilahti J and Rauhala E 1992 Interactive personal-computer data analysis of ion backscattering spectra A/uc/. Instrum. Methods B 64 734... [Pg.1849]

W. K. Chu, J. W. Mayer, and M. -A. Nicolet. Backscattering Spectrometry. Academic Press, New York, 1978, brief section on nuclear reaction analysis, discussions on energy loss of ions in materials, energy resolution, surface barrier detectors, and accelerators also applicable to NRA ... [Pg.693]

A variety of other techniques have been used to investigate ion transport in conducting polymers. The concentrations of ions in the polymer or the solution phase have been monitored by a variety of in situ and ex situ techniques,8 such as radiotracer studies,188 X-ray photoelectron spectroscopy (XPS),189 potentiometry,154 and Rutherford backscatter-ing.190 The probe-beam deflection method, in which changes in the density of the solution close to the polymer surface are monitored, provides valuable data on transient ion transport.191 Rotating-disk voltammetry, using an electroactive probe ion, provides very direct and reliable data, but its utility is very limited.156,19 193 Scanning electrochemical microscopy has also been used.194... [Pg.580]

RBS is based on collisions between atomic nuclei, and it involves measuring the number and energy of ions in a beam which backscatter after colliding with atoms in the near-surface region of a sample. The use of scattering as an analysis tool led to the first in situ chemical analysis of the lunar surface during the landing of Surveyor V. The use of particle accelerators as an a-source was the next powerful step made in Chalk River (Canada) and Arus (Denmark). [Pg.83]

Ion beam probes are used in a wide range of techniques, including Secondary Ion Mass Spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS) and proton-induced X-ray emission (PIXE). The applications of these and number of other uses of ion beam probes are discussed. [Pg.229]

Fig. 11. Channeling data for the 111 plane (Marwick et al., 1987, 1988), showing data for the nuclear reaction with 2H atoms in the sample and the yield of elastically backscattered 3He ions. The central peak in the 2H scan is important evidence that the 2H atoms occupy bond-center sites. The solid line is a fit to the data, as described in the text. Fig. 11. Channeling data for the 111 plane (Marwick et al., 1987, 1988), showing data for the nuclear reaction with 2H atoms in the sample and the yield of elastically backscattered 3He ions. The central peak in the 2H scan is important evidence that the 2H atoms occupy bond-center sites. The solid line is a fit to the data, as described in the text.
Rutherford backscattering spectrometry spect A method of determining the concentrations of various elements as a function of depth beneath the surface of a sample, by measuring the energy spectrum of ions which are backscattered out of a beam directed at the surface. roth-or-ford bak,skad-3-rir spek tram-o-tre rutherfordium chem A chemical element, symbolized Rf, atomic number 104, a synthetic element the first element beyond the actinide series, and the twelfth transuranium element., r3lh 3t fdr-de-3m ... [Pg.330]

In ISS, like in SIMS, gas ions such as helium or neon are bombarded on the sample surface at a fixed angle of incident. The ISS spectrum normally consists of a single peak of backscattered inelastic ion intensity at an energy loss that is characteristic of the mass of surface atom. From the pattern of scattered ion yield versus the primary ion energy, information about elements present on the sample surface can be obtained at ppm level. [Pg.20]

M. L. Polignano and G. Queirolo, Studies of the Stripping Hall Effect in Ion-Implanted Silicon J. Stoemenos, Transmission Electron Microscopy Analyses R. Nipoti and M. Servidori, Rutherford Backscattering Studies of Ion Implanted Semiconductors... [Pg.302]

Figure 4. Change of the ejection angle of a sputtered pyridine molecule (right one) due to the blocking by a neighboring pyridine molecule (left one). The labels are in fs where 1 fe lxl0 15 second. (0 fs) Initial positions of the atoms. (33 fs) The backscattered Ar+ ion collides and ejects the pyridine molecule at a polar angle of 8-66° (85 fs) The ejecting... Figure 4. Change of the ejection angle of a sputtered pyridine molecule (right one) due to the blocking by a neighboring pyridine molecule (left one). The labels are in fs where 1 fe lxl0 15 second. (0 fs) Initial positions of the atoms. (33 fs) The backscattered Ar+ ion collides and ejects the pyridine molecule at a polar angle of 8-66° (85 fs) The ejecting...

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