Thin-film transistor characteristics

Rashmi, V.R. Balakrishnan, A.K. Kapoor, V. Kumar, S.C. Jain, R. Mertens, S. An-napoorni, Effect of field dependent trap occupancy on organic thin film transistor characteristics, J. Appl. Phys. 94 (2003) 5302-5306. 

Tsujimura, T. (2004). Amorphous/Microciystalline Silicon Thin Film Transistor Characteristics for Large Size OLED Television Driving, fpn. J. Appl. Phys., VoL 43, 5122-5128, ISSN 0021A922... 

D. M. DeLongchamp and M. Chabinyc, The influence of molecular weight on the microstructure and thin film transistor characteristics of pBTTT polymers. Proc. SPIE, 6336, 158-163 (2006). 

Figure 10.13. (a) SEM image of ZnO nanorods coated with octylamine. Scale bar, 200 nm. (b) Uniform nanorod film fabricated by spin coating of ZnO nanorods. Scale bar, 500 nm. The nanorods assemble into domains with nematic ordering, (c) Saturated transfer characteristics for a thin-film transistor fabricated by spin coating of ZnO nanorods with different ligands octylamine (solid line), butylamine (dashed line). Vi = 60V. (d) Output characteristics of a spin-coated device made from octylamine-stabilized ZnO nanorods.The device structure is shown in the inset in (c). Reproduced from Ref. 83, Copyright 2006, with permission from the American Chemical Society. 

Thin-film Transistor Device Characteristics 11.3.3.1 a-Si H TFTs... 

Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, Stacked pentacene layer organic thin-film transistors with improved characteristics, IEEE Electr. Device L. 1997, 18, 606-608. 

Francis Gamier [3, and references given therein] fabricated the first transistor using molecules of sexithiophene. The transistor could be twisted, bent or rolled without degrading its characteristics. Computers fabricated using these devices will work at less than one thousandth of the speed of those made with amorphous Si transistors. They would be useful in video displays and liquid-crystal displays. In active matrix displays, each pixel is controlled individually by a thin film transistor. A 50 cm full color display contains more than two million pixels. Organic transistors, considerably cheaper than the amorphous Si transistors being used at present, will be a boon to the manufacturers. 

F. De Angelis, L. Mariucci, S. Cipolloni, G. Fortunato, Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer, Journal of Non-Crystalline Solids 352 (2006) 1765-1768. 

Kawase et al. [17] fabricated All-polymer thin film transistors by inkjet printing technique. They used these transistors as active-matrix backplane for information displays. This field has been dominated by amorphous Si TFTs and large liquid crystal displays with an amorphous Si TFT active matrix backplane have been manufactured at a reasonable cost. An organic TFT is expected to reduce the cost even more, and to be applied to flexible displays based on a plastic substrate. The TFT characteristics required for active-matrix displays are (1) sufficient drain cmrent, (2) low off current, (3) low gate leakage current through an insulator, (4) small gate overlap capacitance and (5) uniform characteristics. 

Unlike thin film transistors, electroluminescence devices operate in a high electric field, and therefore homogeneity and low defect density of the thin films are more important than the carrier transport characteristics. In this sense, the approach to the use of nematic semiconductors by Kelly and O Neill should be reasonable. 

FIGURE 5.5.12 (a) Current-voltage characteristics of pentacene thin-film transistors whose gold electrodes were printed by nTP. Inset saturated source-drain current as a function of gate voltage (W/L = 8). (b) Switching characteristics of a complementary inverter circuit whose gold electrodes were printed by nTP. (From Y.-L. Loo et al., Appl. Phys. Lett, 81, 562, 2002.)... 

Max Shtein, Jonathan Mapel, Jay B. Benziger, and Stephen R. Forrest. Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors. Applied Physics Letters, 81(2) 268-270, 2002. 

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