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Transistors high-performance

Lee, S. Koo, B. Park, J.-G. Moon, H. Hahn, J. Kim, J. M. 2006. Development of high-performance organic thin-film transistors for large-area displays. MRS Bull. 31 455 459. [Pg.28]

Afentakis, T. Hatalis, M. Voutsas, A. T. Hartzell, J. 2006. Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils. IEEE Trans. Electron Dev. 53 815-822. [Pg.30]

Ju, S. Lee, K. Yoon, M.-H. Facchetti, A. Marks, T. J. Janes, D. B. 2007. High performance ZnO nanowire field effect transistors with organic gate nanodielec-... [Pg.30]

Carcia, R F. McLean, R. S. Reilly, M. H. 2006. High performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl. Phys. Lett. 88 123509/1-123509/3. [Pg.127]

Wang, L. Yoon, M-H. Lu, G. Yang, Yu Facchetti, A. Marks, T. J. 2006. High-performance transparent inorganic-organic hybrid thin-film n-type transistors. Nat. Mater. 5 893-900. [Pg.128]

Lin, H. C. Ye, P. D. Xuan, Y. Lu, G. Facchetti, A. Marks T. J. 2006. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodiclcctrics. Appl.. Phys. Lett. 89 142101/1-142101/3. [Pg.128]

Cui, Y. Zhong, Z. Wang, D. Wang, W. U. Lieber, C. M. 2003. High performance silicon nanowire field effect transistors. Nano Lett. 3 149-152. [Pg.340]

Wu, Y. Li, Y. Ong, B. S. Liu, E Gardner, S. 2005. High-performance organic thin-film transistors with solution-printed gold contacts. Adv. Mater. 17 184-187. [Pg.343]

Sun, B. Sirringhaus, H. 2006. Surface tension and fluid flow driven self-assembly of ordered ZnO nanorod films for high-performance field effect transistors. /. Am. Chem. Soc. 128 16231-16237. [Pg.345]

Duan, X. Niu, C. Sahi, V. Chen, J. Parce, J. W. Empedocles, S. Goldman, J. L. 2003. High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 425 274-278. [Pg.346]

Hara, A. Takei, M. Takeuchi, F. Suga, K. Yoshino, K. Chida, M. Kakehi, T. Ebiko, Y. Sano, Y. Sasaki, N. 2004. High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization. Jpn. J. Appl. Phys., Pt. 1 43 1269-1276. [Pg.376]

Menard, E. Lee, K. J. Khang, D. Y. Nuzzo, R. G. Rogers, J. A. 2004. A printable form of silicon for high performance thin film transistors on plastic substrates. Appl. Phys. Lett. 84 5398-5400. [Pg.377]

Bao, Z. Feng, Y. Dodabalapur, A. Raju, V. Lovinger, A. 1997. High-performance plastic transistors fabricated by printing techniques. Chem. Mater. [Pg.402]

Rogers, J. Bao, Z. Makhija, A. Braun, P. 1999. Printing process suitable for reel-to-reel production of high-performance organic transistors and circuits. Adv. Mater 11 741-745. [Pg.402]

Ong, B. Wu, Y. Liu, P. 2005. Design of high-performance regioregular polythiophenes for organic thin-film transistors. Proc. IEEE 93 1412-1419. [Pg.403]

Wu, H. Liu, J. Shi, J. Spencer, M. 2006. Thin film transistor using GaN nanoparticles. Presented at the 2006 Lester Eastman Conference on High-Performance Devices, Ithaca, NY Aug. 3, 2006. [Pg.403]

Afzali, A. Dimitrakopoulos, C. D. Breen,T. L. 2002. High-performance, solution processed organic thin film transistors from a novel pentacene precursor. J. Amer. Chem. Soc. 124 8812-8813. [Pg.442]

Lee, K. J. et al. 2005. Large-area, selective transfer of microstructured silicon A printing-based approach to high-performance thin-film transistors supported on flexible substrates. Adv. Mater. 17 2332-2336. [Pg.444]

The power bank contains an adequate number (generally several tens) of linear solid-state power devices, such as transistors or power Mosfets. Because of the availability of modern power Mosfets that combine high performance with easy control, classical transistors are nowadays no longer used in applications of this type (in our case, we use channel-N and channel-P Mosfets for the positive and negative power supply sections, respectively). [Pg.427]

Ebata H, Izawa T, Miyazaki E, Takimiya K, Ikeda M, Kuwabara H, Yui T (2007) Highly soluble [l]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors. J Am Chem Soc 129 15732-15733... [Pg.111]

Kang MJ, Doi 1, Mori H, Miyazaki E, Takimiya K, Ikeda M, Kuwabara H (2011) Alkylated dinaphtho[2,3-b 2, 3 -f]thieno[3,2-b]thiophenes (C -DNTTs) organic semiconductors for high-performance thin-film transistors. Adv Mater 23 1222-1225... [Pg.111]

Javey A, Tu R, Farmer DB et al (2005) High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Lett 5 345-348... [Pg.169]

Ding L, Wang S, Zhang Z et al (2009) Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors scaling and comparison with Sc-contacted devices. Nano Lett 9 4209-4214... [Pg.169]

Rosenblatt S, Yaish Y, Park J et al (2002) High performance electrolyte gated carbon nanotube transistors. Nano Lett 2 869-872... [Pg.169]

Katsura T, Yamamoto Y, Maehashi K et al (2008) High-performance carbon nanotube field-effect transistors with local electrolyte gates. Jpn J Appl Phys 47 2060-2063... [Pg.169]

Kymissis I, Dimitrakopoulos CD, Purushshothaman S (2001) High-performance bottom electrode organic thin-film transistors. IEEE Trans Electron Dev 48 1060-1064... [Pg.235]


See other pages where Transistors high-performance is mentioned: [Pg.245]    [Pg.125]    [Pg.6]    [Pg.12]    [Pg.110]    [Pg.127]    [Pg.333]    [Pg.366]    [Pg.372]    [Pg.375]    [Pg.409]    [Pg.410]    [Pg.426]    [Pg.442]    [Pg.511]    [Pg.278]    [Pg.179]    [Pg.245]    [Pg.330]   
See also in sourсe #XX -- [ Pg.109 , Pg.110 ]




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