Aluminium Sputtered

Table 4.3 provides a comparison between the helium permeation rates in two films, a laminate incorporating a 6 pm aluminium foil, PET 12 pm/Aluminium 6 pm/HDPE 50 pm (Film B) and a multi-layered barrier composed of four aluminium-sputtered PET sheets laminated onto a 50 pm PE (Film A). Tests were run at 24 °C. From the measurement of... 

Experimental values for tire sputtering efficiency tend to show lower values of a for elements, such as aluminium and mngsten which form stable oxides, compared with the metals such as gold and platinum which do not under normal experimental conditions. This is probably due to the presence of a surface oxide, since industrial sources of argon, which are used as a source of ions for example, usually contain at least 1 ppm of oxygen, which is more than enough to oxidize aluminium and tungsten. 

Thin films of thickness typically 10 nm are readily formed in a vacuum chamber by evaporation, sputtering , or chemical vapour deposition (CVD). Many metals and metal alloys, e.g. aluminium, silver, gold and Ni-Cr, can be... 

The technique may be said to combine the advantages of vacuum evaporation and sputtering, so that excellent qualities of adhesion are obtained without a limitation of maximum thickness of the coating—while at the same time the rate of deposition can be comparatively high. Many metals, alloys, and compounds may be deposited, on both metallic and non-metallic articles. However, its use at present is mainly for functional and protective applications, particularly where high resistance to corrosion is required. Thus, as examples, aluminium may be deposited on various types of steel and on titanium for uses in the aerospace and defence industries—and can be regarded as a less hazardous replacement for cadmium electroplating. 

Examples of XPS spectra recorded from in situ sputter-deposited ZnO and ZnO Al films are shown in Fig. 4.6. Absence of contaminations is evident from the survey spectra, which show only emissions from Zn and O. Aluminium-doped ZnO films, deposited from a target with a nominal Al concentration of 2 wt%, also show a small Al signal. Detailed spectra of the Zn 2p3/2, O Is, Zn LMM Auger, and valence band emissions for largely different deposition conditions are given in the lower half of Fig. 4.6. 

Fig. 4.7. Aluminium content of sputter deposited ZnO Al films. A target with a nominal A1 content of 2wt% has been used. The shadowed regions indicate the general behavior. The atomic concentration is calculated with and without considering the high binding energy oxygen species, which contributes to the O Is signal (see Sect. 4.2.2.2)...

The substrate was usual 1.1 mm glass with sputtered aluminium layer. Ni was used as a catalyst. For optimization of cathode surface topography, three types of samples were prepared, with different catalyst distribution on the substrate. Catalyst layer in the first sample was uniform sputtered Ni layer. In the second and the third samples, the catalyst sputtering was produced through screens with 1 mm h 50 pm holes correspondingly. The distance between holes compared with the twice island diameter. The total area of each cathode sample was about 0.5 cm2. Cathodes are shown on Fig. 1. 

Figure 8.2 X-ray diffraction scans in Bragg-Brentano geometry obtained from the pentacene (Pc) films deposited on sputtered aluminium oxide at different growth temperatures (see Table 8.1). The reflections corresponding to the (001) planes of the a- and 3-phase are num-...

Figure 8.4 AFM images of the Pc films deposited on sputtered aluminium oxide (samples A to F of Table 8.1). For further details see text.

We prepared aluminium oxide films by radio frequency (r.f) magnetron sputtering fi om an aluminium oxide target in a dedicated vacuum chamber. To study the growth and structure of these films deposited on silicon oxide and films of DIP we used X-ray reflectivity, cross-sectional transmission electron microscopy (TEM) and atomic force microscopy (AFM) in contact mode. For further details on the preparation of the aluminium oxide films we refer to Refs. [112, 113]. 

To address this problem we have prepared highly crystalline films of the organic semiconductor DIP and capped them with r.f magnetron sputtered aluminium oxide films. 

Pure aluminium (99.99%) films on glass substrates were prepared by magnetron sputtering or eleetron beam evaporation. Anodisation of aluminium was earried out in a stirred eleetrolyte of 0.01 M tartarie aeid. The pH value of the solution was adjusted to pH = 7 by ammonium hydroxide. All ehemieals (Al-drieh) were used without additional purifieation. 

The morphology of the sputtered aluminium film on a glass substrate (1000 nm thickness) before and after anodisation was studied by AFM microscopy. The surface roughness of both films is approximately 35 nm. The... 

S-200-A1 and S-lOOO-Al aluminium fdms sputtered on glass substrates with a thickness of 200 and 1000 nm, respectively. E-200-A1 aluminium film (200 nm thickness) evaporated on glass. 

These are produced by several conversion processes (evaporation, sputtering, chemical plasma deposition). Evaporation is the same method as that used to create metallisation using aluminium. A material is heated in a crucible by either a resistive heat or an electron beam gun (hence the name electron beam deposition), whereby the material evaporates and subsequently condenses on a chilled film in a vacuum chamber. In the case of Sit), coatings, the aluminium used in metallisation is replaced by SiO/Si02. 

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