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Thick film oxidation

NL Li O. Thick film resistors are also made from transition-metal oxide soHd solutions. Glass-bonded Bi... [Pg.309]

Electronic Applications. The PGMs have a number of important and diverse appHcations in the electronics industry (30). The most widely used are palladium and mthenium. Palladium or palladium—silver thick-film pastes are used in multilayer ceramic capacitors and conductor inks for hybrid integrated circuits (qv). In multilayer ceramic capacitors, the termination electrodes are silver or a silver-rich Pd—Ag alloy. The internal electrodes use a palladium-rich Pd—Ag alloy. Palladium salts are increasingly used to plate edge connectors and lead frames of semiconductors (qv), as a cost-effective alternative to gold. In 1994, 45% of total mthenium demand was for use in mthenium oxide resistor pastes (see Electrical connectors). [Pg.173]

Miscellaneous. Ruthenium dioxide-based thick-film resistors have been used as secondary thermometers below I K (92). Ruthenium dioxide-coated anodes ate the most widely used anode for chlorine production (93). Ruthenium(IV) oxide and other compounds ate used in the electronics industry as resistor material in apphcations where thick-film technology is used to print electrical circuits (94) (see Electronic materials). Ruthenium electroplate has similar properties to those of rhodium, but is much less expensive. Electrolytes used for mthenium electroplating (95) include [Ru2Clg(OH2)2N] Na2[Ru(N02)4(N0)0H] [13859-66-0] and (NH 2P uds(NO)] [13820-58-1], Several photocatalytic cycles that generate... [Pg.178]

For a large number of applications involving ceramic materials, electrical conduction behavior is dorninant. In certain oxides, borides (see Boron compounds), nitrides (qv), and carbides (qv), metallic or fast ionic conduction may occur, making these materials useful in thick-film pastes, in fuel cell apphcations (see Fuel cells), or as electrodes for use over a wide temperature range. Superconductivity is also found in special ceramic oxides, and these materials are undergoing intensive research. Other classes of ceramic materials may behave as semiconductors (qv). These materials are used in many specialized apphcations including resistance heating elements and in devices such as rectifiers, photocells, varistors, and thermistors. [Pg.349]

FfCURE 13.54 Semiconductor gas sensors (o) tubular, (b) thick film, (e) bulk-type one-electrode sensor where a thin Pt wire spiral is embedded Inside a sintered oxide semiconductor button. ... [Pg.1311]

Anionic diffusion in the oxidation of a convex surface creates a situation which is the reverse of that just described. The oxide is in tension along planes parallel to the surface and fracture may be expected to occur readily in perpendicular directions and starting from the gas/metal interface. Although very thin films may have resistance to fracture, thick films frequently acquire the morphology shown in Fig. 1.83. [Pg.273]

The largest uses of platinum group metals in electronics are ruthenium for resistors and palladium for multilayer capacitors, both applied by thick film techniques . Most anodes for brine electrolysis are coated with mixed ruthenium and titanium oxide by thermal decomposition . Chemical vapour deposition of ruthenium was patented for use on cutting tools . [Pg.566]

Scale a thick visible oxide film formed during the high-temperature oxidation of a metal (the distinction between a film and a scale cannot be defined precisely). [Pg.1373]

Generally, such a remarkable restriction of metal dissolution results not only from the formation of a thin surface oxide film but also from the formation of a comparatively thick film such as silver chloride or zinc chloride. In this chapter, however, we use the term passive film only for compact and thin oxide films. [Pg.224]

This demand for new devices initiated worldwide research and development programs in the field of "sensors and actuators". Many generic sensor technologies were examined, from which the thin- and thick-film, glass fiber, metal oxides, polymers, quartz and silicon technologies are the most prominent. [Pg.406]

Thick anodic iridium oxide films are formed by repetitive potential cycling between properly chosen anodic and cathodic limits [89]. The coloration (bleaching) transition is reflected in the cyclic voltammogram by a significant increase (decrease) of the electrode pseudo-capacity at a potential around 0.7 Vsce in acid electrolytes. At potentials above 0.7 V the thick film appears dark blue, while below 0.7 V the film is almost clear. [Pg.109]

