Transparent Conducting Oxides and Thin-Film Transistors

Transparent Conducting Oxides and Thin-Film Transistors 

Dopant Dopant content (wt%) Resistivity (xlO- acm) Carrier concentration (x10 cm ) 

Another key issue for ZnO TFTs is the selection of the gate insulator. Various gate dielectric materials have been tested for ZnO-based TFTs, such as Si02 [162], Hf02 [169], PbZrTiO [185], ZnMgO [186], and Y2O3 [184]. As an example, TTFTs with transparent oxide semiconductor ZnO serving as the electron channel and 

Transparent nature of ZnO, potential achievement of low-cost polycrystalline ZnO, and fabrication technologies that are amenable to thin-film transistor production appear to suggest that ZnO may find a niche application in transparent thin-film technologies with added features over the Si-based varieties. 

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