Transistor, thin film output characteristics

Figure 10.13. (a) SEM image of ZnO nanorods coated with octylamine. Scale bar, 200 nm. (b) Uniform nanorod film fabricated by spin coating of ZnO nanorods. Scale bar, 500 nm. The nanorods assemble into domains with nematic ordering, (c) Saturated transfer characteristics for a thin-film transistor fabricated by spin coating of ZnO nanorods with different ligands octylamine (solid line), butylamine (dashed line). Vi = 60V. (d) Output characteristics of a spin-coated device made from octylamine-stabilized ZnO nanorods.The device structure is shown in the inset in (c). Reproduced from Ref. 83, Copyright 2006, with permission from the American Chemical Society. 

Flexible picene thin film field-effect transistors have been fabricated using a gate dielectric from poly(tetra-lluoro-/7-xylylene) on a poly(ethylene terephthalate) substrate [39]. These field-effect transistors show /I-channel output/transfer characteristics. A sensing effect for oxygen is observed. The hysteresis in the transfer curves is negligible. The parylene gate can eliminate a reduction in the drain current. 

Fig. 33. The pattern for drop-cast CP(Ni) displays no measurable peaks. Upon heating, numerous diffraction peaks indicative of the formation of crystal planes appear. OFETs output characteristics are shown in Fig. 34, the mobility of this transistor being of the order of 0.1 and 0.2 cm /Vs, which is the highest value among solution-processed OFETs using porphyrins or Pcs as semiconductors. OFETs based on TBP(Cu) exhibit a similar performance with the mobiUty of 0.1 cm /Vs. A polarized optical micrograph of a spim-cast TBP(Cu) thin film is shown in Fig. 35 and the polycrystalline nature of the TBP(Cu) thin films is displayed. The electrodes are 20 pm wide, indicating...

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