Thin-film silicon transistor

Kane, M. G. Goodman, L. Firester, A. H. van der Wilt, P. C. Limanov, A. B. Im, J. S. 2005.100MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic. IEEE International Electron Devices Meeting Tech. Digest 2005 1087-1089. 

Kuo, Y. (Editor). 2004. Thin-Film Transistors Materials and Processes, Amorphous Silicon Thin-Film Transistors, Polycrystalline Silicon Thin Transistors. Kluwer, New York. 

Afentakis, T. Hatalis, M. Voutsas, A. T. Hartzell, J. 2006. Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils. IEEE Trans. Electron Dev. 53 815-822. 

Hara, A. Takei, M. Takeuchi, F. Suga, K. Yoshino, K. Chida, M. Kakehi, T. Ebiko, Y. Sano, Y. Sasaki, N. 2004. High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization. Jpn. J. Appl. Phys., Pt. 1 43 1269-1276. 

Hong, C. Wagner, S. 2000. Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors. IEEE Electron Dev. Lett. 21 384-386. 

Menard, E. Nuzzo, R. G. Rogers, J. A. 2005. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates. Appl. Phys. Lett. 86 093507. 

MJ Powell, C van Berkel, and JR Hughes, Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors, Appl. Phys. Lett., 54 1323-1325, 1989. 

Amorphous Silicon Thin-Film Transistor Active-Matrix Organic Light-Emitting Displays... 

J. Kanicki and S. Martin, Hydrogenated amorphous silicon thin-film transistors, in Thin-Film Transistors, C.R. Kagan and P. Andry, Eds., Marcel Dekker, New York, 2003. 

J.-H. Kim and J. Kanicki, Amorphous silicon thin-film transistors-based active-matrix organic light-emitting displays, SID Tech. Dig., 614—617, 2002. 

Y. Hong, J.-Y. Nahm, and J. Kanicki, Opto-electrical properties of 200 dpi four amorphous silicon thin-film transistors active-matrix organic polymer light-emitting display, Appl. Phys. Lett., 83, 3233-3235, 2003. 

At this stage, a technique that would enable independent access to the channel and contact resistances is needed. Such a feature is offered by the transfer line method (TLM) [38-41, 89], a method adapted from a classical technique use to estimate contact resistance, and first developed for the amorphous silicon thin-film transistor [42]. The method consists of measuring the channel resistance for different channel lengths. The measured resistance is actually the sum of the channel and contact resistances. As long as the measurement is performed in the linear regime (small drain voltage) the channel resistance is proportional to L (see Eq. 1) and the width-normalized (Rx W) total resistance is given by ... 

Active-matrix displays differ from the aforementioned displays in that they have a switch incorporated into each pixel (Tsukada 2000). This removes the limitations encountered in passive matrix displays but requires more sophisticated processing equipment to be used. The dominant pixel switch technology is the amorphous silicon thin-film transistor (TFT) on glass (Tsukada 2000), although other technology... 

Y. Kuo in Thin Film Transistors - Materials and Processes Volume 1 Amorphous Silicon Thin Film Transistors, Kluwer Academic Publishers, 2004. 

In this paper, hydrogenated amorphous silicon thin film transistors (a-Si H TFTs) fabricated on a metal foil substrate is reported for active matrix OLEDs (AMOLEDs) displays. The electrical properties of a-Si H TFTs fabricated on a metal foil substrate are introduced. To increase the stability of a-Si H TFTs fabricated at low temperature on a metal foil substrate, negative bias applied to metal foil substrate can also recover the shifted threshold voltage during idle time. A new cathode-contact structure employing a normal top-emitting OLED, which is suited to n-type a-Si H TFT backplane is proposed. 

Hiranaka, K. Yoshimura, T. Yamaguchi, T. (1989). Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors, pn.. Appl. Phys., Vol. 28, 2197-2200, ISSN 0021-4922... 

Hong, Y. T. Heiler, G. Kerr, R. Kattamis, A. Z. Cheng, I. C. Wagner, S. (2006) Amorphous Silicon Thin-Film Transistor Backplane on Stainless Steel Foil Substrate for AMOLEDs, Proceedings of SID Symposium, Vol. 37, pp.1862-1865, San Francisco, C A, June 2006, SID, San Jose, C A, ISSN 006-966x... 

Lim, B. C. Choi, Y. J. Choi, J. H. Jang, J. (2000). Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Plasma Treated Silicon Nitride, IEEE Trans. Electron Device, Vol. 47,367-371, ISSN 0018-9383... 

Tsujimura, T. (2004). Amorphous/Microciystalline Silicon Thin Film Transistor Characteristics for Large Size OLED Television Driving, fpn. J. Appl. Phys., VoL 43, 5122-5128, ISSN 0021A922... 

Relative importance of the Si-Si bond and Si-H bond for the stabiUty of amorphous silicon thin film transistors, /. Appl. Phys., Vol. 87,144-154, ISSN 0021-8979... 

R. Schwarz, F. Wang and M. Reissner, Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors, Applied Physics Letters, 63(8), 1083-1085 (1993). 

Wong, W.S. et al., Amorphons silicon thin-film transistors and arrays fabricated by jet printing, App. Phys. Lett. 80, 610-612, 2002. 

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