DRAM devices

Drakkar Noir Dramamine DRAM cells DRAM devices Draperies Drawdown Drawing molten glass Draw-texturing Drew-Pfitzner ligands Dried algae meal Driente Driers... 

Drakkar Noir Dramamme DRAM cells DRAM devices... 

Figure 1. Reduction of minimum feature size and increase in the number of components per chip as a function of date of introduction into manufacture for DRAM devices.

Microcircuitry has been made possible by our ability to use chemical reactions and processes to fabricate millions of electronic components or elements simultaneously on a single substrate, in this case, silicon. For example, a 1-million-bit DRAM device contains 1.4 million transistors and 1 million capacitors. Many of the chemically etched features on the chip are as small as 0.9 pm, and this dimension will decrease to below 0.5 pm in the next five years. 

The use of iodate and periodic acid as oxidizers for noble metal CMP has also been attempted. Similar to W CMP, a surface oxidation or modification is required for the subsequent removal by mechanical force. For example, the potential use of ruthenium as bottom electrode capacitor for next-generation DRAM devices [40] has been explored. Owing to the fact that a dry-etch process can lead to the formation of toxic RUO4 [41], the possibility of using CMP to implement Ru has gained interest recently. The studies in this area have indicated that the formation of stable passive layers such as RUO2 [41,42] and RU2O5 [42] are important steps in the Ru CMP. 

The electrical characteristics of the films should produce stable operation of DRAM devices. The most important electrical properties are a small t, all dielectric loss and low leakage... 

This increase in circuit density is made possible only by decreasing the minimum feature size on the chip. Figure 2 illustrates the decrease in minimum feature size as a function of time for dynamic random access memory (DRAM) devices. In 1975, the 4-kilobit DRAM (4 X 10 memory cells or about 8.2 X 10 transistors) had features in the 7-9-(xm range, and by 1987,... 

Figure 2. Minimum feature size as a function of time for DRAM devices.

The dynamic random access memory (DRAM) device, a two-element circuit, was invented by Dennard in 1967. The DRAM cell contains one MOSFET and one charge-storage capacitor. The MOSFET functions as a switch to charge or discharge the capacitor. Although a DRAM is volatile and consumes relatively high power, it is expected that DRAMs will continue to be the semiconductor memory of choice for nonportable electronic systems in the foreseeable future. ... 

There exist applications where the traditional hard mask can be left in place without any adverse effect on the performance of the device. For instance, in DRAM devices, SiON can be left on the gate layer, where it can serve as part of the self-aligning sequence of the storage cell and bit line contacts. It must be... 

Recently, flash memory—used in mobile phones, MP3s, digital cameras, and USDs—is a non-volatile memory device that solved a weak point of DRAM device of volatile movement. NAND flash memory in business today is possible up to 2 gigabyte in integrated diagram. It has a characteristic of action at high supply voltage of 10 to 15V. 

There is an increasing amount of li t sensitive opto-devioes that need UV-VIS protection. Alpha particle radiation is caused by a very low level of uranium and cosmic radiation present as background radiation in the device package and the atmosphere, respectively, and which could generate a temporary soft error in operating dynamic random access memory (DRAM), such as the 64 K, 256 K, 1 and 4 Megabits DRAM devices. This type of alpha particle radiation has become a major concern, especially in high density memory devices. 

The revolutionary development in miniaturization becomes evident by realizing that the storage capacity of dynamic random access memory (DRAM) devices has been increased from 4 Megabit (1 Mb = 10 bit) to several Gigabit (1 Gb = 10 bit). 

---