Stimulated emission transition

The rate at which stimulated emission transitions from state j to state i are induced is given by... 

For themial light, the iiumber of transitions per second induced by stimulated emission integrated over solid angles, is equal to The total emission, which is the sum of the stimulated and spontaneous emission, may be obtained by letting A A + 1 in the expression for stimulated emission, giving... 

Figure Al.6.21. Bra and ket wavepacket dynamics which detennine the coherence overlap, (( ) ( ) ). Vertical arrows mark the transitions between electronic states and horizontal arrows indicate free propagation on the potential surface. Full curves are used for the ket wavepacket, while dashed curves indicate the bra wavepacket. (a) Stimulated emission, (b) Excited state (transient) absorption (from [41]).

Einstein derived the relationship between spontaneous emission rate and the absorption intensity or stimulated emission rate in 1917 using a thennodynamic argument [13]. Both absorption intensity and emission rate depend on the transition moment integral of equation (B 1.1.1). so that gives us a way to relate them. The symbol A is often used for the rate constant for emission it is sometimes called the Einstein A coefficient. For emission in the gas phase from a state to a lower state j we can write... 

The fluorescence signal is linearly proportional to the fraction/of molecules excited. The absorption rate and the stimulated emission rate 1 2 are proportional to the laser power. In the limit of low laser power,/is proportional to the laser power, while this is no longer true at high powers 1 2 <42 j). Care must thus be taken in a laser fluorescence experiment to be sure that one is operating in the linear regime, or that proper account of saturation effects is taken, since transitions with different strengdis reach saturation at different laser powers. 

The light emitted in the spontaneous recombination process can leave tire semiconductor, be absorbed or cause additional transitions by stimulating electrons in tire CB to make a transition to tire VB. In tliis stimulated recombination process anotlier photon is emitted. The rate of stimulated emission is governed by a detailed balance between absorjDtion, and spontaneous and stimulated emission rates. Stimulated emission occurs when tire probability of a photon causing a transition of an electron from tire CB to VB witli tire emission of anotlier photon is greater tlian that for tire upward transition of an electron from tire VB to tire CB upon absorjDtion of tire photon. These rates are commonly described in tenns of Einstein s H and 5 coefficients [8, 43]. For semiconductors, tliere is a simple condition describing tire carrier density necessary for stimulated emission, or lasing. This carrier density is known as... 

Here, Ri f and Rf i are the rates (per moleeule) of transitions for the i ==> f and f ==> i transitions respeetively. As noted above, these rates are proportional to the intensity of the light souree (i.e., the photon intensity) at the resonant frequeney and to the square of a matrix element eonneeting the respeetive states. This matrix element square is oti fp in the former ease and otf ip in the latter. Beeause the perturbation operator whose matrix elements are ai f and af i is Hermitian (this is true through all orders of perturbation theory and for all terms in the long-wavelength expansion), these two quantities are eomplex eonjugates of one another, and, henee ai fp = af ip, from whieh it follows that Ri f = Rf i. This means that the state-to-state absorption and stimulated emission rate eoeffieients (i.e., the rate per moleeule undergoing the transition) are identieal. This result is referred to as the prineiple of microscopic reversibility. 

The uncertainty principle, according to which either the position of a confined microscopic particle or its momentum, but not both, can be precisely measured, requires an increase in the carrier energy. In quantum wells having abmpt barriers (square wells) the carrier energy increases in inverse proportion to its effective mass (the mass of a carrier in a semiconductor is not the same as that of the free carrier) and the square of the well width. The confined carriers are allowed only a few discrete energy levels (confined states), each described by a quantum number, as is illustrated in Eigure 5. Stimulated emission is allowed to occur only as transitions between the confined electron and hole states described by the same quantum number. 

In the above rather simplified analysis of the interaction of light and matter, it was assumed that the process involved was the absorption of light due to a transition m - n. However, the same result is obtained for the case of light emission stimulated by the electromagnetic radiation, which is the result of a transition m -> n. Then the Einstein coefficients for absorption and stimulated emission are identical, viz. fiOT< n = m rt. 

For the case in which the electronic transition is much faster than vibrational relaxation, one has to use the single-vibronic level rate constant and in analyzing the transient absorption or stimulated emission spectra, the single-vibronic level absorption or stimulated emission coefficient should be used. For... 

We consider a model for the pump-probe stimulated emission measurement in which a pumping laser pulse excites molecules in a ground vibronic manifold g to an excited vibronic manifold 11 and a probing pulse applied to the system after the excitation. The probing laser induces stimulated emission in which transitions from the manifold 11 to the ground-state manifold m take place. We assume that there is no overlap between the two optical processes and that they are separated by a time interval x. On the basis of the perturbative density operator method, we can derive an expression for the time-resolved profiles, which are associated with the imaginary part of the transient linear susceptibility, that is,... 

Einstein develops first relativistic cosmological model and introduces concepts of transition probabilities and stimulated emission. 

In a celebrated paper, Einstein (1917) analyzed the nature of atomic transitions in a radiation field and pointed out that, in order to satisfy the conditions of thermal equilibrium, one has to have not only a spontaneous transition probability per unit time A2i from an excited state 2 to a lower state 1 and an absorption probability BUJV from 1 to 2 , but also a stimulated emission probability B2iJv from state 2 to 1 . The latter can be more usefully thought of as negative absorption, which becomes dominant in masers and lasers.1 Relations between the coefficients are found by considering detailed balancing in thermal equilibrium... 

The band gap of the semiconductor HgTe is 0.06 eV. (a) What is the ratio of spontaneous to stimulated emission from this semiconductor at 300 K, for transitions from the valence band to the conduction band (b) If the band gap is constant, at what temperature does the rate of spontaneous emission equal the rate of stimulated emission ... 

Radiative and non-radiative transitions between electronic states 39 Box 3.2 Spontaneous and stimulated emissions... 

The key prerequisite for optical amplification via stimulated emission is that the emitted photons propagate through the gain medium long enough to initiate further stimulated transitions. This condition can be expressed as... 

Northrup, F. J., and Sears, T. J. (1992), Stimulated Emission Pumping Applications to Highly Vibrationally Excited Transition Molecules, Ann. Rev. Phys. Chem. 43, 127. 

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