Carrier densities

The carrier density in oligothiophenes can be estimated from independent measurements of the conductivity and field-effect mobility. With a conductivity between 10  

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There are many ways of increasing tlie equilibrium carrier population of a semiconductor. Most often tliis is done by generating electron-hole pairs as, for instance, in tlie process of absorjition of a photon witli h E. Under reasonable levels of illumination and doping, tlie generation of electron-hole pairs affects primarily the minority carrier density. However, tlie excess population of minority carriers is not stable it gradually disappears tlirough a variety of recombination processes in which an electron in tlie CB fills a hole in a VB. The excess energy E is released as a photon or phonons. The foniier case corresponds to a radiative recombination process, tlie latter to a non-radiative one. The radiative processes only rarely involve direct recombination across tlie gap. Usually, tliis type of process is assisted by shallow defects (impurities). Non-radiative recombination involves a defect-related deep level at which a carrier is trapped first, and a second transition is needed to complete tlie process. 

The light emitted in the spontaneous recombination process can leave tire semiconductor, be absorbed or cause additional transitions by stimulating electrons in tire CB to make a transition to tire VB. In tliis stimulated recombination process anotlier photon is emitted. The rate of stimulated emission is governed by a detailed balance between absorjDtion, and spontaneous and stimulated emission rates. Stimulated emission occurs when tire probability of a photon causing a transition of an electron from tire CB to VB witli tire emission of anotlier photon is greater tlian that for tire upward transition of an electron from tire VB to tire CB upon absorjDtion of tire photon. These rates are commonly described in tenns of Einstein s H and 5 coefficients [8, 43]. For semiconductors, tliere is a simple condition describing tire carrier density necessary for stimulated emission, or lasing. This carrier density is known as... 

A logical consequence of this trend is a quantum w ell laser in which tire active region is reduced furtlier, to less tlian 10 nm. The 2D carrier confinement in tire wells (fonned by tire CB and VB discontinuities) changes many basic semiconductor parameters, in particular tire density of states in tire CB and VB, which is greatly reduced in quantum well lasers. This makes it easier to achieve population inversion and results in a significant reduction in tire tlireshold carrier density. Indeed, quantum well lasers are characterized by tlireshold current densities lower tlian 100 A cm . ... 

This confinement yields a higher carrier density of elections and holes in the active layer and fast ladiative lecombination. Thus LEDs used in switching apphcations tend to possess thin DH active layers. The increased carrier density also may result in more efficient recombination because many nonradiative processes tend to saturate. The increased carrier confinement and injection efficiency faciUtated by heterojunctions yields increasing internal quantum efficiencies for SH and DH active layers. Similar to a SH, the DH also faciUtates the employment of a window layer to minimise absorption. In a stmcture grown on an absorbing substrate, the lower transparent window layer may be made thick (>100 /tm), and the absorbing substrate subsequendy removed to yield a transparent substrate device. 

For a weU-designed, weU-made HgCdTe photoconductoi detector (76,77), g-r noise is dominant and may be expressed in terms of a minority carrier densityp and majority carrier density n. Semiconductor noise analysis for the HgCdTe photoconductor yields,... 

The responsivity and g-r noise may be analyzed to obtain background photon flux and temperature dependence of responsivity, noise, and detectivity. Typically, n > p, and both ate determined by shallow impurity levels. The minority carrier density is the sum of thermal and optical contributions. 

CUO2 layers appear in all cuprate superconductors and appear to be a necessary but not sufficient condition for high temperature superconduction. The La2SrCu20g 2 compound has CUO2 layers but does not superconduct. Experiments also indicate that T is proportional to the carrier density in the CUO2 layer but not to the volume carrier density, which is further evidence that the YBa2Cu202 is a two-dimensional superconductor. 

Above 2 K, the temperature dependence of the zero-field resistivity of the microbundle measured by Langer et al. [9] was found to be governed by the temperature dependence of the carrier densities and well described by the simple two-band (STB) model derived by Klein [23] for electrons, , and hole, p, densities in semimetallic graphite ... 

Figure 13-14. Spatial profiles of the carrier densities and the recombination for devices of width 100 nrn (dotted lilies) and 10 pm (solid lilies), for equal electron and hole mobilities. Reproduced with permission from I05J. Copyright I99K by the American Physical Society.

The excellent agreement between the TSC and P1A results has two implications. First, since the TSC method probes the product of mobility and carrier density, while the P1A probes only the carrier density, there seems to be no dominant influence of temperature on the carrier mobility. This was also found in other conjugated polymers like /ra/ry-polyacetylene [19, 36]. Second, photoconductivity (observed via the thermal release of photoexcited and trapped earners) and photo-induced absorption probe the same charged entity [36, 37J. 

Solid solutions are very common among structurally related compounds. Just as metallic elements of similar structure and atomic properties form alloys, certain chemical compounds can be combined to produce derivative solid solutions, which may permit realization of properties not found in either of the precursors. The combinations of binary compounds with common anion or common cation element, such as the isovalent alloys of IV-VI, III-V, II-VI, or I-VII members, are of considerable scientific and technological interest as their solid-state properties (e.g., electric and optical such as type of conductivity, current carrier density, band gap) modulate regularly over a wide range through variations in composition. A general descriptive scheme for such alloys is as follows [41]. 

The energy position Cp of peak p in the lED of an ion with mass m is seen to be dependent on the plasma potential Vpi, the RE period T, and the ion plasma frequency cd, = yje n j m(o). Equation (48) can be used to determine the (net) charge carrier density in the sheath and the time-averaged potential Vpi from measured lEDs. The mean position Xp follows from combining Eq. (47) and Eq. (48) ... 

In silane discharges several ions are observed to be involved in a charge exchange process, and therefore maxima in their ion energy distribution at distinct energies are observed. The charge carrier density and the plasma potential that result from the fit of the lED allow for the quantification of the related parameters sheath thickness and ion flux. This method has been be used to relate the material quality of a-Si H to the ion bombardment [301. 332] see also Section 1.6.2.3. 

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