Gate leakage current

Kawase et al. [17] fabricated All-polymer thin film transistors by inkjet printing technique. They used these transistors as active-matrix backplane for information displays. This field has been dominated by amorphous Si TFTs and large liquid crystal displays with an amorphous Si TFT active matrix backplane have been manufactured at a reasonable cost. An organic TFT is expected to reduce the cost even more, and to be applied to flexible displays based on a plastic substrate. The TFT characteristics required for active-matrix displays are (1) sufficient drain cmrent, (2) low off current, (3) low gate leakage current through an insulator, (4) small gate overlap capacitance and (5) uniform characteristics. 

First, it fixes the electrical time constant Te of the device. Second, it allows the gate leakage current of the PET to bias its operating point. If there was no bias resistor here, the FET amplifier would not be stable and would take a long time to settle. Third, it determines the voltage responsivity. 

Figure 2.5 Transfer characteristics of the fabricated OTFT. High gate leakage current reduced current of/off ratio. (W/L = 1000/40-60 j,m/ a,m)...

Figure 3.1. Gate leakage current density (Jg) versus gate voltage (Vg) curve of Au/La203/Si MIS capacitors with and without U V ozone post treatment...

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