Transistor performance

Bottom-gate, bottom-contact OFET devices were fabricated from pBTTT polymer solutions and hole 

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For the past 30 years, the semiconductor industry has followed Moore s law, which states that transistor performance and density double every 3 years (1). Although not truly a law, Gordon Moore s statement has yet to be violated. But now it seems to be in serious danger. Fundamental thermodjmamic limits are being reached in critical areas, and unless new. 

The transistor performance is generally characterized by field-effect transistor (FET) mobility (j i), current on/off ratio (f n/f0ff), and threshold voltage (Vj)-... 

The drain current Id is proportional to the charge-carrier mobility the transistor dimensions, where W and L are the channel width and length respectively, the applied voltage, where Vgs and VT are the gate-source and threshold voltage, and the insulator capacitance Cj (Eq. 1). Thus, the impact of the dielectric material on transistor performance is given by the dielectric capacitance which results from a geometrical quotient of area A and distance d (distance is the film thickness of the dielectric layer) and a material factor where s0 and er are the dielectric constant in a vacuum and of the material, respectively (Eq. 2). As consequences of these correla-... 

No consensus has yet been reached as to what constitutes the optimum design of display transistors. This is not surprising, since the optimum design is not one that maximizes individual transistor performance, but rather one that simplifies processing and maximizes the number of functioning devices. 

Examining a typical RFID tag, several points of note are apparent. The first point is that the size of the tag is dominated by the antenna, which is printed at a relatively low resolution the size of the circuitry is a relatively small fraction of the overall tag size. The second point is that the cost scaling of silicon-based RFID is hmited by the cost of attaching the tiny silicon chip to the antenna thus, silicon-based RFID only benefits partially from cost reduction in the silicon microelectronics industry. The third point is that the transistor performance requirements for simple RF barcodes are not outrageous, and are potentially in the range of what is achievable using printed electronics. 

To see how high-fe oxides impact the transistor performance, one can look at the equation for the drain current of an MOS transistor [11] ... 

At larger seales the measurement of potential gives information on the homogeneity of the transistor structure, especially the spin-coated P3HT layer and, in consequence, the related transistor performance. The curvature observed in Figure 21.4b could be caused by variations in thickness of the P3HT-layer a thicker layer of the spin-coated semiconductor should generate a smal-... 

Chang, PC., Lee, J., Huang, D., Subramanian, V., Murphy, A.R. and Frechet, J.M.J., Film morphology and thin fihn transistor performance of solution-processed oligoth-iophenes, Chem. Mater, 16, 4783 789, 2004. 

Schroeder, R., Majewski, L.A., and Grell, M., Improving organic transistor performance with Schottky contacts, Appl. Phys. Lett., 84, 1004, 2004. 

Design, Synthesis, and Transistor Performance of Organic Semiconductors 161... 

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