Flexible thin-film transistors, using

Nomura, K. Ohta, H. Takagi, A. Kamiya, T. Hirano, M. Hosono, H. 2004. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432 488-492. 

FLEXIBLE THIN-FILM TRANSISTORS THAT USE ps-Sc ON PLASTIC... 

Flexible Thin-Film Transistors that Use ps-Sc on Plastic 426... 

Tseng, S.H., Tai, N.H., 2009. Fabrication of a transparent and flexible thin film transistor based on single-wahed carbon nanotubes using the direct transfer method. Apphed Physics Letters 95, 204104. 

Cao, Q. et al. 2006. Transparent flexible organic thin-film transistors that use printed single-walled carbon nanotube electrodes. Appl. Phys. Lett. 88 113511. 

Organic thin film transistors are fabricated with a low-temperature process. It is therefore possible to fabricate TFT arrays for flat panel displays in a low cost process. The substrates are low-cost and flexible such as polyethylene terepthalate (PET). The low cost, large area TFT arrays can be used for many applications, e.g. electronic paper, smart cards and remotely updateable posters and notice boards. Currently the amorphous-silicon-on-glass technology is used for such applications. This technology is very expensive. These applications will only become popular in marketplace if the cost of production is substantially reduced. This is the driving force for the R D effort in organic TFTs. 

Another major technology area that can utflize conductive IJ ink is the display market. Inkjet can be applied for both flexible and rigid displays such as electroluminescent and electrophoretic displays (including e-paper), hquid crystal displays (LCD), plasma display panels (PDP) and touch screens some functionalities have already been printed by IJ technology in certain display apphcations, for example RGB color filters. Conductive IJ is also appropriate for use in thin film transistors (TFT), disposable batteries, radio-frequency identification (RFID) tags, and a range of chemical and electronic sensors. 

Kawase et al. [17] fabricated All-polymer thin film transistors by inkjet printing technique. They used these transistors as active-matrix backplane for information displays. This field has been dominated by amorphous Si TFTs and large liquid crystal displays with an amorphous Si TFT active matrix backplane have been manufactured at a reasonable cost. An organic TFT is expected to reduce the cost even more, and to be applied to flexible displays based on a plastic substrate. The TFT characteristics required for active-matrix displays are (1) sufficient drain cmrent, (2) low off current, (3) low gate leakage current through an insulator, (4) small gate overlap capacitance and (5) uniform characteristics. 

For all-printed thin film transistors (TFT), various organic and inorganic metal electrode materials, such as conductive polymer, carbon nanotube (CNT), organic metal compound, or metal nano-particles, have been used as gate and source/drain electrodes [6-11] in a combination with inkjet- and laser-based printing methods. One of the immediate applications for all-printed TFT would be flexible or rugged display backplane and disposable radio frequency identification (RFID) tags. In addition, printed metal electrodes and TFT have also been used to fabricate passive circuit components, power transmission sheets and sensors for ambient electronics and electronic skin [12-13]. 

Flexible Sensor Array for a Robotic Fingertip Using Organic Thin Film Transistors (OTFT) with Minimum Interconnects and Improved Noise Tolerance... 

Guo Y, Yu G, Liu Y (2010) Functional organic field-effect transistors. Adv Mater 22 4427-4447 Hasegawa T, Takeya J (2009) Organic field-effect transistors using single crystals. Sci Technol Adv Mater 10(2) 024314 He Q, Wu S, Gao S, Cao X, YinZ, Li H, Chen P, Zhang H (2011) Transparent, flexible, all-reduced graphene oxide thin film transistors. ACS Nano 5 5038-5044... 

New developments relating to the manufacture of thin film transistors (TFT) are being reported from Japan where the Tokyo Institute of Technology has developed a flexible, transparent device on a PETP substrate. This TFT comprises an amorphous oxide semiconductor, which serves as the active layer, and which is made from indium, gallium and zinc oxide deposited by laser ablation to a thickness of 30-60 nm. The TFT, with its transparent electrodes and circuitry, is manufactured in a vacuum at a temperature of 150 "C or less. Because of this low processing temperature it is possible to use low cost PET film, with a thickness of 200 pm, as a substrate thereby enabling transistors to be manufactured at a relatively low cost. 

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