Temperature measurement diode

Alderman, J., Tustaniwskyi, and UseU, R. 1986. Die attach evaluation using test chips containing localized temperature measurement diodes. IEEE Trans. Comp., Hybrids, andManuf. Technol. 9(4) 410-415. 

A useftil applicadon of time-dependent PL is the assessment of the quality of thin III-V semiconductor alloy layers and interfaces, such as those used in the fabri-cadon of diode lasers. For example, at room temperature, a diode laser made with high-quality materials may show a slow decay of the acdve region PL over several ns, whereas in low-quality materials nonradiative centers (e.g., oxygen) at die cladding interface can rapidly deplete the free-carder population, resulting in much shorter decay times. Measurements of lifetime are significandy less dependent on external condidons than is the PL intensity. 

The subsequent development of laser diode sources at low cost, and improved electronic detection, coupled with new probe fabrication techniques have now opened up this field to higher-temperature measurement. This has resulted in an alexandrite fluorescence lifetime based fiber optic thermometer system,(38) with a visible laser diode as the excitation source which has achieved a measurement repeatability of l°C over the region from room temperature to 700°C, using the lifetime measurement technique. 

Baer, D. S., M. E. Newfield, N. Gopaul, and R. K. Hanson. 1994. Multiplexed diode-laser sensor system for simultaneous H2O, O2 and temperature measurements. Optics Letters 19(22) 1900-2. 

Hanson, R. K. and Kuntz-Falcone, P. A., "Temperature Measurement Technique for High-Temperature Gases Using a Tunable Diode Laser" Applied Optics, 1978, 17, 2477. 

A schematic view of a microdielectrometer sensor is shown in Fig. 8 and illustrates the electrode array, the field-effect transistors and a silicon diode temperature indicator 15) which functions as a moderate accuracy ( 2 °C) thermometer between room temperature and 250 °C. The sensor is used either by placing a small sample of resin over the electrodes, or by embedding the sensor in a reaction vessel or laminate. Since all dielectric and conductivity properties are temperature dependent, the ability to make a temperature measurement at the same point as the dielectric measurement is a useful feature of this technique. 

The module was first charged with 40.8 ml of deionized water at room temperature. Subsequently the pump was started and the flow rafe was set to the desired value. Thereafter, the internal pressure of the chamber was reduced by means of a vacuum pump. At steady-state chamber conditions, the vapor partial pressure was calculated, using steam tables, assuming the temperature measured in the chamber is equal to the vapor saturation temperature at the computed vapor partial pressure. Thereafter, power was supplied to the diode and the data were recorded. 

Xi Y., Schubert E. F. Junction-temperature measurements in GaN ultraviolet light-emitting diodes using diode forward voltage method Appl. Phys. Lett. 85, 2163... 

Xi Y., Xi J.-Q., Gessmann Th., Shah J. M., Kim J. K., Schubert E. F., Fisher A. J., Crawford M. H., Bogart K. H.A, Allerman A. A. Junction and carrier temperature measurements in deep ultraviolet light-emitting diodes using three different methods Appl. Phys. Lett. 86, 031907... 

Temperature sensors for providing closed-loop feedback for APFC are being developed by Stanford University for the measurement of combustion species and temperature. Laser-diode sensors offer nonintrusive measurements of the combustion exit plane temperature pattern. A detailed description of the sensor measurement methodology can be found in the literature [1, 2]. There is... 

Jenkins, T. R, and Bergmans, J. L. "Diode Laser Temperature Measurements." In Industrial Combustion Testing, edited by C. E. Baukal. Boca Raton, FL Taylor Francis, 2010. 

Several existing instruments, including suction pyrometers, IR spectrometers, and acoustic pyrometers are already in regular use for combustion gas temperature measurement. However, conventional sensors are often subject to errors due to disturbances caused by the presence of the probe, ill-defined spatial resolution, and slow response time. Tunable Diode Laser (TDL) absorption spectroscopy seeks to overcome limitations sometimes associated with these traditional instruments. This technique is of particular interest for industrial combustion applications since it provides the following features ... 

Absorption ratio and pyrometer temperature measurements. Time histories (L) (Lighter Traces 30 second average. Darker Traces 30 minute moving average) (Reprinted from Teichert, H., Fernholz, T, and Ebert, V., "Simultaneous In Situ Measurement of CO, H2O, and Gas Temperatures in a Full-Sized Coal-Fired Power Plant by Near-Infrared Diode Lasers," Applied Optics 42,2043-51,2003. With permission.) and temperature versus absorption rate (R). 

K. L. M. "Multiplexed Diode-Laser Sensor System for Simultaneous HjO, Oj, and Temperature Measurements." Applied Optics 33 (1994) 3296-3306. 

Jenkins, T. P, DeBarber, P A., Shen, J., and McDonell, V. G. 2003B. "Time-Resolved In-Situ Temperature Measurements in a Model Industrial Burner Using a Tunable Diode Laser." Paper presented at the 2003 Western States Section/Combustion Institute, October 20-21, University of California, LA, 2003b. 

W. E. Gamer (Bristol) Dr. F. C. Tompkins (London) asked me to inform the Congress of the following results obtained on surface potentials by the space-charge diode method. The films were thrown at —183° and sintered at various temperatures. Measurements of AF were made at -183°. 

For measuring the resistivity of the films as a function of temperature, a continuous flow cryostat (Oxford Inst. Model CF-1204) with a temperature controller was used. The details of the sample preparation and measurement have been described previously (3). A temperature controlled silicon diode ( 0.1 K) was mounted next to the sample for accurate temperature measurement. X-ray powder diffraction patterns were obtained using a computerized Phillips powder diffractometer (Type AFD 3520) with Ni-filtered CuKa radiaticm. 

The picosecond laser system was essentially as described in (4), except the detection apparatus consisted of a pair of monochromators coupled to diode arrays. Laser excitation was in the 600-nm band. Low-temperature measurements were made on samples in polyvinyl alcohol films (PVA). ... 

M. Alden, P. Grafstrdm, H. Lundberg, S. Svanberg Spatially resolved temperature measurements in a flame using laser-excited two-line atomic fluorescence and diode-array detection. Opt. Lett. 8, 241 (1983)... 

As basic sensor a pH-l FET chip was developed which can be used for different ISM depositions. It contains a dual ISFET structure (n-channel FET, LP-CVD Si3N4 gate membrane, gate size 16 x 400 pm) and a temperature sensitive diode. The chip is fabricated in a standard MOS>production line. For using the chip in a ISFET difference measuring mode without a conventional reference electrode an integrated pseudo reference electrode has been designed too. 

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