Wafer metallization

In this chapter we describe the basic principles involved in the controlled production and modification of two-dimensional protein crystals. These are synthesized in nature as the outermost cell surface layer (S-layer) of prokaryotic organisms and have been successfully applied as basic building blocks in a biomolecular construction kit. Most importantly, the constituent subunits of the S-layer lattices have the capability to recrystallize into iso-porous closed monolayers in suspension, at liquid-surface interfaces, on lipid films, on liposomes, and on solid supports (e.g., silicon wafers, metals, and polymers). The self-assembled monomolecular lattices have been utilized for the immobilization of functional biomolecules in an ordered fashion and for their controlled confinement in defined areas of nanometer dimension. Thus, S-layers fulfill key requirements for the development of new supramolecular materials and enable the design of a broad spectrum of nanoscale devices, as required in molecular nanotechnology, nanobiotechnology, and biomimetics [1-3]. 

HIBS is the same as RBS, except that heavy ions are used instead of He++. It is an ion beam analysis tool patented by the Sandia Corporation of the USA, and was developed to enable the measurement of trace levels of surface contamination on silicon wafers. Metal contamination present in starting material is detrimental to devices, since it results in defects which limit wafer yields and impair circuit operation. 

CMP processes for oxide planarization (ILD and STI) rely on slurry chemistry to hydrolyze and soften the Si02 surface. Mechanical abrasion then controls the actual material removal. Thus, the key process output control variables (i.e., removal rate and nonuniformity) are strong functions of the mechanical properties of the system, namely, the down force and the relative velocity between the pad and the wafer. Metal CMP processes such as copper CMP rely more on chemical oxidation and dissolution of the metal than mechanical abrasion to remove the metal overburden. Consequently, careful control of the chemistry of the CMP process is more important for these CMP processes than it is for oxide CMP. Thus, CMP tools and processes optimized for ILD may not be optimal for metal CMP and vice versa. 

A NOVEL ELECTROLYTE COMPOSITION FOR COPPER PLATING IN WAFER METALLIZATION... 

Uses Binder, antistat, slip control, gellant for textile and paper treatment antisticking aid in cellophane film binder in catalysts, inorg. film, ceramic fiber, precision casting, insulating materials refractory material glass fibers vehicle for paints and adhesives for fabric and paper improves adhesion, durability, abrasion resist, in coatings antislip in floor waxes in polishes for silicon semiconductor wafers metal surf, treatment batteries food pkg. applies. 

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