Switching characteristic

A slight variant of the classic twisted nematic display has been iatroduced due to its wider viewiag angle and improved switching characteristics. 

The EMI characteristics will change appreciably only if the switcher IC used has soft-switching characteristics... 

Fig. 5.18 Dropping the reed switch on a hard surface can induce several 100 Gs to the contacts many times altering the switch characteristics.

C. Canalias, J. Hirohashi, V. Pasiskevicius, and F. Laurell, Polarization switching characteristics of flux grown KTi0P04 and RbTi0P04 at room temperature, Applied Physics Letters (submitted), (2005). 

The first report of an all-SiC, three-phase dc-ac inverter was presented by Seshadri et al. [17] in 1999. Although Seshadri s inverter used SiG GTOs and p-/-n diodes, it was operated at ambient temperature and at voltage and current levels so low that the authors were unable to ...determine typical switching characteristics of the individual SiG components. From the standpoint of technology development, there exists a need to evaluate SiC technology under relevant circuit stresses. 

Hefner, A., et ah, Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications, Conf. Record of the 2000 IEEE Industry Application Conf., Vol. 5, October 8-12, 2000, pp. 2948-2954. 

The fabrication of active semiconductor devices from amorphous semiconductor films is a further application that offers considerable advantages. Thin-fihn transistors, based on amorphous films of hydrogenated silicon, are nnder intensive development. Other devices with monostable and bistable switching characteristics have also received considerable interest. Naturally enough, the performance of snch devices is intimately related to the transport properties of charge carriers in the materials employed. 

Several exciting phenomena described for non-chiral nematic systems were also reported for nanoparticle-doped chiral nematic liquid crystals. We mentioned the work of Kobayashi et al., who, most notably, demonstrated a frequency modulation twisted nematic (FM-TN) mode and fast switching characteristics using metal nanoparticles as dopants [301-307, 313, 314],... 

The reason for these localized perturbations stems from a slight delay and asymmetry in the switching characteristics of the Pockels cell [75]. As a consequence, x (t) in Fig. 25 must be replaced by... 

S. R. Gilbert et al., Reliability and Switching Characteristics of Sub-Micron IrOxJmocvd Pb(Zr,Ti)03/Ir Capacitors, oral presentation isif, 2000. 

Figure 5.67 Cyclic voltammogram and frequency potential plot for [Os(bpy)2(PVP)ioCI ]CI in 0.1 M p-toluene sulfonic acid. The potential scan rate was 1 mV s with a surface coverage of 2.0 x 10-8 mol cm-2. A/ is frequency change. Reprinted from. Electroanal. Chem., 389, A. P. Clarke, J. G. Vos, A. R. Hillman and A. Glidle, Overall redox switching characteristics of osmium-containing poly(4-vinylpyridine) films immersed in aqueous p-toluene sulfonic acid, 129-140, Copyright (1995), with permission from Elsevier Science...

The explicit correlation between changes in the minority carrier life time for p -n diodes upon irradiations at different temperatures and changes in the concentration of vacancy and vacancy-oxygen complexes is established. The information obtained in the present work on the electronic parameters of the V 0 complexes and their introduction rates can be used for careful controlling the carrier lifetime and, therefore, the switching characteristics of silicon power devices. 

A change of the atmosphere has a remarkable effect on the switching characteristic. For devices with an oxide interlayer the removal of oxygen leads to a reversible loss of bistability. After testing them in ambient atmosphere to confirm their bistability, devices were placed into a vacuum recipient, which was evacuated to a pressure of 10 mbar. Subsequently, the I- V characteristic was taken in vacuo. No switching was observed. The oxide interlayer devices showed a nearly ohmic characteristic with currents comparable to the high conducting state. 

The experiments have shown that devices with tip-contacts from this set of metals can be separated into two groups, depending on the metal work function The first group with metals above 4.8 eV (Au, Pt, and Mo) shows a switching characteristic with regular polarity. The second group (Zn, Al, In, Zr) with 4.7 eV and below, switches at reverse polarity, with unreproducible results for W (4.6 eV). 

Other workers have shown that the use of copolymers of pyrrole with substituted pyrroles (/V-methylpyrrole, in this case) can be used to alter the switching potential.37 In our laboratories, studies involving a functionalized PPy38 have shown that the switching characteristics are markedly affected by the counteranion incorporated during the synthesis. Obviously, this counteranion effect can be amplified by the presence of certain substituents. 

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