Cross-sectional transmission electron microscopy

Thin epitaxial films (less than 3 nm) of CrAs and CrSb with zinc-blende structure can be grown on GaAs substrates by MBE. Their 7c exceeds 400 K (Akinaga et al. 2000c Zhao et al. 2001b). A zinc-blende structure is confirmed by in-situ RHEED collected during the growth and ex-situ cross-sectional transmission electron microscopy (TEM). The... 

M. Natan, S.W. Duncan. Microstructure and growth kinetics of CrSi2 on Si 100 studied using cross-sectional transmission electron microscopy // Thin Solid Films. -1985.-V.123, No.l.-P.69-85. 

XTEM Cross-sectional transmission electron microscopy... 

Figure 8. Cross-section transmission electron microscopy image of a nanocrystalline Ti02 anatase film. The nominal crystallite size is 16 nm.

Figure 9.9 Cross-sectional transmission electron microscopy images of two Au/DIP/silicon oxide hetero-structures. While the An contact prepared at (a) -120 °C and a rate of 23 A/min exhibits rather weU-defined interfaces, the An contact prepared at (b) 70 °C and a rate of 0.35 A/min shows strong interdiffusion. Note that individual lattice planes of the DIP film can be resolved. Figures by courtesy of A. Durr and from Ref. [86] with permission.

We prepared aluminium oxide films by radio frequency (r.f) magnetron sputtering fi om an aluminium oxide target in a dedicated vacuum chamber. To study the growth and structure of these films deposited on silicon oxide and films of DIP we used X-ray reflectivity, cross-sectional transmission electron microscopy (TEM) and atomic force microscopy (AFM) in contact mode. For further details on the preparation of the aluminium oxide films we refer to Refs. [112, 113]. 

PMDA-ODA) polyimide when the metal was deposited at elevated temperatures and low deposition rates. The formation of Cu and Ag clusters in the bulk of polyimides has also been shown by means of cross-sectional transmission electron microscopy (see below). 

Johansson, S. and Schweitz, J., 1988, Contact damage in single-crystalline silicon investigated by cross-sectional transmission electron microscopy, /. Am. Ceram. Soc., Vol. 71, pp. 617-623. 

Cross-section transmission electron microscopy (XTEM) images of the samples give views of the layers with an excellent resolution. Figure 8 shows the image of the 14-period W/Si multilayer, whose in-situ reflectivity was shown in Fig. 3. A detail of the first layers is given in Fig. 9. 

A cross-sectional transmission electron microscopy (TEM) image of a material with predetermined morphology of spherical pores was examined. The structure consists of an interfacial layer, structural layer, and a substrate. The substrate is in direct mechanical contact with the interfacial layer. The structural layer is composed of spherical nanopores nanostructure, and essentially consists of the cross-linkable polymer. The interfacial layer lacks the spherical nanopores. The thickness of the interfacial layer is 2-30 nm. The structural layer thickness is of the range 50-300 nm. 

High-resolution Auger or secondary ion mass spectrometry (SIMS) analyses of see fracture surfaces, especially around crack-arrest features, have not kept pace with instrument development, and there is great scope for well-designed experiments of this type supported by cross-sectional transmission electron microscopy. 

Figure 6 Lattice image of a 3C-SiC/Si interface obtained by cross-sectional transmission electron microscopy (TEM).

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