Transparent Oxide Thin Film Transistors

Nomura, K. Ohta, H. Takagi, A. Kamiya, T. Hirano, M. Hosono, H. 2004. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432 488-492. 

Guo Y, Yu G, Liu Y (2010) Functional organic field-effect transistors. Adv Mater 22 4427-4447 Hasegawa T, Takeya J (2009) Organic field-effect transistors using single crystals. Sci Technol Adv Mater 10(2) 024314 He Q, Wu S, Gao S, Cao X, YinZ, Li H, Chen P, Zhang H (2011) Transparent, flexible, all-reduced graphene oxide thin film transistors. ACS Nano 5 5038-5044... 

Chiang, H. Q. Wager, J. F. Hoffman, R. L. Jeong, J. Keszler, D. A. 2005. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86 013503/1-013503/3. 

Recently, field-effect transistors based on zinc oxide were reported [173,174], opening the opportunity to design microelectronic devices that are transparent and/or work at high temperatures [175]. More details on thin film transistors employing transparent conducting oxides are given in Chap. 2. 

New developments relating to the manufacture of thin film transistors (TFT) are being reported from Japan where the Tokyo Institute of Technology has developed a flexible, transparent device on a PETP substrate. This TFT comprises an amorphous oxide semiconductor, which serves as the active layer, and which is made from indium, gallium and zinc oxide deposited by laser ablation to a thickness of 30-60 nm. The TFT, with its transparent electrodes and circuitry, is manufactured in a vacuum at a temperature of 150 "C or less. Because of this low processing temperature it is possible to use low cost PET film, with a thickness of 200 pm, as a substrate thereby enabling transistors to be manufactured at a relatively low cost. 

Transparent Conducting Oxides and Thin-Film Transistors... 

Transparent thin-film transistors with zinc indium oxide channel layer. Journal of Applied Physics, 97, 064505. 

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