Volatile memory

Figure 9. Schematic representation of an MOS non-volatile memory device and its components.

Table III. Components of an MOS Non-volatile Memory Device and Their Methods of Fabrication...

Kozicki, M. N. Balakrishnan, M. Gopalan, C. Ratnakumar, C. Mitkova, M. 2005. Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. Proceedings of the Non-Volatile Memory Technology Symposium (Dallas, TX Nov. 7-10, 2005), pp. 83-89. 

Insertion of the ambient temperatures in Eq. 1 results R0 in and a. Since the ambient temperature is calculated from a polynomial funtion (eq. 2) it is necessary to determine the polynomial coefficients by a least square fit regression over the ambient temperature range 0-50°C. Together with S0,. Si, b, and c, these values are written by the calibration computer to the non volatile memory of the microcontroller. As a calibration check two additional blackbody readings are performed at a third ambient temperature (see Fig. 3.48). 

It is important to perform a data capture operation for electronic data as soon as possible to maximize the quantity and quality of such information. For example, one investigator had to download the data within the preset file purge time of eight hours. The programmer was on vacation and there was no documentation available on the program. Even when computer specialists are available, this may be a difficult task because computer specialists do not frequently encounter the questions asked by investigators, f f there is a of loss of electric power, information may be accessible for a limited period due to battery backup for volatile memory. (Email should also be considered as electronic evidence.)... 

In traditional electronics - LCR circuits, for example - the Ls and the Cs are invariably oxide materials. In the area of integrated semiconductor devices, gate dielectrics [18], dielectrics in dynamic random access memories [19], ferroelectrics in non-volatile memories [20], and decoupling capacitors [21] are all oxide materials. Oxides are also at the heart of many fuel cell [22] and secondary battery materials [23]. 

An actual example of an extended application with technological potential is the organic and non-volatile memory, based on an OFET. The main advantage of a non-volatile memory is that its information is maintained during the readout procedure (non-destructive readout, NDRO). A ferroelectric polymer is introduced as a dielectric layer in the OFET. Due to the ferroelectric alignment of dipoles the threshold voltage of the transistor is affected by their dipole moments and can be used as stored information. 

As an example for depth profiling of interfaces, we present an XPS investigation of the ferroelectric copolymer P(VDF-TrFE). This material opens an opportunity for organic non-volatile memories. A prerequisite for low operation voltages is a downscaling of the film thickness, where interface phenomena between the electrode and the copolymer become important. We eompare the two interfaces P(VDF-TrFE)/Al and P(VDF-TrFE)/PEDOT PSS. 

Recently, flash memory—used in mobile phones, MP3s, digital cameras, and USDs—is a non-volatile memory device that solved a weak point of DRAM device of volatile movement. NAND flash memory in business today is possible up to 2 gigabyte in integrated diagram. It has a characteristic of action at high supply voltage of 10 to 15V. 

Phase-change random access memory (PRAM) has been intensively studied as one of the candidates of a non-volatile memory to challenge conventional memories such as DRAM and flash memory, due to its fast... 

Recently, in the new ReRAM non-volatile memory, a nickel oxide film with titanium (Ti NiO) was doped to increase voltage for memory erasures. Operations required only 5 ns, about 10,000 times faster than before, and with resistance fluctuations reduced to 1/10 that of conventional ReRAMs. Optimizing the voltage applied to a transistor reduced the current need to erase memory to <100 pA. 

The prototype ReRAM device offers low fluctuation of resistance value even during high-speed operation. The ReRAM technology "is amenable to miniaturization and can be manufactured inexpensively," so it is seen as an alternative to flash, the company explained. "If further minute non-volatile memory can be realized using ReRAM, there is potential for higher performance of mobile devices."... 

Nanoscale memory elements created for radiation hard, non-volatile memory (using gigantic magnetoresistance technology) have displayed sensitivity to the... 

Some readers have inbuilt volatile memory to retain a certain number of tag IDs. 

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