In the above considerations, the O/S interface was taken to be a clear-cut boundary between the oxide and the electrolyte. In reality, however, the outer part of the oxide is likely to be hydrated and penetrated by the electrolyte. Hence, the true O/S interface is likely to be withdrawn from the surface to a sufficient depth such that some oxide is left without any electric field imposed across it. This is especially true of thick porous oxide layers, but it can occur with compact layers as well. For example, Hurlen and Haug35 found a duplex film in acetate solution (pH 7-10), composed of a dry barrier-type part and a thicker hydrated part consisting of A1203 H20. Although the hydrated part becomes thinner with decreasing pH and seems to practically vanish at low pH, even a thickness of less than a nanometer is sufficient for the surface oxide to stay outside the electrochemical double layer. [Pg.415]

A similar catalytic activity with a monomeric porphyrin of iridium has been observed when adsorbed on a graphite electrode.381-383 It is believed that the active catalyst on the surface is a dimeric species formed by electrochemical oxidation at the beginning of the cathodic scan, since cofacial bisporphyrins of iridium are known to be efficient electrocatalysts for the tetraelectronic reduction of 02. In addition, some polymeric porphyrin coatings on electrode surfaces have been also reported to be active electroactive catalysts for H20 production, especially with adequately thick films or with a polypyrrole matrix.384-387... [Pg.494]

With respect to the UHV-based techniques capable of providing chemical analysis, such as ESCA, AUGER, etc., several such studies have been performed. However, these studies were, by and large, performed on very thick oxide layers, formed after anodic oxidation of the Pt for many hours. Results from these studies thus have little bearing on the nature of the oxides formed on potential cycling. Part of the reason why these studies used such thick films lies in the considerable difficulty of detecting the thin oxide films formed during a potential sweep, even with relatively sensitive techniques. [Pg.267]

A. Gac, J.K. Atkinson, Z. Zhang, CJ. Sexton, S.M. Lewis, C.P. Please, and R. Sion, Investigation of the fabrication parameters of thick film titanium oxide-PVC pH electrodes using experimental designs. Microelectronics Int. 21, 44—53 (2004). [Pg.324]

CO Resistive sensors pellistors, metal-oxide sensors Optical sensors micro-spectrometer, IR-sources, IR-detectors, IR-filters Hybrid or integrated, surface micromachining Sn02 sintered thick film (Figaro, FIS,. ..), Sn02 thin and thick film on silicon (MiCS, Microsens) IR spectroscopy (Vaisala, Honeywell,. ..)... [Pg.223]

Fig. 5.8 Thermal effusion of H20 and C02 from a 196 nm thick anodic oxide film for a temperature ramp from RT to 1100°C. After [Le22],... Fig. 5.8 Thermal effusion of H20 and C02 from a 196 nm thick anodic oxide film for a temperature ramp from RT to 1100°C. After [Le22],...
The sensitive layers that have been used throughout this book consist of nanocrystalline tin-oxide thick films. The resistance change is the result of a multitude of reactions taking place at the surface and in the bulk. This resistance change depends also on the morphology of the sensitive layer and the contact-electrode geometry. Due... [Pg.11]

The model analytes, which were used to show the sensor performance of the microsystems include carbon monoxide, CO, and methane, CH4. The sensor microsystems were designed for practical applications, such as environmental monitoring, industrial safety applications or household surveillance, which implies that oxygen and water vapors are present under normal operating conditions. In the following, a brief overview of the relevant gas sensor mechanisms focused on nano crystalline tin-oxide thick-film layers will be given. [Pg.12]


See other pages where Thick film oxidation is mentioned: [Pg.171]    [Pg.173]    [Pg.76]    [Pg.171]    [Pg.173]    [Pg.76]    [Pg.2725]    [Pg.314]    [Pg.253]    [Pg.51]    [Pg.357]    [Pg.335]    [Pg.156]    [Pg.26]    [Pg.237]    [Pg.665]    [Pg.102]    [Pg.380]    [Pg.147]    [Pg.169]    [Pg.492]    [Pg.397]    [Pg.85]    [Pg.248]    [Pg.299]    [Pg.90]    [Pg.216]    [Pg.444]    [Pg.4]    [Pg.10]    [Pg.11]    [Pg.43]   
See also in sourсe #XX -- [ Pg.167 ]




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Native oxide film thickness

Oxidation films

Oxidation oxide thickness

Oxide film thickness

Oxide film thickness

Oxide thickness

Profilometry oxide film thickness

Thick films

Thick-film zirconium oxide oxygen

Thick-film-based metal-oxide sensors

Thickness of oxide film formed

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